1
Jian Li, Daniel Chang, Ho Yuan Yu: MOSFET having a JFET embedded as a body diode. QSpeed Semiconductor, Morgan Lewis & Bockius, August 26, 2008: US07417266 (22 worldwide citation)

A field effect transistor, in accordance with one embodiment, includes a metal-oxide-semiconductor field effect transistor (MOSFET) having a junction field effect transistor (JFET) embedded as a body diode.


2
Jonathan Klein, Morris Tsou: Composite field effect transistor. QSpeed Semiconductor, Morgan Lewis & Bockius, March 25, 2008: US07348826 (20 worldwide citation)

A composite field effect transistor, in accordance with one embodiment, includes a zener diode, a junction field effect transistor and a metal-oxide-semiconductor field effect transistor. A gate of the junction field effect transistor is coupled to an anode of the zener diode. A cathode of the zener ...


3
Richard Francis, Jian Li, Yang Yu Fan, Eric Johnson: Ultrafast recovery diode. QSpeed Semiconductor, Morgan Lewis & Bockius, April 13, 2010: US07696598 (16 worldwide citation)

An ultrafast recovery diode. In a first embodiment, a rectifier device comprises a substrate of a first polarity, a lightly doped layer of the first polarity coupled to the substrate and a metallization layer disposed with the lightly doped layer. The ultrafast recovery diode includes a plurality of ...


4
Richard Francis, Yang Yu Fan, Eric Johnson, Hy Hoang: Structure and method for a fast recovery rectifier structure. Qspeed Semiconductor, Morgan Lewis & Bockius, April 13, 2010: US07696540 (15 worldwide citation)

An apparatus and method for a fast recovery rectifier structure. Specifically, the structure includes a substrate of a first dopant. A first epitaxial layer lightly doped with the first dopant is coupled to the substrate. A first metallization layer is coupled to the first epitaxial layer. A plurali ...


5
Harold L Massie, Kuang Ming Daniel Chang: Circuit and method for driving a junction field effect transistor. QSpeed Semiconductor, Morgan Lewis & Bockius, June 29, 2010: US07746156 (14 worldwide citation)

A circuit and method for driving a field effect transistor is disclosed. A switching circuit includes a driver device having a signal input, a supply voltage input, and an output. The driver output is coupled to a JFET. A converter couples to the JFET and provides an output of the switching circuit. ...


6
Ho Yuan Yu, Chong Ming Lin: Method of manufacturing a Schottky barrier rectifier. Qspeed Semiconductor, Morgan Lewis & Bockius, May 22, 2007: US07220661 (13 worldwide citation)

A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second doped region is disposed between the ...


7
Ho Yuan Yu, Jian Li: Multiple doped channel in a multiple doped gate junction field effect transistor. Qspeed Semiconductor, Morgan Lewis & Bockius, May 1, 2007: US07211845 (10 worldwide citation)

A multiple doped channel in a multiple doped gate junction field effect transistor. In accordance with a first embodiment of the present invention, a junction field effect transistor (JFET) circuit structure comprises a vertical channel. The vertical channel comprises multiple doping regions. The ve ...


8
Ho Yuan Yu, Chong Ming Lin: Schottky barrier rectifier and method of manufacturing the same. QSpeed Semiconductor, Morgan Lewis & Bockius, July 3, 2007: US07238976 (9 worldwide citation)

A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second doped region is disposed between the ...


9
Chong Ming Lin, Jay Denning, Ho Yuan Yu: Structure and method for enhanced performance in semiconductor substrates. QSpeed Semiconductor, Morgan Lewis & Bockius, June 5, 2007: US07227242 (9 worldwide citation)

An etched substrate structure is augmented by conductive material to provide enhanced electrical and/or thermal performance. A semiconductor device substrate comprising active regions defined on a top surface is masked and etched to define a pattern of blind features in a bottom surface of the subst ...


10
Chong Ming Lin, Ho Yuan Yu: Programmable junction field effect transistor and method for programming same. Qspeed Semiconductor, Morgan Lewis & Bockius, February 2, 2010: US07655964 (7 worldwide citation)

A programmable junction field effect transistor (JFET) with multiple independent gate inputs. A drain, source and a plurality of gate regions for controlling a conductive channel between the source and drain are fabricated in a semiconductor substrate. A first portion the gate regions are coupled to ...