1
Erwin Meinders
Martijn Henri Richard Lankhorst, Erwin Rinaldo Meinders, Robertus Adrianus Maria Wolters, Franciscus Petrus Widdershoven: Electric device with phase change material and parallel heater. NXP, Peter Zawilski, December 11, 2007: US07307267 (7 worldwide citation)

The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the phase change material is in the first phase and a second electric ...


2
Erwin Meinders
Martijn Henri Richard Lankhorst, Erwin Rinaldo Meinders, Robertus Adrianus Maria Wolters, Franciscus Petrus Widdershoven: Electric device comprising phase change material. NXP, February 14, 2012: US08115239 (3 worldwide citation)

The electric device according to the invention has a resistor comprising a layer of a phase change material which is changeable between a first phase with a first electrical resistivity and a second phase with a second electrical resistivity different from the first electrical resistivity. The phase ...


3
Erwin Meinders
Martijn Henri Richard Lankhorst, Liesbeth Van Pieterson, Robertus Adrianus Maria Wolters, Erwin Rinaldo Meinders: Electric device comprising phase change material. NXP, July 15, 2014: US08779474 (2 worldwide citation)

The electric device (1, 100) has a body (2, 101) with a resistor (7, 250) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 250) has an electric resistance which depends on whether the phase change material is in the first phase or the sec ...


4

5

6
Hans Peter Löbl, Robert Frederick Milsom, Christof Metzmacher: Resonator structure and method of producing it. NXP, December 16, 2008: US07466213 (188 worldwide citation)

In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at ...


7
Kim Le Phan: MRAM architecture for low power consumption and high selectivity. NXP, Peter Zawilski, October 2, 2007: US07277317 (126 worldwide citation)

The present invention provides a magnetoresistive memory cell (30), comprising a magnetoresistive memory element (31), a first current line (32) and a second current line (33), the first and the second current line (32, 33) crossing each other at a cross-point region but not being in direct contact. ...


8
Franciscus Petrus Widdershoven, Michiel Jos Van Duuren: Self-aligned 2-bit “double poly CMP” flash memory cell. NXP, Peter Zawilski, May 8, 2007: US07214579 (102 worldwide citation)

Fabrication of a memory cell, the cell including a first floating gate stack (A), a second floating gate stack (B) and an intermediate access gate (AG), the floating gate stacks (A, B) including a first gate oxide (4), a floating gate (FG), a control gate (CG; CGl, CGu), an interpoly dielectric laye ...


9
Philippe Meunier Beillard, Mathieu Rosa Jozef Caymax: Method of epitaxial deoposition of an n-doped silicon layer. NXP, October 20, 2009: US07605060 (100 worldwide citation)

The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) comprising silicon is provided with an n-type doped semiconductor region (2) comprising silicon by means of an epitaxial deposition process, wherein the epitaxial deposition process of the n- ...


10
Radu Catalin Surdeanu, Youri Ponomarev: Method of fabricating a double gate field effect transistor device, and such a double gate field effect transistor device. NXP, Peter Zawilski, April 21, 2009: US07521323 (98 worldwide citation)

The present invention discloses a method of forming a double gate field effect transistor device, and such a device formed with the method. One starts with a semiconductor-on-insulator substrate, and forms a first gate, source, drain and extensions, and prepares the second gate. Then the substrate i ...