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Karube Isao, Mcneil Vincent M, Murakami Toru C O Nec Corporat: A process for immobilizing an enzyme on an electrode surface.. Nippon Electric Co, May 16, 1990: EP0368209-A1 (220 worldwide citation)

A process for immobilizing an enzyme on an electrode surface is provided. The process comprises steps of: (a) electroplating the electrode surface, and (b) immobilizing thereon the enzyme and a mediator of electron transfer by means of an electropolymerzing substance. The enzyme immobilized electrod ...


2
Oura Toshio: Sound synthesizer.. Nippon Electric Co, June 17, 1981: EP0030390-A1 (149 worldwide citation)

A sound synthesizer comprises memory means for storing an envelope information sampled from an envelope waveform of a sound signal and a sound wave information sampled from a sound signal waveform, means for generating a pitch information which determines the pitch of the sound signal, and means for ...


3
Tanabe Kosuke: Lens antenna. Nippon Electric Co, October 14, 1998: EP0871241-A2 (139 worldwide citation)

A lens antenna having high antenna efficiency, low sidelobe levels, and that is easily assembled. The lens antenna includes a first horn made of a metallic conductor, a second horn made of a high-frequency absorbing plastic material, and a lens for controlling the power distribution at an aperature ...


4
Yoshino Akira: Soi-type semiconductor device with suppressed spread of depletion region. Nippon Electric Co, January 31, 1996: EP0694977-A2 (135 worldwide citation)

In a semiconductor device including a semiconductor substrate (1, 1'), an insulating layer (2) formed on the semiconductor substrate and a semiconductor layer (3) formed on the insulating layer, the impurity concentration of at least one part of the semiconductor substrate in the proximity of the in ...


5
Tanigawa Takaho: Semiconductor memory device having peripheral circuit and interface circuit fabricated on bulk region out of silicon-on-insulator region for memory cells. Nippon Electric Co, August 14, 1996: EP0726601-A1 (120 worldwide citation)

A semiconductor dynamic random access memory device has a memory cell array (31) fabricated on a silicon-on-insulator region (30a) and peripheral and interface circuits (32/33) fabricated on a bulk region (30b); even if the circuit components of the peripheral circuit (32) are increased together wit ...


6
Saeki Takanori: Semiconductor memory device and method for manufacturing thereof. Nippon Electric Co, August 12, 1998: EP0858109-A2 (119 worldwide citation)

A semiconductor device in which the number of steps intrinsic to a memory cell is reduced to as small a value as possible to realize reduction in cell size and invulnerability against software error. A gate oxide film 306 and a capacitance insulating film 310 are formed by one and the same oxide fil ...


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Multiplex communication system. Mainichi Broadcasting System, Nippon Electric Co, September 3, 1970: GB1204190-A (114 worldwide citation)

1,204,190. Multiplex pulse signalling. MAINICHI BROADCASTING SYSTEM and NIPPON ELECTRIC CO. Ltd. 22 Dec., 1967 [26 Dec., 1966], No. 58533/67. Heading H4L. Means are provided for transmitting a signal A, e.g. a facsimile signal, in repetitive gaps in a signal B, e.g. a television signal. As described ...


9
Tsujimoto Ichiro: Method and apparatus for eliminating interference using transmission delay and code multiplexing in digital radio system. Nippon Electric Co, July 2, 1997: EP0782275-A2 (106 worldwide citation)

At a transmitter side, signals are providcd with a delay difference with a plurality of branches, coded multiplexed by spectrum spreaders and a combination unit, and transmitted by single antenna. At a receiver side, the signals are received by a single antenna, and diversity branches are extracted ...


10
Katayama Ryuichi: Optical head apparatus for different types of disks. Nippon Electric Co, December 11, 1996: EP0747893-A2 (101 worldwide citation)

In an optical head apparatus for two or more different types of discs (A, A', B), there are provided a first light source (11) for a first wavelength light beam, a second light source (12) for a second wavelength light beam, and an objective lens (6, 6', 6'') for leading the first and second wavelen ...