1
Masashi Kawasaki, Hideo Ohno, Kazuki Kobayashi, Ikuo Sakono: Thin film transistor and matrix display device. Sharp Kabushiki Kaisha, Masashi Kawasaki, Hideo Ohno, David G Conlin, John B Alexander, Edwards & Angell, May 13, 2003: US06563174 (2154 worldwide citation)

In a thin film transistor, a gate insulating film having a first insulating film and a second insulating film is formed on a gate electrode, and a semiconductor layer including ZnO etc. is formed on the second insulating film. The first insulating film is formed by using SiN


2
Sugihara Toshinori, Ohno Hideo, Kawasaki Masashi: (Ja) 半導体装置およびその製造方法ならびに電子デバイス, (En) Semiconductor device, its manufacturing method, and electronic device. Sharp Kabushiki Kaisha, Sugihara Toshinori, Ohno Hideo, Kawasaki Masashi, HARA Kenzo, December 29, 2004: WO/2004/114391 (2076 worldwide citation)

(EN) A thin film transistor (1) wherein a gate electrode (3) is formed on an insulative substrate (2), a gate insulating layer (4) is formed on the gate electrode (3), a semiconductor layer (5) is formed on the gate insulating layer (4), a source electrode (6) and a drain electrode (7) are formed on ...


3
Hirotsugu Matoba, Susumu Hirata, Yorishige Ishii, Tetsuya Inui, Kenji Ohta, Shingo Abe, Zenjiro Yamashita: Ink jet head and a method of manufacturing thereof. Sharp Kabushiki Kaisha, Nixon & Vanderhye P C, September 9, 1997: US05666141 (388 worldwide citation)

A casing and a nozzle plate form a hollow cavity in which ink liquid can be filled. A buckling structure body is disposed within this hollow cavity. A nozzle orifice is provided in a nozzle plate at a position corresponding to the buckling structure body. The buckling structure body has a portion ex ...


4
Masayuki Katagiri, Masanori Watanabe, Kazutaka Uda, Masaya Hijikigawa, Shuhei Tsuchimoto, Yasuhiko Inami: Variable interferometric device and a process for the production of the same. 501 Sharp Kabushiki Kaisha, Irell & Manella, August 22, 1989: US04859060 (372 worldwide citation)

A variable interferometric device comprising a Fabry-Perot interferometer composed of a pair of reflecting substances facing each other with a space therebetween formed by spacers and a means for deforming at least one of the reflecting substances constituting said Fabry-Perot interferometer to ther ...


5
Katsuhiko Hashimoto, Nobutaka Takahashi: Electronic apparatus. Sharp Kabushiki Kaisha, Nixon & Vanderhye, July 19, 1994: US05331555 (355 worldwide citation)

An object of the invention is to improve the operability and ease of use of electronic apparatus generally known as electronic notebooks used for storing and displaying textual data and other data entered thereto. The electronic apparatus facilitates effective creation of text having a hierarchical ...


6
Tetsuya Inui, Hirotsugu Matoba, Susumu Hirata, Yorishige Ishii, Shingo Abe, Masaharu Kimura, Hajime Horinaka, Hiroshi Onda: Diaphragm type ink jet head having a high degree of integration and a high ink discharge efficiency. Sharp Kabushiki Kaisha, Nixon & Vanderhye P C, February 17, 1998: US05719604 (354 worldwide citation)

A pressure generating member applies a pressure to an ink, the member having a symmetric configuration and including a buckling body. The buckling body may include a radially extending ribbed portion on its upper surface and no buckling layer beneath it. A heater layer is interposed between insulati ...


7
Masumi Kubo, Yozo Narutaki, Atsushi Ban, Takayuki Shimada, Yoji Yoshimura, Mikio Katayama, Yutaka Ishii, Hirohiko Nishiki: Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region. Sharp Kabushiki Kaisha, Nixon & Vanderhye P C, February 27, 2001: US06195140 (284 worldwide citation)

A liquid crystal display device according to the present invention includes a first substrate, a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. The first substrate includes: a plurality of gate lines; a plurality of source lines arranged ...


8
Akiteru Rai, Keiji Yamamura, Takashi Nukii: Method of making a hybrid semiconductor device. Sharp Kabushiki Kaisha, Birch Stewart Kolasch & Birch, April 4, 1989: US04818728 (277 worldwide citation)

A method for making a semiconductor device of a type comprising at least first and second semiconductor circuit units, which method comprises the step of forming a plurality of connecting electrodes on an upper surface of each of at least first and second semiconductor substrates; forming an electri ...


9
Tadatomo Suga: Interconnect structure for stacked semiconductor device. Oki Electric, Sanyo Electric, Sony Corporation, Kabushiki Kaisha Toshiba, NEC Corporation, Sharp Kabushiki Kaisha, Hitachi, Fujitsu, Matsushita Electronics Corporation, Mitsubishi Denki Kabushiki Kaisha, Rohm, Sonnenschein Nath & Rosenthal, October 15, 2002: US06465892 (265 worldwide citation)

In a multi-layer interconnection structure, the wiring length is to be reduced, and the interconnection is to be straightened, at the same time as measures need to be taken against radiation noise. To this end, there is disclosed a semiconductor device in which plural semiconductor substrates, each ...


10
Tadatomo Suga: Method for manufacturing an interconnect structure for stacked semiconductor device. Oki Electric, Sanyo Electric, Sony Corporation, Kabushiki Kaisha Toshiba, NEC Corporation, Sharp Kabushiki Kaisha, Hitachi, Fujitsu, Matsushita Electronics Corporation, Mitsubishi Denki Kabushiki Kaisha, Rohm, Sonnenschein Nath & Rosenthal, October 29, 2002: US06472293 (249 worldwide citation)

In a multi-layer interconnection structure, the wiring length is to be reduced, and the interconnection is to be straightened, at the same time as measures need to be taken against radiation noise. To this end, there is disclosed a semiconductor device in which plural semiconductor substrates, each ...



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