1
Hirohiko Izumi: Process for forming a thin metal film by chemical vapor deposition. Nippon Steel Corporation, Pollock Vande Sande & Priddy, April 26, 1994: US05306666 (183 worldwide citation)

When a thin metal film is formed on a substrate at a constant substrate temperature by chemical vapor deposition while alternately and discontinuously introducing a raw material gas and a reducing gas onto the substrate, reducing the raw material gas with the reducing gas on the substrate, thereby c ...


2
Kikuzo Sawada, Toshio Wada: Non-volatile semiconductor memory device capable of storing multi-value data in each memory cell. Nippon Steel Corporation, Pollock Vande Sande & Priddy, May 2, 1995: US05412601 (152 worldwide citation)

An electrically erasable non-volatile semiconductor memory device comprising a plurality of row lines and column lines, a plurality of memory cells connected in a matrix to the plurality of row lines and column lines, a selection circuit for selecting a desired one of the plurality of memory cells, ...


3
Yoshifumi Sakai, Yoshitaka Ikeda: Method and apparatus for recognizing hand-written characters using a weighting dictionary. Nippon Steel Corporation, Law Offices Pollock Vande Sande & Priddy, September 22, 1998: US05812697 (149 worldwide citation)

A method of recognizing handwritten characters. A recognition dictionary is prepared including a plurality of characters and corresponding character clusters. A weighting dictionary is prepared including weighting clusters and corresponding object characters. All segmentation position candidates are ...


4
Yugo Tomioka, Shoichi Iwasa, Yasuo Sato, Toshio Wada, Kenji Anzai: Electrically alterable n-bit per cell non-volatile memory with reference cells. Nippon Steel Corporation, Pollock Vande Sande & Priddy, January 21, 1997: US05596527 (120 worldwide citation)

An electrically alterable non-volatile memory having a memory cell array including a plurality of memory cells, each memory cell including a transistor having a selected one of a plurality of different threshold voltages; a reference cell array including at least one set of reference cells, each ref ...


5
Katutoshi Ina, Kazuo Yamamoto, Hirokichi Higashiyama, Norio Ishikawa, Hiroshi Miyoshi: High tensile steel and process for producing the same. Nippon Steel Corporation, Wenderoth Lind & Ponack, October 4, 1983: US04407681 (111 worldwide citation)

A high tensile steel which has a satisfactory yield strength of 60 kg/mm.sup.2 or more and excellent resistances to sulfide corrosive cracking and corrosion, and which comprises, as indispensable components, 0.05 to 0.50 wt % of C, 0.1 to 1.0 wt % of Si, 0.1 to 2.0 wt % of Mn, 0.05 to 1.50 wt % of C ...


6
Tsuyoshi Masumoto, Masaaki Naka: Iron-chromium series amorphous alloys. The Research Institute for Iron Steel and Other Metals of the Tohoku University, Nippon Steel Corporation, Sughrue Rothwell Mion Zinn and Macpeak, October 19, 1976: US03986867 (105 worldwide citation)

Iron-chromium series amorphous alloys having excellent mechanical properties, high heat resistance and corrosion resistance consisting essentially of 1-40 atomic % of chromium, 7-35 atomic % of at least one of carbon, boron and phosphorus and the remainder being iron. In said amorphous alloys, a par ...


7
Masao Nakano, Keiichi Mori, Yoshitaka Hiraiwa, Shoji Iizuka, Shozo Shima, Yukio Nakamura: Apparatus for continuously measuring temperature of molten metal and method for making same. Kawaso Electric Industrial, Kurosaki Refractories, Nippon Steel Corporation, Sixbey Friedman Leedom & Ferguson, January 15, 1991: US04984904 (103 worldwide citation)

An apparatus for continuously measuring temperatures of molten metal including a thermocouple unit (A) and an immersion protection tube unit (B), wherein the thermocouple unit (A) comprises a thermocouple (1) having an end equipped with a temperature sensing element (8) and an opposite end connected ...


8
Toshio Wada, Kenji Anzai, Shoichi Iwasa, Yasuo Sato, Yuichi Egawa: Non-volatile semiconductor memory cell capable of storing more than two different data and method of using the same. Nippon Steel Corporation, Pollock Vande Sande & Priddy, June 13, 1995: US05424978 (100 worldwide citation)

A non-volatile semiconductor memory device capable of selectively storing one of at least three different data comprises a memory array including a plurality of memory cells, each having a control gate, a floating gate, a drain, and a source, a circuit for producing a stepped voltage whose level is ...


9
Yuichi Egawa, Toshio Wada, Shoichi Iwasa: MOS-type semiconductor device and method of making the same. Nippon Steel Corporation, Pollock Vande Sande & Priddy, July 25, 1995: US05436481 (96 worldwide citation)

A MOS semiconductor device and a method of making the same are arranged to include a semiconductor substrate of a first conductivity type; a pair of impurity diffused layers of a second conductivity type different from the first conductivity type formed in the semiconductor substrate and mutually se ...


10
Masanori Nakamura, Hiroshi Hirakouchi, Takeshi Yatsuka, Nobuo Kadowaki, Hiroshi Endoh: Viscoelastic resin composition for vibration-damping material. Toyo Boseki Kabushiki Kaisha, Nippon Steel Corporation, Wegner Cantor Mueller & Player, February 2, 1993: US05183863 (92 worldwide citation)

Disclosed herein is a viscoelastic resin composition for vibration-damping material which comprises (A) at least one amorphous polyester resin of low specific gravity in which more than 40 mol % of the dibasic acid moiety is of aromatic type, (B) at least one amorphous polyester resin of high specif ...