1
Jong O Kim, Jin H Kim: Double diffused MOSFET cell. Hyundai Electronic, January 1, 1991: US04982249 (14 worldwide citation)

A double diffused MOSFET cell having a particular cell configuration which resembles a circle with a scalloped perimeter is disclosed.


2
Young Jung Choi, Joo Weon Park: Negative voltage drive circuit. Hyundai Electronic, Scott C Harris Esq, July 6, 1999: US05920225 (10 worldwide citation)

The present invention discloses a negative voltage drive circuit which does not takes an influence from the load capacitor or the power supply voltage drive circuit according to the present invention comprises a cross pumping circuit, a pumping unit block and circuit for supplying VCC or VSS power s ...


3
Hyun Soo Sim: Method of erasing a flash memory device. Hyundai Electronic Industries Co Ltc, Fish & Richardson P C, September 2, 1997: US05663909 (9 worldwide citation)

A method of erasing a flash memory device which can reduce the erasure time by performing an erasure and an erasure verification on a plane by plane basis, when performing a chip erase having a plurality of planes is disclosed.


4
Dong Su Park, Byoung Kwon Ahn: Method for manufacturing a capacitor for semiconductor devices. Hyundai Electronic, Pillsbury Winthrop, December 2, 2003: US06656788 (8 worldwide citation)

A capacitor for a semiconductor device is manufactured by forming a lower structure on a semiconductor device, forming a lower electrode on the lower structure of the semiconductor device, forming a dielectric thin film by depositing an amorphous TaON film on the surface of the lower electrode, and ...


5
Sung O Han: Method of manufacturing a flash EEPROM cell using the select gates as a mask. Hyundai Electronic, Fish & Richardson P C, March 4, 1997: US05607871 (6 worldwide citation)

A method of manufacturing a flash EEPROM cell with a split-gate structure which can improve the electrical characteristics of the cell by forming a source region through an ion implantation method using a select gate as a mask to prevent the reduction in the electrical characteristics of a gate oxid ...


6
Jae Kap Kim, In Sool Chung: Internally shielded dynamic random access memory cell. Hyundai Electronic, Morgan & Finnegan, December 12, 1995: US05475247 (4 worldwide citation)

In the manufacturing process of a Dynamic Random Access Memory cell, the conducting layer used for preventing the capacitive coupling between a bit line and a word line is formed over the surface of the entire memory cell excepting the contact region of a bit line and a storage electrode. Moreover, ...


7
Wook Hyun Kwon: Nonvolatile memory, cell array thereof, and method for sensing data therefrom. Hyundai Electronic, Morgan Lewis & Bockius, November 6, 2001: US06313501 (4 worldwide citation)

Nonvolatile memory, cell array thereof, and method for sensing a data therefrom, the method including the steps of: selecting a flash memory cell having a first floating gate and a second floating gate, a first control gate and a second control gate, and a drain and a source; flowing a current throu ...


8
Wook Hyun Kwon: Nonvolatile memory, cell array thereof, and method for sensing data therefrom. Hyundai Electronic, Morgan Lewis & Bockius, August 20, 2002: US06438027 (4 worldwide citation)

Nonvolatile memory, cell array thereof, and method for sensing a data therefrom, the method including the steps of: selecting a flash memory cell having a first floating gate and a second floating gate, a first control gate and a second control gate, and a drain and a source; flowing a current throu ...


9
Sung Wook Choi: Method of fabricating capacitors. Hyundai Electronic, Morgan Lewis & Bockius, March 27, 2001: US06207495 (3 worldwide citation)

The present invention related to a method of fabricating capacitors which fabricates a plurality of capacitors of which capacitances are different one another on a semiconductor substrate. The present invention includes the steps of forming a field insulating layer providing an active area of a devi ...


10
Yong Sik Yu, Kweon Hong: Method of manufacturing a capacitor in a semiconductor device. Hyundai Electronic, Finnegan Henderson Farabow Garrett & Dunner L, October 22, 2002: US06468874 (3 worldwide citation)

There is disclosed a method of manufacturing a capacitor in a semiconductor device. In order to solve the problems that it is difficult to secure an effective surface area and a misalignment between a capacitor plug and an underlying electrode occurs in a capacitor having a stack structure using a B ...