1
Arunkumar Subramanian, Xiangyu Tang, Jason Bellorado, Lingqi Zeng, Frederick K H Lee: Storage of read thresholds for NAND flash storage using linear approximation. SK hynix memory solutions, Van Pelt Yi & James, December 30, 2014: US08923066 (48 worldwide citation)

A first read threshold associated with a first page in a block and a second read threshold associated with a second page in the block are received, where the first page has a first page number and the second page has a second page number. A slope and a y intercept are determined based at least in pa ...


2
Jae Ung Lee: Semiconductor memory apparatus and test circuit therefor. SK Hynix, William Park & Associates Patent, October 28, 2014: US08873272 (26 worldwide citation)

Disclosed is a semiconductor memory apparatus, including: a memory cell array configured to include a plurality of memory cells; a switching unit configured to be coupled to data input and output pads and control a data transfer path of data applied to the data input and output pads in response to a ...


3
Yingquan Wu, Marcus Marrow: Error recovery for flash memory. SK hynix memory solutions, Van Pelt Yi & James, August 6, 2013: US08503238 (24 worldwide citation)

A system for error recovery for flash memory comprises a receiver and an interface. The receiver is configured to receive a portion of data. The receiver is further configured to identify a logical type of the portion of data. The receiver is further configured to adjust a threshold for error recove ...


4
Myoung Sub Kim, Soo Gil Kim, Nam Kyun Park, Sung Cheoul Kim, Gap Sok Do, Joon Seop Sim, Hyun Jeong Lee: Semiconductor integrated circuit device, method of manufacturing the same, and method of driving the same. SK Hynix, IP & T Group, January 13, 2015: US08934294 (17 worldwide citation)

A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from ...


5
Myoung Sub Kim, Soo Gil Kim, Nam Kyun Park, Sung Cheoul Kim, Gap Sok Do, Joon Seop Sim, Hyun Jeong Lee: Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same. SK Hynix, IP & T Group, April 8, 2014: US08693241 (17 worldwide citation)

A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from ...


6
Ho Jin Cho, Cheol Hwan Park, Dong Kyun Lee: Method for forming pillar type capacitor of semiconductor device. SK Hynix, William Park & Associates Patent, June 25, 2013: US08470668 (16 worldwide citation)

An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar, and a dielectric film is formed over pillar and the bottom electrode. A top electrode is then formed ov ...


7
Han Soo Joo: Nonvolatile memory device and method for fabricating the same. SK Hynix, IP & T Group, August 13, 2013: US08507976 (14 worldwide citation)

A nonvolatile memory device includes a gate structure in which a plurality of interlayer dielectric layers and a plurality of gate electrodes are alternately stacked; a pass gate electrode lying under the gate structure; a sub channel hole defined in the pass gate electrode; a pair of main channel h ...


8
Sung Yeon Lee, Hyun Joo Lee: Memory apparatus having storage medium dependent on temperature and method for driving the same. SK Hynix, William Park & Associates, December 11, 2012: US08331183 (11 worldwide citation)

A memory apparatus includes a temperature detection block configured to detect temperature of an internal circuit and output a temperature detection signal, a current control block configured to receive the temperature detection signal and generate a pulse control signal, and a write driver configur ...


9
Hae Chan Park, Se Ho Lee: Phase change memory device having multi-level and method of driving the same. SK Hynix, Ladas & Parry, January 8, 2013: US08351240 (10 worldwide citation)

A phase change memory device having a multi-level and a method of driving the same are presented. The disclosed phase change memory device includes variable resistors and shifting units. The variable resistors are interchanged into set and reset states in response to an applied current. The shifting ...


10
Jung Ryul Ahn, Sang Hyun Oh, Jum Soo Kim: Semiconductor memory device and method of operating the same. SK Hynix, William Park & Associates Patent, August 27, 2013: US08520440 (9 worldwide citation)

A method of operating a semiconductor memory device includes a memory array having memory cell strings including a first and a second memory cell groups having memory cells, a first and a second dummy elements, a drain select transistor and a source select transistor, wherein the first memory cell g ...



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