1
Akimoto Kengo, Honda Tatsuya, Sone Hiroto: Semiconductor device and its manufacturing method. Semiconductor Energy Lab, May 17, 2007: JP2007-123861 (1163 worldwide citation)

PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress a cost increase without complicating a manufacturing process when forming a thin-film transistor using an oxide semiconductor film represented by a zinc oxide, and to provide its manufacturing method.SOLUTION: In the semicond ...


2
Arai Yasuyuki, Honda Tatsuya, Akimoto Kengo, Kawamata Ikuko: Semiconductor device and method for manufacturing the same. Semiconductor Energy Lab, April 12, 2007: JP2007-096055 (1108 worldwide citation)

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a thin film transistor using a compound semiconductor having better electrical performance, and a method for manufacturing it.SOLUTION: The semiconductor device uses a compound semiconductor material as a semiconductor layer, forms a ...


3
Akimoto Kengo, Honda Tatsuya, Sone Norihito: Semiconductor device having oxide semiconductor layer and manufacturing method thereof. Semiconductor Energy Lab, April 4, 2007: EP1770788-A2 (386 worldwide citation)

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate ...


4
Akimoto Kengo, Honda Tatsuya, Sone Norihito: Semiconductor device having oxide semiconductor layer and manufacturing method therof. Semiconductor Energy Lab, November 26, 2008: EP1995787-A2 (302 worldwide citation)

The invention provides an active matrix EL display device comprising a thin film transistor formed over a substrate, the thin film transistor including a gate electrode over the substrate; an insulating film over the gate electrode; and an oxide semiconductor film over the gate electrode with the in ...


5
Akimoto Kengo, Honda Tatsuya, Sone Norihito: Semiconductor device having oxide semiconductor layer and manufacturing method thereof. Semiconductor Energy Lab, December 3, 2008: EP1998374-A2 (302 worldwide citation)

The invention provides an active matrix liquid crystal display device comprising a gate electrode over a substrate; an insulating film over the gate electrode; an oxide semiconductor film over the gate electrode with the insulating film interposed there between; a channel protective film formed over ...


6
Akimoto Kengo, Honda Tatsuya, Sone Norihito: Semiconductor device having oxide semiconductor layer and manufacturing method. Semiconductor Energy Lab, December 3, 2008: EP1998375-A2 (299 worldwide citation)

The invention provides a semiconductor device comprising a gate electrode over a substrate; an insulating film over the gate electrode; an oxide semiconductor film over the gate electrode with the insulating film interposed there between; a channel protective film formed over the oxide semiconductor ...


7
Akimoto Kengo, Honda Tatsuya, Sone Norihito: Semiconductor device having oxide semiconductor layer and manufacturing method thereof. Semiconductor Energy Lab, December 3, 2008: EP1998373-A2 (296 worldwide citation)

The invention provides an active matrix display device comprising a pixel portion including a thin film transistor having a multi-gate structure, the thin film transistor including a first gate electrode and a second gate electrode over a substrate wherein the first gate electrode and the second gat ...


8
Takayama Toru, Maruyama Junya, Mizukami Mayumi, Yamazaki Shunpei: Peeling method, semiconductor device, and manufacturing method therefor. Semiconductor Energy Lab, June 20, 2003: JP2003-174153 (204 worldwide citation)

PROBLEM TO BE SOLVED: To peel not only a peeled layer with small area, but also a peeled layer with large area over the entire surface in good yield by providing a peeling method which gives no damage to the peeled layers, to provide a semiconductor device which is made lightweight by sticking the p ...


9
Koyama Jun: El display device and electronic device. Semiconductor Energy Lab, January 12, 2001: JP2001-005426 (192 worldwide citation)

PROBLEM TO BE SOLVED: To provide a clear multilevel color displayable EL display device and an electronic device with it.SOLUTION: A current supplied to an EL element 110 is controlled by providing a resistor 109 of a resistance value higher than on-resistance of a current controlling TFT 108 betwee ...


10
Inukai Kazutaka: Gradation control for an active matrix el display. Semiconductor Energy Lab, May 30, 2001: EP1103946-A2 (169 worldwide citation)

To provide an active matrix electronic device capable of performing clear color gray-scale display. The electronic device is characterized in that a plurality of pixels composing a pixel portion is surrounded by a source signal line, a first gate signal line. a second gate signal line, and a power s ...