1
Deodatta Shenai-Khatkhate
Woelk Egbert, Shenai Khatkhate Deodatta V: Germanium compound. Rohm &Amp Haas Electronic Materials, December 9, 2004: JP2004-349684 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide germanium compounds suitable for use as vapor deposition precursors for germanium films, and a method for depositing films containing germanium, using such compounds.SOLUTION: A halogermanium compound as a first germanium compound and other organic germanium compound ...


2
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta V, Manzik Stephen J: Precursor composition and method. Rohm &Amp Haas Electronic Materials, April 16, 2009: JP2009-079290 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide a precursor composition and a method therefor relating generally to the field of vapor deposition precursor compositions and their use in vapor deposition of thin films.SOLUTION: Compositions containing an amido-group-containing vapor deposition precursor and a stabi ...


3
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta V, Li Huazhi, Wang Qing Min: Organometallic compound. Rohm &Amp Haas Electronic Materials, April 16, 2009: JP2009-079285

PROBLEM TO BE SOLVED: To provide an organometallic compound useful for chemical vapor deposition or atomic layer deposition, of thin films.SOLUTION: Heteroleptic organometallic compounds containing at least one formamidinate ligand are provided. These heteroleptic organometallic compounds have more ...


4
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta V, Wang Qing Min: Organometallic compound. Rohm &Amp Haas Electronic Materials, May 29, 2008: JP2008-120788

PROBLEM TO BE SOLVED: To provide an organometallic compound useful for thin film's atomic layer deposition and chemical vapor deposition.SOLUTION: The organometallic compound in the form of an imino complex is provided. Such a complex is particularly suitable for use as a vapor deposition precursor. ...


5
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta V, Woelk Egbert: Organometallic composition. Rohm &Amp Haas Electronic Materials, July 5, 2007: JP2007-169785

PROBLEM TO BE SOLVED: To provide an organometallic composition.SOLUTION: Compositions including germanium compounds suitable for use as vapor phase deposition precursors for germanium-containing films are provided. Methods of depositing films containing germanium using such compositions are also pro ...


6
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta V, Power Michael B: Purification of metal-containing compounds. Rohm &Amp Haas Electronic Materials, October 26, 2006: JP2006-290889

PROBLEM TO BE SOLVED: To provide a process for consistently providing highly pure metal-containing compounds, particularly organic metal compounds, containing metal impurities and oxygen-containing impurities at very low levels.SOLUTION: The process of purifying metal-containing compounds employing ...


7
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta V, Wang Qing Min: Organometallic compounds. Rohm &Amp Haas Electronic Materials, May 15, 2008: JP2008-110961

PROBLEM TO BE SOLVED: To provide organometallic compounds useful for a chemical vapor deposition of thin films and an atomic layer deposition.SOLUTION: Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for ...


8
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta V: Delivery device. Rohm &Amp Haas Electronic Materials, December 6, 2007: JP2007-314878

PROBLEM TO BE SOLVED: To provide a delivery system designed for the requirements of vapor phase epitaxy and other chemical vapor deposition equipment.SOLUTION: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor comp ...


9
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta V, Wang Qing Min: Organometallic compound. Rohm &Amp Haas Electronic Materials, May 22, 2008: JP2008-115160

PROBLEM TO BE SOLVED: To provide an organometallic compound useful for chemical vapor phase deposition (CVD) and atomic layer deposition (ALD) of a thin film.SOLUTION: This organometallic compound containing a phosphoamidinate ligand is provided. Such the compound is particularly suitable for a use ...


10
Wang Deyan: Composition and method for immersion lithography. Rohm &Amp Haas Electronic Materials, November 9, 2006: JP2006-309245 (68 worldwide citation)

PROBLEM TO BE SOLVED: To provide new photoresist compositions useful for immersion lithography.SOLUTION: Preferred photoresist compositions comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions comprise ( ...