1
Kun A Kang, Hyung J Park, J H Lee: Semiconductor package and method for making the same. National Science Council, Jiawei Huang, J C Patents, March 12, 2002: US06355502 (194 worldwide citation)

A method for making a semiconductor package firstly provides a lead frame having a first surface and a corresponding second surface. The lead frame includes at least a package unit that further includes a die pad, and a plurality of leads disposed on the periphery of the die pad where each of the le ...


2
Lin S Lee: Mandarin speech input method for Chinese computers and a mandarin speech recognition machine. National Science Council, Cushman Darby & Cushman, June 15, 1993: US05220639 (164 worldwide citation)

A method of inputting Chinese characters into a computer directly from Mandarin speech which recognizes a series of monosyllables by separately recognizing syllables and Mandarin tones and assembling the recognized parts to recognize the mono-syllable using Hidden Markov Models. The recognized mono- ...


3
Horng Chih Lin, Liang Po Chen, Hsiao Yi Lin, Chun Yen Chang: Method for fabricating thin-film transistor with bottom-gate or dual-gate configuration. National Science Council, Fish & Richardson P C, August 19, 1997: US05658806 (98 worldwide citation)

A method for fabricating a self-aligned thin-film transistor, in accordance with the present invention, first involves forming a gate electrode on an insulating layer. Next, a gate dielectric layer is formed to enclose the gate electrode. Subsequently, a semiconductor layer, a conducting layer, and ...


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Shih Jun Yuan, Jing Tang Yang, Jer Liang Yeh, Chih Sheng Yu, Yi Chiuen Hu, Chien Jen Chen: Electrowetting electrode device with electromagnetic field for actuation of magnetic-bead biochemical detection system. National Tsing Hua University, Precision Instrument Development Center of National Science Council, Alston & Bird, March 13, 2007: US07189359 (68 worldwide citation)

A detecting device for biochemical detections is provided. The detecting device includes a first substrate, a magnetic layer located on the first substrate, an isolation layer located on the magnetic layer, at least a first electrode located on the isolation layer, a first dielectric layer located o ...


6
Jow Lay Huang, Kuo Chi Twu, Jiunn Jye Huang: Manufacture of complex shaped Cr.sub.3 C.sub.2 /Al.sub.2 O.sub.3 components by injection molding technique. National Science Council, Smith Gambrell & Russell, November 30, 1999: US05993726 (64 worldwide citation)

The purpose of this invention is to manufacture complex shaped Cr.sub.3 C.sub.2 /Al.sub.2 O.sub.3 components efficiently with effective cost. Chromium carbide, which is quite chemically inert at elevated temperature, is added into an alumina matrix for toughening purposes. Chromium carbide and alumi ...


7
Hwahsing Tang: Method for rapid forming of a ceramic work piece. National Science Council, Fish & Richardson P C, April 17, 2001: US06217816 (63 worldwide citation)

An inorganic binder and a dissolving agent are put into ceramic powder. They are mixed to form a plastic green mixture. Then the said mixture is formed into a thin green layer. Preferably, this thin green layer will be preheated and dried such that the thin green layer will be hardened due to the bo ...


8
Jung Ho Cheng: Structure for golf club head and the method of its manufacture. National Science Council, Beveridge DeGrandi Weilacher & Young L, July 1, 1997: US05643108 (62 worldwide citation)

A new structure for a golf club head which is lighter yet with lower impact loss and featuring internal reinforcements is designed according to research results from impact mechanics. The impact capability of the golf club head can be improved by placing the reinforcement structures close to the str ...


9
Horng Chih Lin, Tiao Yuan Huang: Structure and method for manufacturing improved FETs having T-shaped gates. National Science Council, Townsend and Townsend and Crew, July 21, 1998: US05783479 (61 worldwide citation)

A structure and method for manufacturing improved FETs having T-shaped gates can reduce the parasitic resistance of the gate and source/drain of an FET. In the improved FETs having T-shaped gates formed according to the invention, since a buffer layer under spacers comprises a gate oxide layer and a ...


10
Chun Yen Chang, Tan Fu Lei, Hsiao Yi Lin, Juing Yi Cheng: Method to fabricate the thin film transistor. National Science Council, Beveridge DeGrandi Weilacher & Young L, August 24, 1999: US05943560 (58 worldwide citation)

Ultrahigh vacuum chemical vapor deposition (UHV/CVD) and chemical mechanical polishing (CMP) systems are used in a method which can fabricate polycrystalline silicon (poly-Si) and polycrystalline silicon-germanium (poly-Si.sub.1-x -Ge.sub.x) thin film transistors at low temperature and low thermal b ...