1
Farzad Tabrizi, Barry Kitazumi, David A Barker, David A Setton, Leszek Niewmierzycki, Michael J Kuhlman: Systems and methods for robotic transfer of workpieces between a storage area and a processing chamber. Mattson Technology, Wilson Sonsini Goodrich & Rosati, November 13, 2001: US06315512 (139 worldwide citation)

A workpiece handling system with dual load locks, a transport chamber and a process chamber. Workpieces may be retrieved from one load lock for processing at vacuum pressure, while workpieces are unloaded from the other load lock at the pressure of the surrounding envirornment. The transport chamber ...


2
Kristian E Johnsgard, Brad S Mattson, James McDiarmid, Vladimir J Zeitlin: System and method for thermal processing of a semiconductor substrate. Mattson Technology, Wilson Sonsini Goodrich & Rosati, January 9, 2001: US06172337 (98 worldwide citation)

A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the ...


3
Stephen E Savas, Brad S Mattson: Inductive plasma reactor. Mattson Technology, Wilson Sonsini Goodrich & Rosati, September 22, 1998: US05811022 (79 worldwide citation)

A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the reactor chamber causing a plasma to form. A spli ...


4
Stephen E Savas, John Zajac, Robert Guerra, Wolfgang Helle: Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing. Mattson Technology, Wilson Sonsini Goodrich & Rosati, October 19, 2004: US06805139 (68 worldwide citation)

Plasma systems and methods for supplying activation energy to remove cross-linked photoresist crust using ion bombardment of the substrate from a plasma, at reduced temperature, achieved in part by operating the processing chamber at low pressures. Reduced temperatures prevent “popping” of the photo ...


5
Jane Chang, You Sheng Lin, Avishai Kepten, Michael Sendler, Sagy Levy, Robin Bloom: Method for depositing a coating having a relatively high dielectric constant onto a substrate. Mattson Technology, The Regents of the University of California, Dority & Manning P A, April 26, 2005: US06884719 (67 worldwide citation)

A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. The substrate is subjected to one or more reaction cycles. For instance, in a typical reaction cycle, the substrate is heated to a certain deposition temperature. Thereafter, in one embo ...


6
Kristian E Johnsgard, James McDiarmid: Thermal processing system with supplemental resistive heater and shielded optical pyrometry. Mattson Technology, Wilson Sonsini Goodrich & Rosati, November 3, 1998: US05830277 (65 worldwide citation)

System and method for determining thermal characteristics, such as temperature, temperature uniformity and emissivity, during thermal processing using shielded pyrometry. The surface of a semiconductor substrate is shielded to prevent interference from extrinsic light from radiant heating sources an ...


7
Kristian E Johnsgard, James McDiarmid: Thermal processing system with supplemental resistive heater and shielded optical pyrometry. Mattson Technology, Wilson Sonsini Goodrich & Rosati, March 13, 2001: US06200634 (64 worldwide citation)

System and method for determining thermal characteristics, such as temperature, temperature uniformity and emissivity, during thermal processing using shielded pyrometry. The surface of a semiconductor substrate is shielded to prevent interference from extrinsic light from radiant heating sources an ...


8
Paul J Timans, Narasimha Acharya: Pulsed processing semiconductor heating methods using combinations of heating sources. Mattson Technology, Michael Pritzkau, February 1, 2005: US06849831 (62 worldwide citation)

Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to ...


9
Stephen E Savas: Low frequency inductive RF plasma reactor. Mattson Technology, Wilson Sonsini Goodrich & Rosati, July 9, 1996: US05534231 (60 worldwide citation)

A plasma reactor with rf power inductively coupled into the reactor chamber to produce an rf magnetic field substantially perpendicular to a pedestal on which a wafer is placed for processing. Said pedestal is a powered electrode to which power is coupled to control the sheath voltage of the pedesta ...


10
Sagy Levy, Robin S Bloom, Avashai Kepten: Method of forming dielectric films. Mattson Technology, Dority & Manning P A, October 28, 2003: US06638876 (47 worldwide citation)

A method for depositing a high-k dielectric coating onto a substrate, such as a semiconductor wafer, is provided. In one embodiment, the process is directed to forming a nitride layer on a substrate. In an alternative embodiment, the present invention is directed to forming a metal oxide or silicate ...