1
Thomas Jakobs, Wayne D Jung, Richard A Karlin, Leonard Reiffel, Raphael K Tam, Timothy T Tutt, Michael F Dunk: Image processing apparatus having common and personal memory and capable of viewing and editing an image commonly with a remote image processing apparatus over a network. L G Semicon, Loudermilk & Associates, April 6, 1999: US05892509 (74 worldwide citation)

An image processing apparatus coupling at least two image processing systems connected to a network. The network couples image information to each system, and each system displays at least one image. Each system includes a communication unit and a control unit. The communication unit couples informa ...


2
Jong Hoon Park, Young Keun Choi: Reference voltage generating circuit having a power conserving start-up circuit. L G Semicon, Alan R Loudermilk, October 15, 1996: US05565811 (23 worldwide citation)

A power conserving circuit is disclosed which has a start-up circuit for initiating operation of a reference voltage generator. Included are a sensing circuit for producing a pulse signal in response to initial application of an external power source; a reference voltage generator for producing a co ...


3
Jeong S Byun, Hak N Kim: Method for forming TiN film and TiN film/thin TiSi.sub.2 film, and method for fabricating semiconductor element utilizing the same. L G Semicon, Alan R Loudermilk, January 28, 1997: US05597745 (8 worldwide citation)

A method for forming a fine-textured titanium nitride film and fine-textured titanium nitride/thin titanium silicide films, and methods for fabricating semiconductor elements utilizing the same are disclosed. A thin titanium silicide film and a fine-textured nitride film are formed on a semiconducto ...


4
Seen Suk Kang: Method for fabricating a semiconductor device. L G Semicon, Finnegan Henderson Farabow Garrett & Dunner L, May 22, 2001: US06235570 (8 worldwide citation)

A semiconductor device is disclosed including a first insulating film having a contact hole and being formed on a substrate. A first impurity region is formed in the active layer on the bottom of the contact hole, and a second impurity region is formed in the active layer on the first insulating fil ...


5
Hyun Sang Hwang: Method of manufacturing a MOSFET by forming a single oxide layer doping with either an oxide accelerator or an oxide inhibitor producing asymmetric thickness. L G Semicon, Finnegan Henderson Farabow Garrett & Dunner L, July 11, 2000: US06087237 (7 worldwide citation)

A thick oxide layer is formed over a drain region of an MOS transistor while a thin oxide layer is provided over the source and channel regions. As a result both improved current driving ability and reduced gate induced drain leakage current are achieved.


6
Ki Yeoung Lee: Microwave heating apparatus for reducing high-frequency in an electric power circuit. L G Semicon, June 17, 1997: US05639395 (1 worldwide citation)

A microwave heating apparatus is disclosed. The microwave heating apparatus includes: a rectifying section for rectifying an AC current; an inverting section for being turned on/off by the driving signals of a driving section to generate high frequency voltages corresponding to the output signals of ...


7
Keun Woung Lee: Apparatus for removing bubbles in filter housing of coating equipment. L G Semicon, Morgan Lewis and Bockius, January 27, 1998: US05711876 (1 worldwide citation)

An apparatus for removing bubbles in a filter housing of a coating equipment includes a cover coupled to the filter housing and including a bottom, an inlet portion, an outlet portion, and a drain portion, the bottom of the cover having an inclined surface at an angle, wherein the drain portion is a ...