1
Ravi Laxman
Patrick A Van Cleemput, Ravi Kumar Laxman, Jen Shu, Michelle T Schulberg, Bunsen Nie: Method to deposit SiOCH films with dielectric constant below 3.0. Novellus Systems, Tom Chen, Skjerven Morrill MacPherson, January 22, 2002: US06340628 (90 worldwide citation)

A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO


2
Paul Brunemeier, Ph.D.
Paul E Brunemeier, Archita Sengupta, Justin F Gaynor, Robert H Havemann: Inhomogeneous materials having physical properties decoupled from desired functions. Novellus Systems, Silicon Valley Patent Group, March 29, 2005: US06873026 (16 worldwide citation)

A composition comprises a first component that provides a predetermined response to radiation, and a second component. Upon curing of the composition, portions of the first component bind together portions of the second component to form an inhomogeneous material having physical properties substanti ...


3
George D Papasouliotis, Ashima B Chakravarti, Richard A Conti, Laertis Economikos, Patrick A Van Cleemput: High throughput chemical vapor deposition process capable of filling high aspect ratio structures. Novellus Systems, International Business Machines Corporation, Tom Chen, Skjerven Morrill MacPherson Franklin & Friel, February 29, 2000: US06030881 (256 worldwide citation)

A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and etch steps having varying etch rate-to-deposition rate (etch/dep) ratios. The first step uses an etch/dep ratio less than one to qu ...


4
Atiye Bayman, Md Sazzadur Rahman, Weijie Zhang, Bart van Schravendijk, Vishal Gauri, George D Papasoulitotis, Vikram Singh: Gap fill for high aspect ratio structures. Novellus Systems, Beyer Weaver & Thomas, July 22, 2003: US06596654 (241 worldwide citation)

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a proce ...


5
Raihan M Tarafdar, George D Papasouliotis, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Sequential deposition/anneal film densification method. Novellus Systems, Beyer Weaver & Thomas, December 12, 2006: US07148155 (227 worldwide citation)

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The d ...


6
Everhardus P van de Ven, Eliot K Broadbent, Jeffrey C Benzing, Barry L Chin, Christopher W Burkhart: Gas-based substrate protection during processing. Novellus Systems, Skjerven Morrill MacPherson Franklin & Friel, August 24, 1993: US05238499 (218 worldwide citation)

A suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced onto the backside of wafers being processed in a CVD reactor during the deposition of tungsten or other metals, metal nitrides and silicides, to avoid deposition of material on the ba ...


7
Patrick A Van Cleemput, George D Papasouliotis, Mark A Logan, Bart van Schravendijk, William J King: Very high aspect ratio gapfill using HDP. Novellus Systems, Tom Chen, Skjerven Morrill MacPherson, May 28, 2002: US06395150 (201 worldwide citation)

A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposi ...


8
Patrick A Van Cleemput, Thomas W Mountsier: High aspect ratio gapfill process by using HDP. Novellus Systems, David E Steuber, Tom Chen, Skjerven Morrill MacPherson Franklin & Friel, February 16, 1999: US05872058 (187 worldwide citation)

A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes while reducing the concentration of the inert gas, such as Ar, to 0-13% of the total process gas flow. By reducing the inert gas concentration, sputtering or etching is reduced, resu ...


9
Chi I Lang, Judy H Huang, Michael Barnes, Sunil Shanker: CVD flowable gap fill. Novellus Systems, Weaver Austin Villeneuve & Sampson, March 29, 2011: US07915139 (182 worldwide citation)

The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so ...


10
George D Papasouliotis, Robert D Tas: Method of chemical modification of structure topography. Novellus Systems, Tom Chen, MacPherson Kwok Chen & Heid, September 21, 2004: US06794290 (169 worldwide citation)

A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and hydrogen etch steps. The first step uses an etch/dep ratio less than one to quickly fill the gap. The first step is interrupted bef ...



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