1
David Sherrer
David W Sherrer, Noel A Heiks: Optoelectronic component with flip-chip mounted optoelectronic device. Samsung Electronics, Sughrue Mion PLLC, November 1, 2011: US08049161 (166 worldwide citation)

Provided are optoelectronic components which include an optoelectronic device and a structure for self-aligning the optoelectronic device. Also provided are optoelectronic modules and methods of forming optoelectronic components.


2
David Sherrer
James W Getz, David W Sherrer, John J Fisher: Electronic device packages and methods of formation. Samsung Electronics, Sughrue Mion PLLC, June 19, 2012: US08203207 (38 worldwide citation)

Provided are electronic device packages and their methods of formation. The electronic device packages include an electronic device mounted on a substrate, a conductive via and a locally thinned region in the substrate. The invention finds application, for example, in the electronics industry for he ...


3
David Sherrer
David W Sherrer, Noel A Heiks: Optoelectronic component including optoelectronic device flip-chip mounted to substrate and conductor extending through the substrate. Samsung Electronics, Sughrue Mion PLLC, November 13, 2012: US08309908 (2 worldwide citation)

Provided are optoelectronic components which include an optoelectronic device and a structure for self-aligning the optoelectronic device. Also provided are optoelectronic modules and methods of forming optoelectronic components.


4
Belgacem Haba Belgacem (Bel) Haba
Joseph C Fjelstad, Para K Segaram, Belgacem Haba: Direct-connect signaling system. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, August 2, 2011: US07989929 (1 worldwide citation)

A direct-connect signaling system including a printed circuit board and first and second integrated circuit packages disposed on the printed circuit board. A plurality of electric signal conductors extend between the first and second integrated circuit packages suspended above the printed circuit bo ...


5
David Sherrer
David W Sherrer, Mindaugas F Dautartas, Neil Ricks, Dan A Steinberg: Optical device package. Samsung Electronics, Sughrue Mion PLLC, March 19, 2013: US08399897 (1 worldwide citation)

An optical device package includes a substrate having an upper surface, a distal end, a proximal end, and distal and proximal longitudinally extending notches co-linearly aligned with each other. A structure is mounted to the substrate and has at least one recessed portion. The structure can be a li ...


6
Garo Khanarian
Garo Khanarian, Margaret M Pafford, David Sherrer: Micro-optical device and method of making same. Samsung Electronics, Sughrue Mion PLLC, November 1, 2011: US08050526

A method for making a micro optical device includes providing an optical element, providing a glass perform, providing a substrate with a precision formed feature designed to passively position the optical element relative to the substrate, and bonding the optical element to the substrate using the ...


7
EUNKEE HONG
Juseon Goo, Eunkee Hong, Hong Gun Kim, Kyu Tae Na: Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device. Samsung Electronics, Myers Bigel Sibley & Sajovec, September 8, 2009: US07585786 (6 worldwide citation)

Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated ...


8
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec, March 21, 2006: US07015144 (5 worldwide citation)

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


9
EUNKEE HONG
Yong Won Cha, Kyu Tae Na, Yong Soon Choi, Eunkee Hong, Ju Seon Goo: Methods of forming trench isolation layers using high density plasma chemical vapor deposition. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, February 19, 2008: US07332409 (5 worldwide citation)

A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.


10
EUNKEE HONG
Jong Wan Choi, Hong Gun Kim, Kyu Tae Na, Eunkee Hong: Method of forming a trench isolation layer and method of manufacturing a non-volatile memory device using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, October 13, 2009: US07601588 (4 worldwide citation)

In a method of forming a device isolation layer for minimizing a parasitic capacitor and a non-volatile memory device using the same, a trench is formed on a substrate. A first insulation layer is formed on a top surface of the substrate and on inner surfaces of the trench, so that the trench is par ...



Click the thumbnails below to visualize the patent trend.