1
Huang Hongxin, Inoue Takashi: (Ja) 空間光変調装置、光学処理装置、カップリングプリズム、及び、カップリングプリズムの使用方法, (En) Spatial light modulator, optical processor, coupling prism and method for using coupling prism. Hamamatsu Photonics, Huang Hongxin, Inoue Takashi, KITAZAWA Kazuhiro, April 6, 2006: WO/2006/035775 (60 worldwide citation)

(EN) Mirrors (3, 7) are arranged on a vertical reference straight line (9), and a reflection type SLM (5) is arranged at a position deviated in a vertical direction from the vertical reference straight line (9). Input light inputted along the vertical reference straight line (9) is reflected by the ...


2

3
Nakayama Tatsuo, Miyamoto Hironobu, Ando Yuji, Kuzuhara Masaaki, Okamoto Yasuhiro, Inoue Takashi, Hataya Koji: (Ja) 半導体装置, (En) Semiconductor device. Nec Corporation, The Furukawa Electric, Nakayama Tatsuo, Miyamoto Hironobu, Ando Yuji, Kuzuhara Masaaki, Okamoto Yasuhiro, Inoue Takashi, Hataya Koji, MIYAZAKI Teruo, January 5, 2006: WO/2006/001369 (10 worldwide citation)

(EN) There is provided a semiconductor device capable of suppressing current collapse, dielectric voltage, and lowering of gain, so as to enabling high-voltage operation and realizing an ideal high output. On a substrate (101), there are formed a buffer layer (102) made from a first GaN-based semico ...


4
Ando Yuji, Okamoto Yasuhiro, Ota Kazuki, Inoue Takashi, Nakayama Tatsuo, Miyamoto Hironobu: (en) Semiconductor device(ja) 半導体装置. Nec Corporation, Ando Yuji, Okamoto Yasuhiro, Ota Kazuki, Inoue Takashi, Nakayama Tatsuo, Miyamoto Hironobu, MIYAZAKI Teruoet al, September 17, 2009: WO/2009/113612 (8 worldwide citation)

(EN) Provided is a semiconductor device which has high electron mobility, and superior uniformity and reproducibility of the threshold voltage while reducing the gate leakage current, and can be applied in the enhancement mode. The semiconductor device sequentially deposits a lower barrier layer com ...


5
Inoue Takashi, Nakayama Tastuo, Ando Yuji, Miyamoto Hironobu: (Ja) 電界効果トランジスタ、ならびに、該電界効果トランジスタの作製に供される多層エピタキシャル膜, (En) Field-effect transistor and multilayer epitaxial film for use in fabrication of the filed-effect transistor. Nec Corporation, Inoue Takashi, Nakayama Tastuo, Ando Yuji, Miyamoto Hironobu, MIYAZAKI Teruo, December 31, 2008: WO/2009/001888 (7 worldwide citation)

(EN) A group-III nitride-based field-effect transistor exhibiting an improved breakdown voltage achieved by reducing the leak current component caused by conduction by residual carriers in the buffer layer, producing an improved channel electron confinement (carrier confinement) effect, and having a ...


6
Inoue Takashi: (Ja) 骨折治療用インプラント, (En) Implant for use in the treatment of bone fracture. Kabushiki Kaisha M E System, Inoue Takashi, KABASAWA Joo, January 25, 2007: WO/2007/010671 (6 worldwide citation)

(EN) Disclosed is an implant for use in the treatment of bone fracture, which can be used for externally confirming the state of recovery of the fracture line while placing the implant in the bone. A plate body (12) of an implant (11) for the treatment of bone fracture is molded from a satisfactoril ...


7
Okamoto Yasuhiro, Miyamoto Hironobu, Ando Yuji, Nakayama Tatsuo, Inoue Takashi, Kuzuhara Masaaki: (Ja) 電界効果トランジスタ, (En) Field-effect transistor. Nec Corporation, Okamoto Yasuhiro, Miyamoto Hironobu, Ando Yuji, Nakayama Tatsuo, Inoue Takashi, Kuzuhara Masaaki, HAYAMI Shinji, July 22, 2004: WO/2004/061978 (5 worldwide citation)

(EN) An electric-field controlling electrode (5) is formed between a gate electrode (2) and a drain electrode (3). A multilayer film composed of an SiN film (21) and an SiO2 film (22) is formed under the electric-field controlling electrode (5). The SiN film (21) is so formed as to cover the surface ...


8
Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori: (Ja) 電界効果トランジスタ, (En) Field effect transistor. Nec Corporation, Miyamoto Hironobu, Ando Yuji, Okamoto Yasuhiro, Nakayama Tatsuo, Inoue Takashi, Ota Kazuki, Wakejima Akio, Kasahara Kensuke, Murase Yasuhiro, Matsunaga Kohji, Yamanoguchi Katsumi, Shimawaki Hidenori, MIYAZAKI Teruo, December 14, 2006: WO/2006/132418 (5 worldwide citation)

(EN) There is provided a field effect transistor having both preferable high-voltage operation characteristic and high-frequency characteristic. The field effect transistor (100) includes a first field plate electrode (116) and a second filed plate electrode (118). The second field plate electrode ( ...


9
Matsumoto Naoya, Fukuchi Norihiro, Inoue Takashi, Igasaki Yasunori: Phase modulating apparatus and phase modulating method. Hamamatsu Photonics, Matsumoto Naoya, Fukuchi Norihiro, Inoue Takashi, Igasaki Yasunori, HASEGAWA Yoshiki, June 11, 2009: WO/2009/072563 (4 worldwide citation)

A phase modulating apparatus wherein even if the condition of input light changes, the phase modulating characteristic of a reflective-type electric address spatial light modulator can be easily corrected with high accuracy. In the LCOS-type phase modulating apparatus, an input part receives a condi ...


10
Ando Yuji, Okamoto Yasuhiro, Ota Kazuki, Inoue Takashi, Nakayama Tatsuo, Miyamoto Hironobu: Semiconductor device. Nec Corporation, Ando Yuji, Okamoto Yasuhiro, Ota Kazuki, Inoue Takashi, Nakayama Tatsuo, Miyamoto Hironobu, HAYAMI Shinji, July 2, 2009: WO/2009/081584 (4 worldwide citation)

A semiconductor device is provided with a lower barrier layer (12) composed of a lattice-relaxed AlxGa1-xN (0≤x≤1) layer, and a channel layer (13), which is laminated on the lower barrier layer (12) with a bandgap smaller than that of the lower barrier layer (12) and composed of an InyGa1-yN (0≤y≤1) ...