1
Jack L Jewell: Conductive element with lateral oxidation barrier. Picolight Incorporated, Jagtiani & Associates, February 17, 1998: US05719891 (81 worldwide citation)

A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers whic ...


2
Jack L Jewell, Stanley Swirhun, Mikhail Kaluzhny, Andrew Moore: Electro-opto-mechanical assembly for coupling a light source or receiver to an optical waveguide. Picolight Incorporated, Jagtiani & Associates, June 5, 2001: US06243508 (65 worldwide citation)

A novel electro-opto-mechanical assembly is provided. The electro-opto-mechanical assembly comprising: a first wafer, the wafer having a top and bottom surface; at least one optical element disposed on one surface of the first wafer; at least one discrete opto-electronic transducer element disposed ...


3
Jack L Jewell: Oxidizable semiconductor device having cavities which allow for improved oxidation of the semiconductor device. Picolight Incorporated, Jagtiani & Associates, January 11, 2000: US06014395 (47 worldwide citation)

A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers whic ...


4
Jack L Jewell: Oxidizable semiconductor device having cavities which allow for improved oxidation of the semiconductor device. Picolight Incorporated, Jagtiani & Associates, May 11, 1999: US05903589 (41 worldwide citation)

A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers whic ...


5
Jack L Jewell: Device for coupling a light source or receiver to an optical waveguide. Picolight, Jagtiani & Associates, August 17, 1999: US05940564 (38 worldwide citation)

An improved connector is provided. The connector comprises: an optoelectronic transducer having a transducer axis through a center of the optoelectronic transducer, and a first alignment means integrated with the optoelectronic transducer; an optical fiber having a fiber axis being different than th ...


6
Jack L Jewell, Henryk Temkin: Extended wavelength strained layer lasers having strain compensated layers. Picolight Incorporated, Jagtiani & Associates, October 20, 1998: US05825796 (38 worldwide citation)

Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of ...


7
Jack L Jewell, Henryk Temkin: Extended wavelength strained layer lasers having nitrogen disposed therein. Picolight Incorporated, Jagtiani & Associates, February 17, 1998: US05719894 (37 worldwide citation)

Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of ...


8
Jack L Jewell: Conductive element with lateral oxidation barrier. Picolight Incorporated, Jagtiani & Associates, July 31, 2001: US06269109 (34 worldwide citation)

A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers whic ...


9
Jack L Jewell, Henryk Temkin: Extended wavelength strained layer lasers having strain compensated layers. Picolight Incorporated, Jagtiani & Associates, September 28, 1999: US05960018 (33 worldwide citation)

Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of ...


10
Jack L Jewell, Henryk Temkin: Extended wavelength strained layer lasers having short period superlattices. Picolight Incorporated, Jagtiani & Associates, February 17, 1998: US05719895 (32 worldwide citation)

Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of ...