1
Francis J Kub, Victor Temple, Karl Hobart, John Neilson: Advanced methods for making semiconductor devices by low temperature direct bonding. Intersil Corporation, Allen Dyer Doppelt Milbrath & Gilchrist P A, November 28, 2000: US06153495 (229 worldwide citation)

A method for making a semiconductor device from a plurality of semiconductor substrates includes the steps of: processing at least one surface of at least one of the substrates; thinning at least one of the substrates; bonding the processed and thinned substrates together so that the at least one pr ...


2
John M S Neilson: High voltage mosfet structure. Intersil Corporation, Rogers & Killeen, June 27, 2000: US06081009 (128 worldwide citation)

A high voltage MOSFET with low on-resistance and a method of lowering the on-resistance for a specific device breakdown voltage of a high voltage MOSFET. The MOSFET includes a blocking layer of a first conductivity type having vertical sections of a second conductivity type or the blocking layer may ...


3
Christopher B Kocon, Jun Zeng: High density MOS-gated power device and process for forming same. Intersil Corporation, Jaeckle Fleischmann & Mugel, February 13, 2001: US06188105 (120 worldwide citation)

A high density MOS-gated device comprises a semiconductor substrate and a doped upper layer of a first conduction type disposed on the substrate. The upper layer comprises a heavily doped source region of the first conduction type and a doped well region of a second and opposite conduction type at a ...


4
Christopher B Kocon: MOS-gated power device having extended trench and doping zone and process for forming same. Intersil Corporation, Jaeckle Fleischmann & Mugel, March 6, 2001: US06198127 (116 worldwide citation)

A trench MOS-gated device comprises a doped monocrystalline semiconductor substrate that includes an upper layer and is of a first conduction type. An extended trench in the upper layer of the substrate has a bottom portion filled with a dielectric material that forms a thick layer in the bottom of ...


5
John M S Neilson: High voltage semiconductor structure. Intersil Corporation, Rogers & Killeen, May 23, 2000: US06066878 (96 worldwide citation)

A high voltage MOSFET with low on-resistance and a method of lowering the on-resistance for a specific device breakdown voltage of a high voltage MOSFET. The MOSFET includes a blocking layer of a first conductivity type having vertical sections of a second conductivity type or the blocking layer may ...


6
Qin Huang: Trench contact process. Intersil Corporation, Rogers & Killeen, August 29, 2000: US06110799 (92 worldwide citation)

A trench process for establishing a contact for a semiconductor device with trenches such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs which reduces the number of masks and eliminates the need for lateral diffusion into the trench channel region. Improved control ...


7
Volodymyr A Muratov, Robert G Hodgins, Thomas A Jochum: DC to DC converter method and circuitry. Intersil Corporation, Scott V Lundberg, Fogg and Associates, September 16, 2003: US06621256 (86 worldwide citation)

A DC-to-DC converter has a pulse width modulator PWM) and a hysteretic (ripple) modulator. For low current loads, the hysteretic modulator is selected; for high current loads, the PWM is selected. A mode selection switch senses the polarity of the switched output voltage at the end of each switching ...


8
Qin Huang: Semiconductor structures with trench contacts. Intersil Corporation, Rogers & Killeen, March 14, 2000: US06037628 (84 worldwide citation)

Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional struc ...


9
Robert H Isham, Charles E Hawkes, Michael M Walters: Synchronous-rectified DC to DC converter with improved current sensing. Intersil Corporation, Jaeckle Fleischmann & Mugel, June 12, 2001: US06246220 (78 worldwide citation)

A DC to DC buck pulse width modulator converter circuit includes an input, a high side output and a low side output. A high side switch is electrically connected between a common output node and a voltage supply, and controls a flow of current therethrough dependent upon the high side output. A low ...


10
Charles E Hawkes, Michael M Walters, Robert H Isham: Current mode dc/dc converter with controlled output impedance. Intersil Corporation, Jaeckle Fleischmann & Mugel, January 30, 2001: US06181120 (69 worldwide citation)

A DC/DC converter has an output voltage and sources an output current to a load. The DC/DC converter includes an error amplifier with a reference input and a summing input. The reference input is electrically connected to a reference voltage. The summing input is electrically connected to the output ...