1
Shunpei Yamazaki, Jun Koyama, Keisuke Hayashi: Nonvolatile memory and manufacturing method thereof. Semiconductor Energy Laboratories, Jeffrey L Costellia, Nixon Peabody, October 29, 2002: US06472684 (108 worldwide citation)

Memory elements, switching elements, and peripheral circuits to constitute a nonvolatile memory are integrally formed on a substrate by using TFTs. Since semiconductor active layers of memory element TFTs are thinner than those of other TFTs, impact ionization easily occurs in channel regions of the ...


2
Shunpei Yamazaki, Satoshi Murakami, Masayuki Sakakura, Toru Takayama: Light-emitting device. Semiconductor Energy Laboratories, Nixon Peabody, Jeffrey L Costellia, October 31, 2006: US07129523 (50 worldwide citation)

The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic c ...


3
Setsuo Nakajima, Shunpei Yamazaki, Naoto Kusumoto, Satoshi Teramoto: Method for producing semiconductor device. Semiconductor Energy Laboratories, Eric J Robinson, Nixon Peabody, June 5, 2001: US06242289 (29 worldwide citation)

In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat tr ...


4
Yasuhiko Takemura: Semiconductor device and method for manufacturing the same. Semiconductor Energy Laboratories, Gerald J Ferguson Jr, Jeffrey L Costellia, Nixon Peabody, February 27, 2001: US06194254 (24 worldwide citation)

A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the crystallization direction is roughly ...


5
Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma: Electro-optical device and electronic device. Semiconductor Energy Laboratories, Nixon Peabody, Jeffrey L Costellia, June 22, 2010: US07741775 (17 worldwide citation)

An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current ...


6
Masakazu Egawa, Sachiko Kawakami, Harue Nakashima, Nobuharu Ohsawa, Satoshi Seo, Ryoji Nomura: Quinoxaline derivative, and light-emitting element, light-emitting device, electronic device using the quinoxaline derivative. Semiconductor Energy Laboratories, Nixon Peabody, Jeffrey L Costellia, April 13, 2010: US07696348 (4 worldwide citation)

It is an object to provide a novel bipolar organic compound. In particular, it is an object to provide a bipolar organic compound excellent in thermal stability. Further, it is another object to provide a bipolar organic compound which is electrochemically stable. A quinoxaline derivative represente ...


7
Jun Koyama, Takeshi Osada: PLL circuit and semiconductor device having the same. Semiconductor Energy Laboratories, Eric J Robinson, Robinson Intellectual Property Law Office P C, September 21, 2010: US07800455 (3 worldwide citation)

A PLL circuit includes a phase detector, a loop filter (LF), a voltage-controlled oscillator (VCO), and a frequency divider. The phase detector compares a phase of a signal Fs which is input from outside with a phase of a signal Fo/N which is input from the frequency divider. The loop filter generat ...


8
Mitsuaki Osame, Aya Anzai: Shift register and semiconductor display device. Semiconductor Energy Laboratories, Eric J Robinson, Robinson Intellectual Property Law Office P C, November 30, 2010: US07843217 (2 worldwide citation)

The invention provides a shift register which can operate normally while suppressing a delay of signal and a rounding of waveform. The shift register of the invention includes a plurality of stages of flip-flop circuits each of which includes a clocked inverter. The clocked inverter includes a first ...


9
Koichiro Tanaka: Deposition donor substrate and deposition method using the same. Semiconductor Energy Laboratories, Fish & Richardson P C, March 26, 2013: US08405909 (2 worldwide citation)

A lens array is formed on one surface of a deposition donor substrate and a light absorption layer is formed on the other surface; a material layer is formed in contact with the light absorption layer; the surface of the deposition donor substrate on which the material layer is formed and a depositi ...


10
Mitsuhiro Ichijo, Toshiya Endo, Kunihiko Suzuki: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratories, Robinson Intellectual Property Law Office, Eric J Robinson, June 20, 2017: US09685561 (1 worldwide citation)

An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide ...