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BACHRACH Robert Z, WANG Connie P, LOPATIN Sergey D, BOLANDI Hooman, BABAYANTS Ruben, BROWN Karl M, KUTNEY Michael C, OLGADO Donald J K: MODULE DE DÉPÔT PAR PULVÉRISATION POUR UN SYSTÈME DE TRAITEMENT EN LIGNE, SPRAY DEPOSITION MODULE FOR AN IN-LINE PROCESSING SYSTEM. Applied Materials, BACHRACH Robert Z, WANG Connie P, LOPATIN Sergey D, BOLANDI Hooman, BABAYANTS Ruben, BROWN Karl M, KUTNEY Michael C, OLGADO Donald J K, PATTERSON B Todd, March 22, 2012: WO/2012/036908 (2 worldwide citation)

In one embodiment, an apparatus for simultaneously depositing an anodically or cathodically active material on opposing sides of a flexible conductive substrate is provided. The apparatus comprises a chamber body defining one or more processing regions in which a flexible conductive substrate is exp ...


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Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V: Polymer memory device formed in via opening. Advanced Micro Devices, Tripsas Nicholas H, Buynoski Matthew, Pangrle Suzette K, Okoroanyanwu Uzodinma, Hui Angela T, Lyons Christopher F, Subramanian Ramkumar, Lopatin Sergey D, Ngo Minh Van, Khathuria Ashok M, Chang Mark S, Cheung Patrick K, Oglesby Jane V, sCOLLOPY Daniel R, February 3, 2005: WO/2005/010892

One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one ...


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Lyons Christopher F, Chang Mark S, Lopatin Sergey D, Subramanian Ramkumar, Cheung Patrick, Ngo Minh Van, Oglesby Jane V: Sidewall formation for high density polymer memory element array. Advanced Micro Devices, Lyons Christopher F, Chang Mark S, Lopatin Sergey D, Subramanian Ramkumar, Cheung Patrick, Ngo Minh Van, Oglesby Jane V, sDRAKE Paul S, May 19, 2005: WO/2005/045935

Systems and methodologies are disclosed for increasing the number of memory cells associated with a lithographic feature. The systems comprise memory elements that are formed on the sidewalls of the lithographic feature by employing various depositing and etching processes. The side wall memory cell ...


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LOPATIN Sergey D, BREVNOV Dimitri, LIU Eric H, BACHRACH Robert Z, WANG Connie P: FABRICATION DANODES EN ALLIAGE DE LITHIUM-ION PRISMATIQUES À GRANDE CAPACITÉ, MANUFACTURING OF HIGH CAPACITY PRISMATIC LITHIUM-ION ALLOY ANODES. Applied Materials, LOPATIN Sergey D, BREVNOV Dimitri, LIU Eric H, BACHRACH Robert Z, WANG Connie P, PATTERSON B Todd, September 7, 2012: WO/2012/118840

High capacity energy storage devices and energy storage device components, and more specifically, to a system and method for fabricating such high capacity energy storage devices and storage device components using processes that form three-dimensional porous structures are provided. In one embodime ...


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YANG Lu, HOOG Joseph T, WANG Miaojun, ZENG Dongli, BACHRACH Robert Z, BOLANDI Hooman, LOPATIN Sergey D: [fr] PROCÉDÉS ET APPAREIL DE SYNTHÈSE DE PARTICULES, [en] PARTICLE SYNTHESIS APPARATUS AND METHODS. YANG Lu, HOOG Joseph T, WANG Miaojun, ZENG Dongli, BACHRACH Robert Z, BOLANDI Hooman, LOPATIN Sergey D, Applied Materials, PATTERSON B Todd, February 21, 2013: WO/2013/025505

[en] Apparatus and methods of forming a battery-active material are described. An apparatus includes a first processing section that raises the temperature of a precursor material to a reaction threshold temperature, a second processing section that converts the precursor material to a battery-activ ...



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