1
Bantval J Baliga: Silicon carbide power MOSFET with floating field ring and floating field plate. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, August 3, 1993: US05233215 (210 worldwide citation)

A silicon carbide power MOSFET device includes a first silicon carbide layer, epitaxially formed on the silicon carbide substrate of opposite conductivity type. A second silicon carbide layer of the same conductivity type as the substrate is formed on the first silicon carbide layer. A power field e ...


2
Mehmet C Ozturk, Douglas T Grider, Mahesh K Sanganeria, Stanton P Ashburn: Selective deposition of doped silion-germanium alloy on semiconductor substrate. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, September 7, 1993: US05242847 (102 worldwide citation)

Doped silicon-germanium alloy is selectively deposited on a semiconductor substrate, and the semiconductor substrate is then heated to diffuse at least some of the dopant from the silicon-germanium alloy into the semiconductor substrate to form a doped region at the face of the semiconductor substra ...


3
Bantval J Baliga: Silicon carbide field effect device. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, June 21, 1994: US05323040 (69 worldwide citation)

A silicon carbide field effect device includes vertically stacked silicon carbide regions of first conductivity type, extending from a lowermost drain region to an uppermost source region. In between the drain and source regions, a drift region and a channel region are provided. The drift region ext ...


4
Bantval J Baliga, Mohit Bhatnagar: Method of fabricating silicon carbide field effect transistor. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, June 21, 1994: US05322802 (43 worldwide citation)

A silicon carbide field effect transfer of the present invention includes a base and source region each formed by a series of amorphizing, implanting and recrystallizing steps. Moreover, the drain, base and source regions extend to a face of a monocrystalline silicon carbide substrate and the source ...


5
Shang hui L Tu, Bantval J Baliga: Merged P-I-N/Schottky power rectifier having extended P-I-N junction. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, August 31, 1993: US05241195 (39 worldwide citation)

A merged P-I-N/Schottky power rectifier includes trenches, and P-N junctions along the walls of the trenches and along the bottoms of the trenches. By forming the P-N junctions along the trench walls, the total area of the P-N junctions relative to the surface area of the device can be increased, to ...


6
Umesh K Mishra, Robert J Trew: High current, high voltage breakdown field effect transistor. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, January 28, 1992: US05084743 (37 worldwide citation)

The gate voltage breakdown of an integrated circuit field effect transistor, especially a compound semiconductor metal semiconductor field effect transistor (MESFET) and high electron mobility transistor (HEMT) is dramatically increased by forming an electron trap layer on the surface of the device, ...


7
Bantval J Baliga: High voltage silicon carbide MESFETs and methods of fabricating same. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, March 21, 1995: US05399883 (37 worldwide citation)

A high voltage silicon carbide MESFET includes an electric field equalizing region in a monocrystalline silicon carbide substrate at a face thereof, which extends between the drain and gate of the MESFET and between the source and gate of the MESFET. The region equalizes the electric field between t ...


8
Bantval J Baliga, Mohit Bhatnagar: Silicon carbide field effect transistor. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, August 16, 1994: US05338945 (32 worldwide citation)

A silicon carbide field effect transistor of the present invention includes a base and source region each formed by a series of amorphizing, implanting and recrystallizing steps. Moreover, the drain, base and source regions extend to a face of a monocrystalline silicon carbide substrate and the sour ...


9
Mehmet C Ozturk, Douglas T Grider, Mahesh K Sanganeria, Stanton P Ashburn, Jimmie J Wortman: Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, August 9, 1994: US05336903 (31 worldwide citation)

Doped silicon-germanium alloy is selectively deposited on a semiconductor substrate, and the semiconductor substrate is then heated to diffuse at least some of the dopant from the silicon-germanium alloy into the semiconductor substrate to form a doped region at the face of the semiconductor substra ...


10
Bantval J Baliga: Method for forming an oxide-filled trench in silicon carbide. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, December 14, 1993: US05270244 (25 worldwide citation)

A method for forming an oxide-filled trench in silicon carbide includes the steps of amorphizing a portion of a monocrystalline silicon carbide substrate to thereby define an amorphous silicon carbide region in the substrate and then oxidizing the amorphous region to thereby form an oxide-filled tre ...