1
Daniel Xu: Carbon-containing interfacial layer for phase-change memory. Ovonyx, Trop Pruner & Hu P C, May 20, 2003: US06566700 (405 worldwide citation)

A phase-change memory cell may be formed with a carbon-containing interfacial layer that heats a phase-change material. By forming the phase-change material in contact, in one embodiment, with the carbon containing interfacial layer, the amount of heat that may be applied to the phase-change materia ...


2
Jon Maimon, Patrick Klersy: Method for making small pore for use in programmable resistance memory element. Ovonyx, Philip H Schlazer, Marvin S Siskind, September 2, 2003: US06613604 (405 worldwide citation)

A method for making a small pore. The defined pore is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.


3
Charles Dennison: METHOD FOR FORMING PHASE-CHANGE MEMORY BIPOLAR ARRAY UTILIZING A SINGLE SHALLOW TRENCH ISOLATION FOR CREATING AN INDIVIDUAL ACTIVE AREA REGION FOR TWO MEMORY ARRAY ELEMENTS AND ONE BIPOLAR BASE CONTACT. Ovonyx, Trop Pruner & Hu P C, July 15, 2003: US06593176 (391 worldwide citation)

The invention relates to a process of forming a phase-change memory device. The process includes forming a salicide structure in peripheral logic portion of the substrate and preventing forming salicide structures in the memory array. The device may include a double-wide trench into which a single f ...


4
Chien Chiang, Guy C Wicker: Method to enhance performance of thermal resistor device. Ovonyx, Trop Pruner & Hu P C, September 16, 2003: US06621095 (383 worldwide citation)

An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled to the contact and the phase change element, wherein a portion o ...


5
Charles Dennison: Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact. Ovonyx, Trop Pruner & Hu P C, March 18, 2003: US06534781 (382 worldwide citation)

The invention relates to a process of forming a phase-change memory device. The process includes forming a salicide structure in peripheral logic portion of the substrate and preventing forming salicide structures in the memory array. The device may include a double-wide trench into which a single f ...


6
Tyler A Lowrey, Manzur Gill: Single level metal memory cell using chalcogenide cladding. Ovonyx, Trop Pruner & Hu P C, May 20, 2003: US06567293 (380 worldwide citation)

An apparatus including a volume of phase change material disposed between a first conductor and a second conductor on a substrate, and a plurality of electrodes coupled to the volume of phase change material and the first conductor. A method including introducing, over a first conductor on a substra ...


7
Tyler A Lowrey, Charles H Dennison: Utilizing atomic layer deposition for programmable device. Ovonyx, Trop Pruner & Hu P C, January 28, 2003: US06511867 (379 worldwide citation)

In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact, the contact formed on a substrate. An electrode is conformally deposited on a wall of the diel ...


8
Jon Maimon, Andrew Pomerene: Method for making programmable resistance memory element using silylated photoresist. Ovonyx, Philip H Schlazer, Marvin S Siskind, July 8, 2003: US06589714 (377 worldwide citation)

A method of making a electrically operated programmable resistance memory element. A silylated photoresist sidewall spacer is used as a mask for form raised portions on an edge of a conductive layer. The modified conductive layer is used as an electrode for the memory element.


9
Charles H Dennison, Guy C Wicker, Tyler A Lowrey, Stephen J Hudgens, Chien Chiang, Daniel Xu: Reduced area intersection between electrode and programming element. Ovonyx, Trop Pruner & Hu P C, January 6, 2004: US06673700 (370 worldwide citation)

A method comprising forming a sacrificial layer over less than the entire portion of a contact area on a substrate, the sacrificial layer having a thickness defining an edge over the contact area, forming a spacer layer over the spacer, the spacer layer conforming to the shape of the first sacrifici ...


10
Tyler Lowrey, Guy C Wicker: Programmable resistance memory arrays with reference cells. Ovonyx, Philip H Schlazer, Marvin S Siskind, David W Schumaker, November 6, 2001: US06314014 (307 worldwide citation)

A memory system comprising memory cells and reference cells each including a programmable resistance element. The resistance state of a memory cell is determined by comparing a sense signal developed by the memory cell with a reference signal developed by one or more of the reference cells. The prog ...



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