1
Kengo Akimoto, Tatsuya Honda, Norihito Sone: Semiconductor device and manufacturing method thereof. Semiconductor Energy Laboratory, Cook Alex, March 9, 2010: US07674650 (2085 worldwide citation)

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate ...


2
Kengo Akimoto, Tatsuya Honda, Norihito Sone: Semiconductor device and manufacturing method thereof. Semiconductor Energy Laboratory, Husch Blackwell Sanders, June 8, 2010: US07732819 (2004 worldwide citation)

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate ...


3
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, July 1, 1997: US05643826 (1034 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


4
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, July 13, 1999: US05923962 (760 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


5
Shunpei Yamazaki, Yasuyuki Arai, Satoshi Teramoto: Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding. Semiconductor Energy Laboratory, Fish & Richardson P C, October 13, 1998: US05821138 (482 worldwide citation)

A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the cr ...


6
Hongyong Zhang, Hideki Uochi, Toru Takayama, Takeshi Fukunaga, Yasuhiko Takemura: Method for manufacturing semiconductor device. Semiconductor Energy Laboratory, Sixbey Friedman Leedom & Ferguson, April 4, 1995: US05403772 (390 worldwide citation)

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum ...


7
Shunpei Yamazaki, Hisashi Ohtani, Jun Koyama, Takeshi Fukunaga: Semiconductor device having an SOI structure and manufacturing method therefor. Semiconductor Energy Laboratory, Fish & Richardson P C, October 3, 2000: US06127702 (385 worldwide citation)

A fine semiconductor device having a short channel length while suppressing a short channel effect. Linearly patterned or dot-patterned impurity regions 104 are formed in a channel forming region 103 so as to be generally parallel with the channel direction. The impurity regions 104 are effective in ...


8
Shunpei Yamazaki, Hisashi Ohtani, Toshiji Hamatani: Semiconductor device and manufacturing method therefor. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, August 14, 2001: US06274887 (370 worldwide citation)

An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel ...


9
Hongyong Zhang, Hideto Ohnuma, Yasuhiko Takemura: Process for fabricating thin film transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson, June 25, 1996: US05529937 (338 worldwide citation)

After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystal ...


10
Shunpei Yamazaki, Yasuhiko Takemura, Setsuo Nakajima, Yasuyuki Arai: Display device and method of fabricating involving peeling circuits from one substrate and mounting on other. Semiconductor Energy Laboratory, Fish & Richardson P C, May 26, 1998: US05757456 (332 worldwide citation)

A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of t ...



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