1
Masao Shinozaki, Kenji Nishimoto, Takashi Akioka, Yutaka Kohara, Sanae Asari, Shusaku Miyata, Shinji Nakazato: Semiconductor integrated circuit device. Renesas Technology Corporation, Hitachi ULSI Systems, Reed Smith, Stanley P Fisher Esq, Juan Carlos A Marquez Esq, November 8, 2005: US06963136 (114 worldwide citation)

Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and ...


2
Seiji Miura, Kazushige Ayukawa: Semiconductor device with non-volatile memory and random access memory. Renesas Technology Corporation, Stanley P Fisher Esq, Juan Carlos A Marquez Esq, Reed Smith, September 14, 2004: US06791877 (107 worldwide citation)

A semiconductor device including a large capacity non-volatile memory and at least one random access memory, said the access time of said device being matched to the access time of each random access memory. The semiconductor memory device is comprised of: a non-volatile memory FLASH having a first ...


3
Toshihiko Tanaka, Takashi Hattori: Semiconductor device manufacturing method. Renesas Technology Corporation, Miles & Stockbridge P C, March 9, 2004: US06703328 (86 worldwide citation)

A circuit pattern, a reticle alignment mark, a bar code, and a discrimination mark which are formed on a glass plate of a photo mask is constituted of a photo sensitive and photo attenuative material containing a fine particle material and a binder. Discrimination of the photo mask is performed by i ...


4
Seiji Miura, Kazushige Ayukawa, Tetsuya Iwamura: System and method for using dynamic random access memory and flash memory. Renesas Technology Corporation, Reed Smith, Stanley P Fisher Esq, Juan Carlos A Marquez Esq, November 14, 2006: US07136978 (81 worldwide citation)

A system and method are provided for using dynamic random access memory and flash memory. In one example, the memory system comprises a nonvolatile memory; synchronous dynamic random access memories; circuits including a control circuit which is coupled with the nonvolatile memory and the synchronou ...


5
Noriyuki Kurakami, Kazuhiko Hikasa, Ryoichi Takano, Patrick Wurm: Method of ramping up output level of power amplifier of radio communication system, communication semiconductor integrated circuit, and radio communication system. Renesas Technology Corporation, TTPCOM, Mattingly Stanger Malur & Brundidge P C, January 29, 2008: US07324787 (62 worldwide citation)

In a radio communication system having a phase control loop for phase modulation and an amplitude control loop for amplitude modulation and being capable of time divisional transmission and reception under a predetermined time management, when transmission in a first mode is switched to transmission ...


6
Kunihito Rikino, Yasuhiko Sasaki, Kazuo Yano, Naoki Kato: Semiconductor integrated circuit device. Renesas Technology Corporation, Antonelli Terry Stout & Kraus, February 10, 2004: US06690206 (56 worldwide citation)

A pass-transistor logic circuit configuration that can form a high-speed chip in a small area with short wire length. In a selector circuit PMOS and NMOS transistors with different gate signals but with the same drain outputs are arranged, respectively, so their diffusion layers are shared. The PMOS ...


7
Takayuki Kawahara, Nozomu Matsuzaki, Terumi Sawase, Masaharu Kubo: Semiconductor device. Renesas Technology Corporation, Stanley P Fisher Esq, Juan Carlos A Marquez Esq, Reed Smith, August 31, 2004: US06785165 (54 worldwide citation)

A semiconductor device including a nonvolatile memory unit and a variable logic unit mounted on a chip is configured to achieve higher speed operation at a lower voltage. The semiconductor device includes a nonvolatile memory unit comprising a plurality of rewritable nonvolatile memory cells and a v ...


8
Katsuya Oda, Katsuyoshi Washio: Multi-layered, single crystal field effect transistor. Renesas Technology Corporation, Stanley P Fisher Esq, Juan Carlos A Marquez Esq, Reed Smith, April 20, 2004: US06724019 (53 worldwide citation)

A semiconductor device having an MODFET and at least one other device formed on one identical semiconductor substrate, in which an intrinsic region for the MODFET is formed by selective growth in a groove formed on a semiconductor substrate having an insulation film on the side wall of the groove, a ...


9
Norikatsu Takaura, Hideyuki Matsuoka, Riichiro Takemura, Kousuke Okuyama, Masahiro Moniwa, Akio Nishida, Kota Funayama, Tomonori Sekiguchi: Semiconductor memory device using vertical-channel transistors. Renesas Technology Corporation, December 30, 2003: US06670642 (50 worldwide citation)

The invention provides a semiconductor memory device comprising a plurality of word lines, a plurality of bit lines, and a plurality of static memory cells each having a first, second, third, fourth, fifth, and sixth transistors. While each of channels of the first, second, third, and fourth transis ...


10
Kenichi Kuroda, Kozo Watanabe, Hirohiko Yamamoto: Semiconductor device with an active region and plural dummy regions. Renesas Technology Corporation, Hitachi ULSI Systems, Antonelli Terry Stout & Kraus, February 17, 2004: US06693315 (49 worldwide citation)

There is provided a technique for improving the flatness at the surface of members embedded in a plurality of recesses without resulting in an increase in the time required for the manufacturing processes. According to this technique, the dummy patterns can be placed up to the area near the boundary ...