1
Kengo Akimoto, Tatsuya Honda, Norihito Sone: Semiconductor device and manufacturing method thereof. Semiconductor Energy Laboratory, Cook Alex, March 9, 2010: US07674650 (2496 worldwide citation)

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate ...


2
Kengo Akimoto, Tatsuya Honda, Norihito Sone: Semiconductor device and manufacturing method thereof. Semiconductor Energy Laboratory, Husch Blackwell Sanders, June 8, 2010: US07732819 (2404 worldwide citation)

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate ...


3
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, July 1, 1997: US05643826 (1049 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


4
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, July 13, 1999: US05923962 (773 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


5
Shunpei Yamazaki, Yasuyuki Arai, Satoshi Teramoto: Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding. Semiconductor Energy Laboratory, Fish & Richardson P C, October 13, 1998: US05821138 (493 worldwide citation)

A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the cr ...


6
Shunpei Yamazaki, Hisashi Ohtani, Jun Koyama, Takeshi Fukunaga: Semiconductor device having an SOI structure and manufacturing method therefor. Semiconductor Energy Laboratory, Fish & Richardson P C, October 3, 2000: US06127702 (414 worldwide citation)

A fine semiconductor device having a short channel length while suppressing a short channel effect. Linearly patterned or dot-patterned impurity regions 104 are formed in a channel forming region 103 so as to be generally parallel with the channel direction. The impurity regions 104 are effective in ...


7
Hongyong Zhang, Hideki Uochi, Toru Takayama, Takeshi Fukunaga, Yasuhiko Takemura: Method for manufacturing semiconductor device. Semiconductor Energy Laboratory, Sixbey Friedman Leedom & Ferguson, April 4, 1995: US05403772 (391 worldwide citation)

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum ...


8
Shunpei Yamazaki, Hisashi Ohtani, Toshiji Hamatani: Semiconductor device and manufacturing method therefor. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, August 14, 2001: US06274887 (389 worldwide citation)

An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel ...


9
Kengo Akimoto, Tatsuya Honda, Norihito Sone: Semiconductor device and manufacturing method thereof. Semiconductor Energy Laboratory, Husch Blackwell, April 26, 2011: US07932521 (352 worldwide citation)

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate ...


10
Kengo Akimoto, Tatsuya Honda, Norihito Sone: Semiconductor device and manufacturing method thereof. Semiconductor Energy Laboratory, Husch Blackwell, March 22, 2011: US07910490 (351 worldwide citation)

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate ...



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