1
Bantval Jayant Baliga: Power semiconductor devices having improved high frequency switching and breakdown characteristics. North Carolina State University, Myers Bigel Sibley & Sajovec, December 7, 1999: US05998833 (350 worldwide citation)

Integrated power semiconductor devices having improved high frequency switching performance, improved edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes and lower trench-based source electrodes. The use of the trench ...


2
Jan Frederick Schetzina: Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well. North Carolina State University, Myers Bigel Sibley & Sajovec, April 4, 2000: US06046464 (339 worldwide citation)

An integrated heterostructure of Group III-V nitride compound semiconductors is formed on a multicomponent platform which includes a substrate of monocrystalline silicon carbide and a non-nitride buffer layer of monocrystalline zinc oxide. The zinc oxide may be formed by molecular beam epitaxy (MBE) ...


3
Jan Frederick Schetzina: Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same. North Carolina State University, Bell Seltzer Park & Gibson, October 21, 1997: US05679965 (298 worldwide citation)

An n-on-p integrated heterostructure device of Group III-V nitride compound semiconductor materials is formed on a substrate of p-type monocrystalline silicon carbide and includes a buffer layer of p-type aluminum nitride or p-type aluminum gallium nitride on the substrate. The n-on-p integrated het ...


4
Jan Frederick Schetzina: Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same. North Carolina State University, Bell Seltzer Park & Gibson, September 23, 1997: US05670798 (283 worldwide citation)

An integrated heterostructure of Group III-V nitride compound semiconductors is formed on a multicomponent platform which includes a substrate of monocrystalline silicon carbide and a non-nitride buffer layer of monocrystalline zinc oxide. The zinc oxide may be formed by molecular beam epitaxy (MBE) ...


5
Charles W Scarantino, H Troy Nagle, Leslie C Hall, Jeffrey Mueller, Chang Soo Kim: Methods, systems, and associated implantable devices for dynamic monitoring of physiological and biological properties of tumors. Sicel Technologies, North Carolina State University, Myers Bigel Sibley & Sajovec P A, June 11, 2002: US06402689 (281 worldwide citation)

Methods of monitoring and evaluating the status of a tumor undergoing treatment includes monitoring in vivo at least one physiological parameter associated with a tumor in a subject undergoing treatment, transmitting data from an in situ located sensor to a receiver external of the subject, analyzin ...


6
Bantval J Baliga: Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance. North Carolina State University, Bell Seltzer Park & Gibson, June 10, 1997: US05637898 (280 worldwide citation)

A power transistor having high breakdown voltage and low on-state resistance includes a vertical field effect transistor in a semiconductor substrate having a plurality of source, channel, drift and drain regions therein. A trench having a bottom in the drift region and opposing sidewalls which exte ...


7
Forrest Gregg McIntosh, Salah Mohamed Bedair, Nadia Ahmed El Masry, John Claassen Roberts: Stacked quantum well aluminum indium gallium nitride light emitting diodes. North Carolina State University, Bell Seltzer Park & Gibson, November 4, 1997: US05684309 (226 worldwide citation)

Stacked quantum well light emitting diodes include a plurality of stacked active layers of indium gallium nitride, separated by barrier layers of aluminum gallium nitride or aluminum indium gallium nitride, wherein the ratios of indium to gallium differ in at least two of the stacked active layers. ...


8
Injong Rhee: Methods and systems for forward error correction based loss recovery for interactive video transmission. North Carolina State University, Jenkins & Wilson P A, July 16, 2002: US06421387 (215 worldwide citation)

Real-time interactive video transmission in the current Internet has mediocre quality because of high packet loss rates. Loss of packets belonging to a video frame is evident not only in the reduced quality of that frame but also in the propagation of that distortion to successive frames. This error ...


9
Bantval J Baliga: Silicon carbide power MOSFET with floating field ring and floating field plate. North Carolina State University at Raleigh, Bell Seltzer Park & Gibson, August 3, 1993: US05233215 (210 worldwide citation)

A silicon carbide power MOSFET device includes a first silicon carbide layer, epitaxially formed on the silicon carbide substrate of opposite conductivity type. A second silicon carbide layer of the same conductivity type as the substrate is formed on the first silicon carbide layer. A power field e ...


10
Bantval Jayant Baliga: Power semiconductor devices having trench-based gate electrodes and field plates. North Carolina State University, Myers Bigel Sibley & Sajovec, May 14, 2002: US06388286 (196 worldwide citation)

Integrated power semiconductor devices having improved high frequency switching performance, improved edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes and lower trench-based source electrodes. The use of the trench ...