1
Yiping Xu, Ibrahim Abdulhalim: Spectroscopic scatterometer system. KLA Tencor Technologies Corporation, James S Hsue, Skjerven Morrill, November 19, 2002: US06483580 (152 worldwide citation)

Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then use ...


2
Akella V S Satya, Li Song, Robert Thomas Long, Kurt H Weiner: Methods and systems for predicting IC chip yield. KLA Tencor Technologies Corporation, Beyer Weaver & Thomas, June 15, 2004: US06751519 (146 worldwide citation)

Disclosed are methods and apparatus for efficiently managing IC chip yield learning. In general terms, as each wafer lot moves through fabrication, yield information is obtained from each set of test structures for a particular process or defect mechanism. The nature of the yield information is such ...


3
Walter Dean Mieher, Ady Levy: Overlay alignment measurement mark. KLA Tencor Technologies Corporation, Beyer Weaver & Thomas, November 26, 2002: US06486954 (87 worldwide citation)

An alignment mark comprising a first test zone and a second test zone for measuring the relative position between different layers of a semiconductor device. The alignment mark is used to determine the overlay error between layers of a semiconductor wafer while minimizing measurement inaccuracies ca ...


4
Joel L Seligson, Mark Ghinovker, John Robinson, Pavel Izikson, Michael E Adel, Boris Simkin, David Tulipman: Use of overlay diagnostics for enhanced automatic process control. KLA Tencor Technologies Corporation, Beyer Weaver & Thomas, August 9, 2005: US06928628 (72 worldwide citation)

Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from th ...


5
Kurt H Weiner, Gaurav Verma, Indranil De: Apparatus and methods for detection of systematic defects. KLA Tencor Technologies Corporation, Beyer Weaver, October 9, 2007: US07280945 (70 worldwide citation)

Disclosed are mechanisms are provided for determining whether a particular integrated circuit (IC) pattern is susceptible to systematic failure, e.g., due to process fluctuations. In one embodiment, final resist patterns for such IC pattern are simulated using a sparse type simulator under various p ...


6
Kurt H Weiner, Gaurav Verma, Peter D Nunan, Indranil De: Apparatus and methods for determining and localization of failures in test structures using voltage contrast. KLA Tencor Technologies Corporation, Beyer Weaver & Thomas, March 1, 2005: US06861666 (67 worldwide citation)

Disclosed is test structure that can be fabricated with minimal photolithography masking steps and in which defects may be localized to specific layers. Mechanisms for fabricating such test structures are also provided. In one embodiment, a semiconductor test structure suitable for a voltage contras ...


7
Mehdi Vaez Iravani, Jeffrey Alan Rzepiela, Carl Treadwell, Andrew Zeng, Robert Fiordalice: Defect detection system. Kla Tencor Technologies Corporation, James S Hsue, Skjerven Morrill, March 25, 2003: US06538730 (66 worldwide citation)

Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal posit ...


8
Akella V S Satya, Vladimir D Federov, Li Song: Apparatus and methods for determining critical area of semiconductor design data. KLA Tencor Technologies Corporation, Beyer Weaver & Thomas, September 20, 2005: US06948141 (63 worldwide citation)

Disclosed are mechanisms for efficiently and accurately calculating critical area. In general terms, a method of determining a critical area for a semiconductor design layout is disclosed. The critical area is utilizable to predict yield of a semiconductor device fabricated from such layout. A semic ...


9
Gustavo A Pinto, Brian C Leslie, David L Adler, Akella V S Satya, Padma A Satya legal representative, Robert Thomas Long, David J Walker: Multiple directional scans of test structures on semiconductor integrated circuits. KLA Tencor Technologies Corporation, Weaver Austin Villeneuve & Sampson, February 2, 2010: US07656170 (58 worldwide citation)

Disclosed is a method of inspecting a sample. The sample is scanned in a first direction with at least one particle beam. The sample is scanned in a second direction with at least one particle beam. The second direction is at an angle to the first direction. The number of defects per an area of the ...


10
David L Adler: Multi-pixel electron emission die-to-die inspection. KLA Tencor Technologies Corporation, Okamoto & Benedicto, May 24, 2005: US06897444 (56 worldwide citation)

One embodiment disclosed is a method of detecting defects in objects. A selected surface area of an object is inspected with a multi-pixel electron microscope, and first set of data is generated having signal values representing image content of each pixel thereof. Further selected surface area of t ...



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