1
Ulrich Klostermann
Alexander Duch, Ulrich Klostermann, Michael Kund: Electric device protection circuit and method for protecting an electric device. Qimonda, ALTIS Semiconductor SNC, Slater & Matsil L, July 6, 2010: US07751163 (40 worldwide citation)

An electric device protection circuit comprises at least one conductive bridging unit which electrically connects a terminal of the electric device to a protection node set to a protection potential, the protection potential being chosen such that the conductive bridging unit switches from a resisti ...


2
Ulrich Klostermann
Ulrich Klostermann: Integrated circuits; methods for manufacturing an integrated circuit and memory module. Qimonda, Altis Semiconductor SNC, November 23, 2010: US07838861 (34 worldwide citation)

Embodiments of the present invention relate generally to integrated circuits, to methods for manufacturing an integrated circuit and to a memory module. In an embodiment of the invention, an integrated circuit is provided having a programmable arrangement. The programmable arrangement includes a sub ...


3
Ulrich Klostermann
Rainer Leuschner, Ulrich Klostermann: Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module. Qimonda, ALTIS Semiconductor SNC, Slater & Matsil L, April 13, 2010: US07697322 (26 worldwide citation)

Embodiments of the invention relate generally to integrated circuits, to a method for manufacturing an integrated circuit, to a method for decreasing the influence of magnetic fields, and to a memory module. In an embodiment of the invention, an integrated circuit having a magnetic tunnel junction i ...


4
Ulrich Klostermann
Ulrich Klostermann, Rainer Leuschner: Integrated circuit, method of manufacturing an integrated circuit, and memory module. Qimonda, Altis Semiconductor SNC, December 21, 2010: US07855435 (12 worldwide citation)

According to one embodiment of the present invention, an integrated circuit including a plurality of memory cells is provided. Each memory cell includes a resistivity changing memory element which includes a top electrode, a bottom electrode, and resistivity changing material being disposed between ...


5
Ulrich Klostermann
Human Park, Ulrich Klostermann, Rainer Leuschner: Condensed memory cell structure using a FinFET. Qimonda, Altis Semiconductor SNC, John S Economou, March 4, 2014: US08665629 (10 worldwide citation)

An integrated circuit and method for manufacturing an integrated circuit are described. In one embodiment, the integrated circuit includes a memory cell that includes a resistivity changing memory element. The resistivity changing memory element is electrically coupled to a select transistor that in ...


6
Dr. Elke Erben
Stephan Kudelka, Lars Oberbeck, Uwe Schroeder, Tim Boescke, Johannes Heitmann, Annette Saenger, Joerg Schumann, Elke Erben: Deposition method for a transition-metal-containing dielectric. Qimonda, Fay Kaplun & Marcin, February 23, 2010: US07666752 (7 worldwide citation)

The present invention relates to a method for depositing a dielectric material comprising a transition metal compound. After providing a substrate, a first pre-cursor comprising a transition metal compound and a second pre-cursor predominantly comprising at least one of water vapour, ammonia and hyd ...


7
Ulrich Klostermann
Dietmar Gogl, Rainer Leuschner, Ulrich Klostermann: Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit. Qimonda, ALTIS Semiconductor SNC, March 8, 2011: US07903454 (7 worldwide citation)

According to one embodiment of the present invention, an integrated circuit includes a plurality of thermal selectable memory cells, each memory cell being connected to a conductive line, the conductive line having a first portion for applying a heating current, and a second portion for applying a p ...


8
Ulrich Klostermann
Dieter Andres, Rainer Bruchhaus, Ulrike Gruening Von Schwerin, Ulrich Klostermann, Franz Kreupl, Michael Kund, Petra Majewski, Christian Ruester, Bernhard Ruf, Ralf Symanczyk, Klaus Dieter Ufert: Integrated circuit. Qimonda, John S Economou, November 22, 2011: US08063394 (6 worldwide citation)

According to an embodiment, an integrated circuit including a plurality of resistance changing memory cells is disclosed. Each memory cell includes a first electrode, a second electrode and resistance changing memory element arranged between the first electrode and the second electrode. A front surf ...


9
Ulrich Klostermann
Manfred Ruehrig, Ulrich Klostermann, Michael Vieth: Integrated circuit, memory module, and method of manufacturing an integrated circuit. Qimonda, John S Economou, February 22, 2011: US07893511 (6 worldwide citation)

An integrated circuit includes a plurality of magnetic tunneling junction stacks, each magnetic tunneling junction stack including a reference layer, a barrier layer and a free layer, wherein the plurality of magnetic tunneling junction stacks share a continuous common reference layer.


10
Ulrich Klostermann
Rok Dittrich, Ulrich Klostermann: Integrated circuit, cell arrangement, method of operating an integrated circuit, memory module. Qimonda, Altis Semiconductor SNC, May 12, 2009: US07532506 (5 worldwide citation)

An integrated circuit having a cell arrangement is provided. The cell arrangement includes at least one magnetoresistive memory cell, a first line providing a first line current, and a second line providing a second line current. The cell arrangement further includes a controller controlling the app ...



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