1
McDonald Robinson, Richard C Westhoff, Charles E Hunt, Li Ling: Silicon-germanium-carbon compositions in selective etch processes. Lawrence Semiconductor Research Laboratory, Wilson Sonsini Goodrich & Rosati, May 25, 1999: US05906708 (91 worldwide citation)

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, t ...


2
McDonald Robinson, Richard C Westhoff, Charles E Hunt, Li Ling, Ziv Atzmon: Silicon-germanium-carbon compositions and processes thereof. Lawrence Semiconductor Research Laboratory, The Regents of the University of California, The Arizona Board of Regents, Robert Moll, May 16, 2000: US06064081 (71 worldwide citation)

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, t ...


3
Robinson Mcdonald, Westhoff Richard C, Hunt Charles E, Ling Li, Atzmon Ziv: Compositions silicium-germanium-carbone et processus associes, Silicon-germanium-carbon compositions and processes thereof. Lawrence Semiconductor Research Laboratory, The Regents Of The University Of California, Atzmon Ziv, The Regents Of The University Of California, Lawrence Semiconductor Research Laboratory, Arizona Board Of Regents For And On Behalf Of Arizona State University, OYEN WIGGS GREEN & MUTALA, May 23, 1996: CA2204394

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si-Ge-C), methods for growing Si-Ge-C epitaxial layer(s) on a substrate, etchants especially suitable for Si-Ge-C etch-stops, and novel methods of use for Si-Ge-C compositions are provided. In particular, the inven ...


4
Robinson Mcdonald, Westhoff Richard C, Hunt Charles E, Ling Li, Atzmon Ziv: Silicon-germanium-carbon compositions and processes thereof. Lawrence Semiconductor Research Laboratory, MOLL Robert, May 23, 1996: WO/1996/015550

Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e. Si-Ge-C), methods for growing Si-Ge-C epitaxial layers(s) (42) on a substrate (32), etchants especially suitable for Si-Ge-C etch-stops (42), and novel method of use for Si-Ge-C compositions are provided. In particu ...



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