1
Xavier Baie
Doris Bruce B, Chidambarrao Dureseti, Baie Xavier, Mandelman Jack A, Sadana Devendra K, Schepis Dominic J: (fet) Having stress channel and its manufacturing method. Internatl Business Mach Corp &Lt IBM&Gt, July 8, 2004: JP2004-193596 (2 worldwide citation)

PROBLEM TO BE SOLVED: To provide a field-effect transistor whose charge carrier mobility increases by the stress of an electric current channel 22.SOLUTION: The direction of the stress is that in which a current flows (vertical direction). For a PFET device, the stress is compressive stress, while t ...


2
Ugochukwu Njoku
Sittmann Gustav E Iii, Charles W Gainey Jr, Osisek Damian L, Schmidt Donald W, Brice Frank W Jr, Easton Janet R, Wilkins Stephen G, Njoku Ugochukwu C, Lu Tan: Method, system, and program for providing two server virtualization levels. Internatl Business Mach Corp &Lt IBM&Gt, November 29, 2007: JP2007-310884

PROBLEM TO BE SOLVED: To provide a method, a system, a program, and a computer data structure for providing two server virtualization levels.SOLUTION: A first hypervisor provides a first virtualization level while allowing a plurality of logic sections to share a set of resources. A second hyperviso ...


3
Eb Eshun
He Zhong Xiang, Eshun Ebenezer E, Douglas D Coolbaugh, Rassel Robert Mark: Device, and method (mim capacitor and its manufacturing method). Internatl Business Mach Corp &Lt IBM&Gt, January 10, 2008: JP2008-004939

PROBLEM TO BE SOLVED: To provide an MIM capacitor device and a method for manufacturing it.SOLUTION: This device includes: an upper plate which comprises one or more conductive layers and has an upper surface, a lower surface and a side wall; a spreader plate which comprises one or more conductive l ...


4
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Hook Terence B, Rassel Robert M, Sprogis Edmund J, Stamper Anthony K, Murphy William J: Heat sink, resistor, and cooling method for resistor (heat sink for integrated circuit devices). Internatl Business Mach Corp &Lt IBM&Gt, July 27, 2006: JP2006-196894

PROBLEM TO BE SOLVED: To provide a resistor that has a heat sink with excellent heat conduction.SOLUTION: This heat sink includes a conduction path that has a high-thermal conductivity metal and other thermal conductors. In order that an electrical resistor may not be short-circuited to earth by thi ...


5
Kobayashi Yoshinao, Tsujimura Takatoshi, Ono Shinya: Display device, driving circuit, amorphous silicon thin film transistor and driving method of oled. Internatl Business Mach Corp &Lt IBM&Gt, September 10, 2003: JP2003-255856 (145 worldwide citation)

PROBLEM TO BE SOLVED: To appropriately obtain a threshold voltage (Vth) by an amorphous silicon TFT.SOLUTION: The driving circuit is provided with a self light emitting OLED 21, a driving transistor 22 which drives the OLED 21, a branching transistor 23 which is formed by making a portion of the ele ...


6
Shahido Butto, Ellis Wayne F, Gabric John A: Gate length proximity corrected device. Internatl Business Mach Corp &Lt IBM&Gt, Infineon Technol North America, January 20, 2005: JP2005-020008 (96 worldwide citation)

PROBLEM TO BE SOLVED: To provide a method which designs and manufactures a gate structure corrected by gate length proximity effect.SOLUTION: The device comprises a semiconductor substrate which has the array of gate conductors each of which has a length and a width, and comprises dummy gate conduct ...


7
Hatani Naohisa, Okubo Manabu: Semiconductor integrated circuit device. Internatl Business Mach Corp &Lt IBM&Gt, January 25, 2002: JP2002-026296 (77 worldwide citation)

PROBLEM TO BE SOLVED: To make easier the layout of first-layer wiring which connects the gate wiring of each device (MISFET) of diagonally arranged gate arrays to those of the other devices when interconnecting the gate wiring to each other.SOLUTION: Part of the connecting area 10 of gate wiring 4-2 ...


8
Rupp Thomas S, Alan Thomas, Franz Zacha: Patterning method of semiconductor element and semiconductor device. Infineon Technol North America, Internatl Business Mach Corp &Lt IBM&Gt, July 28, 2000: JP2000-208434 (69 worldwide citation)

PROBLEM TO BE SOLVED: To form a contact of minimum feature dimensions by forming a pattern with a first parallel line and a second parallel line vertical to it inside a mask layer on a dielectric layer and forming a rectangular hole which reaches a substrate layer inside a dielectric layer according ...


9
Handy Bosma John Hans, Keith Raymond Walker, Selvage Mei Yang, Chen Yen Fu: Method of scheduling calendar entry via instant messaging interface. Internatl Business Mach Corp &Lt IBM&Gt, August 2, 2007: JP2007-193794 (61 worldwide citation)

PROBLEM TO BE SOLVED: To provide a method, a system and a program for scheduling calendar entries from the inside of the context of an instant messaging interface.SOLUTION: In this scheduling method, an instant messaging client receives input from a user to schedule an instant messaging chat session ...


10
Palmer Charles Campbell, Palmer Elaine Rivette, Smith Sean William: System and method for issuing electronic coupon. Internatl Business Mach Corp &Lt IBM&Gt, March 3, 2000: JP2000-067312 (60 worldwide citation)

PROBLEM TO BE SOLVED: To guarantee that each consumer reads the advertisement of a product by transferring an electronic coupon to a smart card through a smart card reader/writer by a software program when the software program detects a previously defined situation. SOLUTION: The certified electroni ...