1
Tadatomo Suga: Interconnect structure for stacked semiconductor device. Oki Electric, Sanyo Electric, Sony Corporation, Kabushiki Kaisha Toshiba, NEC Corporation, Sharp Kabushiki Kaisha, Hitachi, Fujitsu, Matsushita Electronics Corporation, Mitsubishi Denki Kabushiki Kaisha, Rohm, Sonnenschein Nath & Rosenthal, October 15, 2002: US06465892 (285 worldwide citation)

In a multi-layer interconnection structure, the wiring length is to be reduced, and the interconnection is to be straightened, at the same time as measures need to be taken against radiation noise. To this end, there is disclosed a semiconductor device in which plural semiconductor substrates, each ...


2
Tadatomo Suga: Method for manufacturing an interconnect structure for stacked semiconductor device. Oki Electric, Sanyo Electric, Sony Corporation, Kabushiki Kaisha Toshiba, NEC Corporation, Sharp Kabushiki Kaisha, Hitachi, Fujitsu, Matsushita Electronics Corporation, Mitsubishi Denki Kabushiki Kaisha, Rohm, Sonnenschein Nath & Rosenthal, October 29, 2002: US06472293 (267 worldwide citation)

In a multi-layer interconnection structure, the wiring length is to be reduced, and the interconnection is to be straightened, at the same time as measures need to be taken against radiation noise. To this end, there is disclosed a semiconductor device in which plural semiconductor substrates, each ...


3
Masanori Minamio, Kunikazu Takemura, Yuichiro Yamada, Fumito Ito, Takahiro Matsuo: Leadframe for use in manufacturing a resin-molded semiconductor device. Matsushita Electronics Corporation, Eric J Robinson, Nixon Peabody, March 27, 2001: US06208020 (246 worldwide citation)

A resin-molded semiconductor device includes: signal leads; a die pad with a central portion elevated above a peripheral portion thereof; support leads, each including a raised portion higher in level than the other portions; and DB paste for use in die bonding. All of these members are encapsulated ...


4
Masao Nakayama, Katsushi Tara, Isamu Yuasa, Toshio Fujiwara, Kaoru Muramatsu, Noboru Yoshida: Lead frame for use with an RF powered semiconductor. Matsushita Electronics Corporation, McDermott Will & Emery, March 27, 2001: US06208023 (185 worldwide citation)

The semiconductor device of the invention includes: a square die pad, to which a semiconductor chip is adhered via a silver paste member or the like; first leads, the inner end of each of the first leads being formed continuously and integrally with an associated shorter side of the die pad; and a p ...


5
Yukio Yamaguchi, Akira Oga, Toru Nomura, Masanori Minamio: Lead frame, method of manufacturing lead frame, semiconductor device and method of manufacturing semiconductor device. Matsushita Electronics Corporation, McDermott Will & Emery, May 1, 2001: US06225146 (182 worldwide citation)

In a lead frame, inside inner leads are supported by supporting leads through an insulator. The inside inner leads and outside inner leads are separated from one another and are doubly arranged. In manufacturing a semiconductor device by using this lead frame, a semiconductor chip is mounted on the ...


6
Yukio Yamaguchi: Resin encapsulated semiconductor device having a reduced thickness and improved reliability. Matsushita Electronics Corporation, McDermott Will & Emery, June 27, 2000: US06081029 (166 worldwide citation)

A lead frame including signal-connecting leads, a die pad and support leads is provided. A semiconductor chip is bonded to the die pad with an adhesive. The semiconductor chip, electrode pads and the signal-connecting leads are electrically connected to each other with metal fine wires. And these me ...


7
Hirofumi Takata, Tadashi Tanida: Electronic component, method for making the same, and lead frame and mold assembly for use therein. Matsushita Electronics Corporation, McDermott WIll & Emery, November 2, 1999: US05977613 (149 worldwide citation)

A lead has a thick part having a thickness of 0.2 mm and a thin part having a thickness of 0.1 mm. The thin part is formed having a greater width than the thick part for preventing the lead from slipping from a resin. A semiconductor chip is fixed on the thin part using a conductive adhesive. A late ...


8
Ichiro Okumura, Masanori Minamio, Akio Kuito, Takeshi Morikawa, Toshiyuki Fukuda, Fumito Itoh: Plastic encapsulated semiconductor device and method of manufacturing the same. Matsushita Electronics Corporation, McDermott Will & Emery, August 24, 1999: US05942794 (146 worldwide citation)

A plastic encapsulated semiconductor device comprises a die pad, die pad support pins suspending the die pad, a semiconductor chip mounted on the die pad, thin metal wires for connecting the electrode of the semiconductor chip to leads, and a sealing resin sealing the foregoing components, while the ...


9
Kazuo Miyatsuji, Daisuke Ueda: Semiconductor integrated circuit. Matsushita Electronics Corporation, McDermott Will & Emery, May 11, 1999: US05903178 (139 worldwide citation)

A drain and a source of a field-effect transistor are connected to first and second signal terminals, respectively. A first control terminal is connected to a gate. A first resistor is interposed between the gate and the first control terminal. Capacitors are interposed between the source/drain and ...


10
Ichiro Okumura, Masanori Minamio, Akio Kuito, Takeshi Morikawa, Toshiyuki Fukuda, Fumito Itoh: Plastic encapsulated semiconductor device and method of manufacturing the same. Matsushita Electronics Corporation, McDermott Will & Emery, October 10, 2000: US06130115 (138 worldwide citation)

A plastic encapsulated semiconductor device comprises a die pad, die pad support pins suspending the die pad, a semiconductor chip mounted on the die pad, thin metal wires for connecting the electrode of the semiconductor chip to leads, and a sealing resin sealing the foregoing components, while the ...