1
Phan Khoi A, Rangarajan Bharath, Singh Bhanwar, Subramanian Ramkumar: Refractive index system monitor and control for immersion lithography. Advanced Micro Devices, Phan Khoi A, Rangarajan Bharath, Singh Bhanwar, Subramanian Ramkumar, COLLOPY Daniel R, March 3, 2005: WO/2005/019935 (355 worldwide citation)

A system and/or method are disclosed for measuring (250) and/or controlling (260) refractive index (n) and/or lithographic constant (k) of an immersion medium (210) utilized in connection with immersion lithography. A known grating structure (602) is built upon a substrate (220). A refractive index ...


2
Subramanian Ramkumar, Singh Bhanwar, Phan Khoi A: Use of supercritical fluid to dry wafer and clean lens in immersion lithography. Advanced Micro Devices, Spansion, Subramanian Ramkumar, Singh Bhanwar, Phan Khoi A, DRAKE Paul S, January 11, 2007: WO/2007/005362 (12 worldwide citation)

Disclosed are immersion lithography methods and systems involving irradiating a photoresist through a lens and an immersion liquid of an immersion lithography tool, the immersion liquid in an immersion space contacting the lens and the photoresist; removing the immersion liquid from the immersion sp ...


3
Casadevall Gemma, Subramanian Ramkumar, Barclay Brian, Allphin Clark, Shivanand Padmaja, Yam Noymi V: Sustained drug release composition demonstrating an ascending zero order release pattern, methods of manufacturing such a composition. Alza Corporation, Casadevall Gemma, Subramanian Ramkumar, Barclay Brian, Allphin Clark, Shivanand Padmaja, Yam Noymi V, ABRAHAM David, February 16, 2006: WO/2006/017537 (6 worldwide citation)

Disclosed are dosage forms and methods for sustained release of a drug including : a delay layer comprising a polymeric matrix, and microencapsulated drug, wherein the delay layer is substantially free of non-microencapsulated drug; and a second layer including a polymeric matrix, and non-microencap ...


4
Reyes Iran, Lee Julie, Barclay Brian L, Davar Nipun, Subramanian Ramkumar: Osmotic dosage form with controlled release and fast release aspects. Alza Corporation, Reyes Iran, Lee Julie, Barclay Brian L, Davar Nipun, Subramanian Ramkumar, NWANERI Angela, April 19, 2007: WO/2007/044234 (1 worldwide citation)

Disclosed are osmotic dosage forms including a semi-permeable membrane; a first and a second orifice in the semi-permeable membrane located at opposite ends of the semi-permeable membrane; a controlled release drug layer located adjacent to the first orifice and within the semi-permeable membrane; a ...


5
Oglesby Jane V, Lyons Christopher F, Subramanian Ramkumar, Hui Angela T, Ngo Minh Van, Pangrle Suzette: Spin on polymers for organic memory devices. Advanced Micro Devices, Oglesby Jane V, Lyons Christopher F, Subramanian Ramkumar, Hui Angela T, Ngo Minh Van, Pangrle Suzette, sCOLLOPY Daniel R, February 17, 2005: WO/2005/015635

A method of making organic memory cells (104) made of two electrodes (106, 108) with a controllably conductive media (110) between the two electrodes (106, 108) is disclosed. The controllably conductive media (110) contains an organic semiconductor layer (112) and passive layer (114). The organic se ...


6
Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V, sCOLLOPY Daniel R, February 3, 2005: WO/2005/010892

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


7
Lyons Christopher F, Chang Mark S, Lopatin Sergey D, Subramanian Ramkumar, Cheung Patrick, Ngo Minh Van, Oglesby Jane V: Sidewall formation for high density polymer memory element array. Advanced Micro Devices, Lyons Christopher F, Chang Mark S, Lopatin Sergey D, Subramanian Ramkumar, Cheung Patrick, Ngo Minh Van, Oglesby Jane V, sDRAKE Paul S, May 19, 2005: WO/2005/045935

Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing various depositing and etching processes. The side wall memory cell ...


8
Gabriel Calvin T, Lyons Christopher F, Plat Marina V, Subramanian Ramkumar: Contact etch resistant spacers. Advanced Micro Devcies, Gabriel Calvin T, Lyons Christopher F, Plat Marina V, Subramanian Ramkumar, sDRAKE Paul S, July 7, 2005: WO/2005/062372

An apparatus and a method of fabricating a semiconductor device (10) including the steps of forming a gate dielectric layer (20) on a semiconductor substrate (12); forming a gate electrode (18) over the gate dielectric layer (20) wherein the gate electrode (20) defines a channel (22) interposed betw ...



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