1
Christopher Davis, Chuan Cheah, Daniel M Kinzer: Commonly housed diverse semiconductor die. International Rectifier Corporation, Ostrolenk Faber Gerb & Soffen, September 29, 1998: US05814884 (216 worldwide citation)

A MOSFET die and a Schottky diode die are mounted on a common lead frame pad and their drain and cathode, respectively, are connected together at the pad. The pad has a plurality of pins extending from one side thereof. The lead frame has insulated pins on its opposite side which are connected to th ...


2
Peter R Ewer, Arthur Woodworth: Surface mount semiconductor package. International Rectifier Corporation, Ostrolenk Faber Gerb & Soffen, March 20, 2001: US06204554 (174 worldwide citation)

A surface mount semiconductor package includes washing grooves disposed on a bottom surface of a plastic housing. The package also employs locking elements for locking the plastic housing to a metal pad on which a semiconductor device is mounted, where the locking elements include a cross bar betwee ...


3
Peter R Ewer: Crushable bead on lead finger side surface to improve moldability. International Rectifier Corporation, Ostrolenk Faber Gerb & Soffen, March 23, 1999: US05886397 (166 worldwide citation)

A surface mount semiconductor package employs locking elements for locking a plastic housing to a metal pad on which a semiconductor device is mounted. The package includes terminals having elongated crushable beads on their side surfaces adjacent the portions of the terminals just outside the plast ...


4
Daniel M Kinzer: Semiconductor high-power mosfet device. International Rectifier Corporation, Ostrolenk Faber Gerb & Soffen, November 27, 1990: US04974059 (155 worldwide citation)

A high power MOSFET is disclosed in which a plurality of hexagonal base regions formed in the surface of a chip receive respective hexagonal annular source regions. The base regions are relatively shallow and of relatively low conductivity material. A central portion of each of the base regions reac ...


5
Milton J Boden Jr: High voltage mosgated device with trenches to reduce on-resistance. International Rectifier Corporation, Ostrolenk Faber Gerb & Soffen, September 17, 2002: US06452230 (125 worldwide citation)

Parallel, spaced SIPOS (semi-insulating polysilicon) filled trenches extend vertically through the epi layer of a MOSgated device and act to deplete carriers from the vertical conduction volume of the epi between trenches during voltage blocking conditions. Thus, a higher conductivity epi can be use ...


6
Thomas J Ribarich, Robert Marenche, Dana S Wilhelm: Power factor correction control circuit. International Rectifier Corporation, Ostrolenk Faber Gerb & Soffen, July 10, 2001: US06259614 (122 worldwide citation)

A power factor control circuit for an AC to DC power converter includes an inductor receiving AC rectified power. The charging time of the inductor is controlled by a switching circuit based on a comparison between a DC bus voltage and a fixed reference voltage. The circuit operates without an AC re ...


7
Daniel M Kinzer, Srikant Sridevan: High voltage vertical conduction superjunction semiconductor device. International Rectifier Corporation, Ostrolenk Faber Gerb & Soffen, August 19, 2003: US06608350 (121 worldwide citation)

A high voltage vertical conduction semiconductor device has a plurality of deep trenches or holes in a lightly doped body of one conductivity type. A diffusion of the other conductivity type is formed in the trench walls to a depth and a concentration which matches that of the body so that, under re ...


8
Martin Standing, Hazel Deborah Schofield: Chip scale surface mounted device and process of manufacture. International Rectifier Corporation, Ostrolenk Faber Gerb & Soffen, September 23, 2003: US06624522 (106 worldwide citation)

A chip scale package has a semiconductor MOSFET die which has a top electrode surface covered with a layer of a photosensitive liquid epoxy which is photolithographically patterned to expose portions of the electrode surface and to act as a passivation layer and as a solder mask. A solderable contac ...


9
Alexander Lidow, Thomas Herman: Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide. International Rectifier Corporation, Ostrolenk Faber Gerb & Soffen, June 3, 1986: US04593302 (101 worldwide citation)

A high power MOSFET structure consists of a plurality of source cells distributed over the upper surface of a semiconductor chip, with a drain electrode on the bottom of the chip. Each of the source cells is hexagonal in configuration and is surrounded by a narrow, hexagonal conduction region dispos ...


10
Alexander Lidow, Thomas Herman: High power MOSFET with low on-resistance and high breakdown voltage. International Rectifier Corporation, Ostrolenk Faber Gerb & Soffen, March 8, 1983: US04376286 (98 worldwide citation)

A high power MOSFET is disclosed in which two laterally spaced sources each supply current through respective channels in one surface of a semiconductor chip which are controlled by the same gate. The channels lead from the source electrodes to a relatively low resistivity region and from there to a ...