1
Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kazushige Ueda, Masahiro Hirano, Toshio Kamiya: Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film. Japan Science and Technology Agency, Weterman Hattori Daniels & Adrian, June 13, 2006: US07061014 (2805 worldwide citation)

Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a Zn ...


2
Masashi Kawasaki, Hideo Ohno: Transistor and semiconductor device. Japan Science and Technology Agency, Niefeld IP Law PC, June 20, 2006: US07064346 (2739 worldwide citation)

In an npn-type transistor, the emitter 42 and the collector 43 are formed of an n-type transparent semiconductor, and the base 41 is formed by a p-type transparent semiconductor. The base electrode 44, the emitter electrode 45 and the collector electrode 46 are formed respectively on the base 41, th ...


3
Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Masahiro Orita, Hidenori Hiramatsu, Kazushige Ueda: LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film. Japan Science and Technology Agency, Westerman Hattori Daniels & Adrian, January 29, 2008: US07323356 (2723 worldwide citation)

Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on ...


4
Bilge M Imer, James S Speck, Steven P DenBaars, Shuji Nakamura: Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD). The Regents of the University of California, Japan Science and Technology Agency, Gates & Cooper, March 4, 2008: US07338828 (141 worldwide citation)

A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). ...


5
Hosono Hideo, Hirano Masahiro, Ota Hiromichi, Kamiya Toshio, Nomura Kenji: (Ja) アモルファス酸化物及び薄膜トランジスタ, (En) Amorphous oxide and thin film transistor. Japan Science and Technology Agency, Hosono Hideo, Hirano Masahiro, Ota Hiromichi, Kamiya Toshio, Nomura Kenji, NISHI Yoshiyuki, September 22, 2005: WO/2005/088726 (139 worldwide citation)

(EN) An amorphous oxide and a thin film transistor using the amorphous oxide. More specifically, an amorphous oxide having an electron carrier concentration of less than 1018/cm3 and a thin film transistor using the amorphous oxide. The thin film transistor is provided with a source electrode (6), a ...


6
Susumu Noda, Takashi Asano, Bong Shik Song, Hitomichi Takano: Electromagnetic wave frequency filter. Japan Science and Technology Agency, Matsushita Electric Works, Edwards Angell Palmer & Dodge, January 22, 2008: US07321707 (117 worldwide citation)

In this electromagnetic wave frequency filter, an electromagnetic wave of a predetermined frequency matching a resonant frequency of a resonator 41 is transmitted from an input waveguide 2 to an output waveguide 3 through the resonator 41, and is outputted from a drop port P31. This filter has an in ...


7
John F Kaeding, Dong Seon Lee, Michael Iza, Troy J Baker, Hitoshi Sato, Benjamin A Haskell, James S Speck, Steven P DenBaars, Shuji Nakamura: Method for improved growth of semipolar (Al,In,Ga,B)N. The Regents of the University of California, Japan Science and Technology Agency, Gates & Cooper, April 6, 2010: US07691658 (114 worldwide citation)

A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/o ...


8
Keiichiro Kagawa, Yuki Maeda, Jun Ohta: Information-processing system using free-space optical communication and free-space optical communication system. Japan Science and Technology Agency, National University Corporation Nara Institute of Science and Technology, Oliff & Berridge, May 11, 2010: US07715723 (111 worldwide citation)

In a system for data communication between an information terminal to be operated by a user and remote communication nodes, the present invention intends to suppress the power consumption of the information terminal. For that purpose, communication nodes 2, 3 and 4 each emit diffuse light carrying a ...


9
Toshiro Higuchi, Toru Torii, Takashi Nishisako, Tomohiro Taniguchi: Process for producing emulsion and microcapsules and apparatus therefor. Japan Science and Technology Agency, Oblon Spivak McClelland Maier & Neustadt P C, September 11, 2007: US07268167 (106 worldwide citation)

A process and apparatus for rapidly producing an emulsion and microcapsules in a simple manner. A dispersion phase is ejected from a dispersion phase-feeding port toward a continuous phase flowing in a microchannel such that flows of the dispersion phase and the continuous phase cross each other, th ...


10
Masakatsu Hirasawa, Mikio Yamashita: Autonomous ultra-short optical pulse compression, phase compensating and waveform shaping device. Japan Science and Technology Agency, Westerman Hattori Daniels & Adrian, February 13, 2007: US07177027 (81 worldwide citation)

Disclosed is an apparatus for autonomously compressing, phase-compensating and waveform-shaping an ultrashort light pulse that is fast and high in sensitivity in compensating for phase fluctuations and allows the use of a usual laser light source that is low in light intensity and has large temporal ...