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Lee Thomas H: Tendon stripper. Lee Thomas H, WILLIS Ryan L, November 9, 2006: WO/2006/119238 (1 worldwide citation)

The invention includes a tissue eviscerator comprising: (a) a frame including a repositionable cutter to sever bodily tissue; (b) a handle mounted to the frame and operative to reposition the frame with respect to the bodily tissue; and (c) an actuator in communication with the cutter and operative ...


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Lee Thomas H, Palladino Michael, Kleveland Bendik, Malekal Vinay: Wireless access point device. Zerog Wireless, Lee Thomas H, Palladino Michael, Kleveland Bendik, Malekal Vinay, MUELLER Heatheret al, August 27, 2009: WO/2009/105721 (1 worldwide citation)

A wireless (such as Wi-Fi or similar) access point is included in or attached to a device, such as a cellular phone, WiMAX device, other mobile device, etc. One or more wireless units wirelessly access a communication network (and in some cases the Internet) through the wireless access point device. ...


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Johnson Mark G, Lee Thomas H, Subramanian Vivek, Farmwald P Michael, Cleeves James M: Vertically stacked field programmable nonvolatile memory and method of fabrication. Matrix Semiconductor, Johnson Mark G, Lee Thomas H, Subramanian Vivek, Farmwald P Michael, Cleeves James M, TAYLOR Edwin H, May 25, 2000: WO/2000/030118

A very high density field programmable memory is disclosed. An array is formed vertically above a substrate using several layers (51a1, 51a2, 51b2), each layer (51a1) of which includes vertically fabricated memory cells. The cell in an N level array may be formed with N+1 masking steps plus masking ...


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Salter Eric J, Deherrera Mark F, Lee Thomas H: Multi-layer source/drain stressor. Freescale Semiconductor, Salter Eric J, Deherrera Mark F, Lee Thomas H, KING Robert L, August 28, 2008: WO/2008/103517

A method for forming a semiconductor device (10) includes forming a recess (26) in a source region and a recess (28) in a drain region of the semiconductor device. The method further includes forming a first semiconductor material layer (32) in the recess (26) in the source region and a second semic ...