11
Hong Kim, Ik Beom Lee: Apparatus and method for extending service area in mobile communication system. Hyundai Electronic, R Neil Sudol, Henry D Coleman, William J Sapone, June 10, 2003: US06577873 (3 worldwide citation)

An apparatus and method for extending the service area in a mobile communication system is provided, in which the service area is defined with a normal mode or an extension mode based on a distance between the base station and the mobile station and, in case of the extension mode, a transmission clo ...


12

13
Dae gyu Park, Sang hyeob Lee: Method for forming lower electrode structure of capacitor of semiconductor device. Hyundai Electronic, Oliff & Berridge, November 27, 2001: US06323083 (2 worldwide citation)

A method for forming a lower electrode structure of a capacitor of a semiconductor device, includes the steps of: forming an active region in a semiconductor substrate; forming an insulation layer atop the semiconductor substrate having the active region formed therein; forming a contact hole in the ...


14
Young N Oh: Ring oscillator having its output amplified in a comparator. Hyundai Electronic, Reid & Priest, February 25, 1997: US05606292 (2 worldwide citation)

A ring oscillator for a semiconductor device comprising a ring oscillation circuit for generating a pulse signal according to a logic state of a control signal, the pulse signal having a predetermined period and a reduced operating voltage level, a comparator for comparing the pulse signal from the ...


15
Hyun S Jang: High speed twos complementer. Hyundai Electronic, Gary M Nath & Associates Nath, February 27, 1996: US05495431 (1 worldwide citation)

A 2's complementer having a simple circuit arrangement and yet obtaining a high 2's-complementation rate. The 2's complementer includes an inverting circuit for inverting binary data with at least two bits to produce an 1's complement. The 2's complementer also includes an inverter for inverting inv ...


16
Jong Hoon Oh: Multiplexer for semiconductor memory device. Hyundai Electronic, Thelen Reid & Priest L, October 20, 1998: US05825235 (1 worldwide citation)

A multiplexer for a semiconductor memory device which has at least two pads for inputting data signals from the outside. The multiplexer has at least two input lines for inputting the data signals from the at least two pads, respectively, at least two control lines for inputting control signals for ...


17
Yeon Ok Kim, Tae Hyung Jung: Address signal generator in a semiconductor memory. Hyundai Electronic, Morgan Lewis & Bockius, December 4, 2001: US06327191 (1 worldwide citation)

A semiconductor memory includes a control signal generator for generating a first control signal, a second control signal, and a third control signal; a first inverter for receiving an external address in accordance with the first control signal; a latch enabled by the second control signal and latc ...


18
Young Ho Kim: Digital audio processor. Hyundai Electronic, Morgan Lewis & Bockius, August 28, 2001: US06282456 (1 worldwide citation)

A digital audio processor includes a first logic unit reversing an enable signal, second logic unit reversing a data signal, a third logic unit receiving output signals from the first and second logic unit and outputting a logical NOR result, a fourth logic unit receiving an output signal from the s ...


19
Byung Jin Ahn, Hee Hyun Chang, Ju Yeab Lee: Method of manufacturing a flash memory device. Hyundai Electronic, Finnegan Henderson Farabow Garrett & Dunner L, October 15, 2002: US06465302 (1 worldwide citation)

There is disclosed a method of manufacturing a flash memory device. In order to solve the problems that expensive photograph equipments are required and the manufacturing costs are thus increased when defining a floating gate and a control gate in a flash memory cell used in a high-integration flash ...


20
Se Aug Jang, Tae Kyun Kim: Method of manufacturing spacers on sidewalls of titanium polycide gate. Hyundai Electronic, Pillsbury Winthrop, May 2, 2006: US07037796

Disclosed is a method for manufacturing a semiconductor device, more particularly to a method of forming a spacer on side-walls of a titanium polycide gate. The method for manufacturing the semiconductor device is as follows. There is provided a semiconductor substrate in which a gate oxide layer, a ...