Pierangelo Magni: Plastic package for electronic devices. SGS Thomson Microelectronics S r l, James H Morris, Theodore E Galanthay, Wolf Greenfield & Sacks P C, August 28, 2001: US06281566 (163 worldwide citation)

A semiconductor electronic device comprises a chip of a semiconductor material, a set of metal conductors adjacent to the plate, a set of wire leads joining selected points on the chip to the metal conductors, and a supporting metal plate formed of three portions having a total surface area which is ...

Germano Nicollini: Linearly regulated voltage multiplier. SGS Thomson Microelectronics S r l, David V Carlson, Robert E Seed and Berry Mates, May 19, 1998: US05754417 (111 worldwide citation)

A regulating circuit for the output voltage of a voltage booster, of the type which comprises a first charge transfer capacitor adapted to draw electric charges from the supply terminal and transfer them to the output terminal, through electronic switches controlled by non-overlapped complementary p ...

Cristiano Calligaro, Vincenzo Daniele, Roberto Gastaldi, Alessandro Manstretta, Nicola Telecco, Guido Torelli: Parallel-dichotomic serial sensing method for sensing multiple-level non-volatile memory cells, and sensing circuit for actuating such method. SGS Thomson Microelectronics S r l, David V Carlson, Bryan A Seed and Berry Santarelli, March 17, 1998: US05729490 (103 worldwide citation)

A method for sensing multiple-levels non-volatile memory cells which can take one programming level among a plurality of m=2.sup.n (n>=Z) different programming levels, provides for biasing a memory cell to be sensed in a predetermined condition, so that the memory cell sinks a cell current with a va ...

Germano Nicollini, Daniel Senderowicz: Method of reconstructing an analog signal, particularly in digital telephony applications, and a circuit device implementing the method. SGS Thomson Microelectronics S r L, Rosen Dainow & Jacobs, May 7, 1991: US05014304 (88 worldwide citation)

A method of reconstructing an analog signal, particularly for digital telephony, comprises a first step of digital-to-analog conversion, wherein a first reconstruction of the analog signal is provided by introducing a distortion component into the frequency spectrum whose amplitude decreases with th ...

Carlo Bergonzoni: Process for manufacturing CMOS integrated devices with reduced gate lengths. SGS Thomson Microelectronics S r l, Guido Modiano, Albert Josif, November 6, 1990: US04968639 (84 worldwide citation)

A process for manufacturing CMOS integrated devices with gate lengths of less than one micron and high supply voltage is described. In order to improve the resistance of CMOS devices to breakdown and punch-through phenomena without cost increases with respect to conventional CMOS processes and limit ...

Livio Baldi: Memory device having error detection and correction function, and methods for reading, writing and erasing the memory device. SGS Thomson Microelectronics S r l, Robert Groover, Betty Formby, Matthew Anderson, June 2, 1998: US05761222 (81 worldwide citation)

The present invention relates to a memory device and specifically the multilevel type with error check and correction function and having a data input (DI), a data output (DO) and an address input (A1) and being of the type comprising first memory, circuit (DM) designed to be accessed by means of ad ...

Giuseppe Marchisi: Semiconductor device package with dies mounted on both sides of the central pad of a metal frame. SGS Thomson Microelectronics s r l, Bierman and Muserlian, July 23, 1991: US05034350 (80 worldwide citation)

A semiconductor device in a plastic or ceramic package contains at least one silicon die on each side of a central die pad of a single metal frame, thus allowing a substantial space saving on the printed circuit assembly card.

Lorenzo Fratin, Carlo Riva: High-voltage-resistant MOS transistor, and corresponding manufacturing process. SGS Thomson Microelectronics S r l, Allen Dyer Doppelt Milbrath & Gilchrist P A, November 2, 1999: US05977591 (73 worldwide citation)

A MOS transistor capable of withstanding relatively high voltages is of a type integrated on a region included in a substrate of semiconductor material, having conductivity of a first type and comprising a channel region intermediate between a first active region of source and a second active region ...

Giovanni Campardo, Rino Micheloni, Marco Maccarrone: Circuit and method for generating a read reference signal for nonvolatile memory cells. SGS Thomson Microelectronics S r l, David V Carlson, Bryan A Seed and Berry Santarelli, September 8, 1998: US05805500 (65 worldwide citation)

The current flowing through a cell to be read, forming part of a nonvolatile memory array and presenting a characteristic with a predetermined slope, is amplified N times and compared with a reference current presenting a two portion characteristic: a first portion extending between a predetermined ...

Mirella Benedetti, Antonio Chiriatti, Vincenzo Daniele, Biagio Giacalone: Programmable logic device having a plurality of programmable logic arrays arranged in a mosaic layout together with a plurality of interminglingly arranged interfacing blocks. SGS Thomson Microelectronics s r l, Pollock Vande Sande & Priddy, February 12, 1991: US04992680 (58 worldwide citation)

A programmable logic device has an architecture which permits to implement logic functions through loopable multi-levels by utilizing a network of distributed memory arrays organized as a mosaic of arrays of programmable memory cells and multifunctional interfacing blocks. Each of said blocks contai ...