1
David Sherrer
James W Getz, David W Sherrer, John J Fisher: Electronic device packages and methods of formation. Samsung Electronics, Sughrue Mion PLLC, June 19, 2012: US08203207 (37 worldwide citation)

Provided are electronic device packages and their methods of formation. The electronic device packages include an electronic device mounted on a substrate, a conductive via and a locally thinned region in the substrate. The invention finds application, for example, in the electronics industry for he ...


2
David Sherrer
David W Sherrer, Noel A Heiks: Optoelectronic component including optoelectronic device flip-chip mounted to substrate and conductor extending through the substrate. Samsung Electronics, Sughrue Mion PLLC, November 13, 2012: US08309908 (2 worldwide citation)

Provided are optoelectronic components which include an optoelectronic device and a structure for self-aligning the optoelectronic device. Also provided are optoelectronic modules and methods of forming optoelectronic components.


3
Belgacem Haba Belgacem (Bel) Haba
Joseph C Fjelstad, Para K Segaram, Belgacem Haba: Direct-connect signaling system. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, August 2, 2011: US07989929 (1 worldwide citation)

A direct-connect signaling system including a printed circuit board and first and second integrated circuit packages disposed on the printed circuit board. A plurality of electric signal conductors extend between the first and second integrated circuit packages suspended above the printed circuit bo ...


4
David Sherrer
David W Sherrer, Mindaugas F Dautartas, Neil Ricks, Dan A Steinberg: Optical device package. Samsung Electronics, Sughrue Mion PLLC, March 19, 2013: US08399897 (1 worldwide citation)

An optical device package includes a substrate having an upper surface, a distal end, a proximal end, and distal and proximal longitudinally extending notches co-linearly aligned with each other. A structure is mounted to the substrate and has at least one recessed portion. The structure can be a li ...


5
Garo Khanarian
Garo Khanarian, Margaret M Pafford, David Sherrer: Micro-optical device and method of making same. Samsung Electronics, Sughrue Mion PLLC, November 1, 2011: US08050526

A method for making a micro optical device includes providing an optical element, providing a glass perform, providing a substrate with a precision formed feature designed to passively position the optical element relative to the substrate, and bonding the optical element to the substrate using the ...


6
EUNKEE HONG
Juseon Goo, Eunkee Hong, Hong Gun Kim, Kyu Tae Na: Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device. Samsung Electronics, Myers Bigel Sibley & Sajovec, September 8, 2009: US07585786 (6 worldwide citation)

Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated ...


7
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec, March 21, 2006: US07015144 (5 worldwide citation)

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


8
EUNKEE HONG
Yong Won Cha, Kyu Tae Na, Yong Soon Choi, Eunkee Hong, Ju Seon Goo: Methods of forming trench isolation layers using high density plasma chemical vapor deposition. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, February 19, 2008: US07332409 (5 worldwide citation)

A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.


9
EUNKEE HONG
Jong Wan Choi, Hong Gun Kim, Kyu Tae Na, Eunkee Hong: Method of forming a trench isolation layer and method of manufacturing a non-volatile memory device using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, October 13, 2009: US07601588 (4 worldwide citation)

In a method of forming a device isolation layer for minimizing a parasitic capacitor and a non-volatile memory device using the same, a trench is formed on a substrate. A first insulation layer is formed on a top surface of the substrate and on inner surfaces of the trench, so that the trench is par ...


10
EUNKEE HONG
Jong wan Choi, Yong soon Choi, Bo young Lee, Eunkee Hong, Eun kyung Baek, Ju seon Goo: Methods of fabricating flash memory devices comprising forming a silicide on exposed upper and side surfaces of a control gate. Samsung Electronics, Myers Bigel Sibley & Sajovec, October 25, 2011: US08043914 (2 worldwide citation)

Provided are methods of fabricating flash memory devices that may prevent a short circuit from occurring between cell gate lines. Methods of fabricating such flash memory devices may include forming gate lines including a series of multiple cell gate lines and multiple selection gate lines. Each gat ...



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