1
Yong Sun Sohn: Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by boron-fluoride compound doping. Hynix Semiconductor, Jacobson Holman PLLC, May 4, 2004: US06730568 (131 worldwide citation)

This invention relates to a method for fabricating a semiconductor device with the epi-channel structure, which is adapted to overcome an available energy limitation and to improve the productivity by providing the method of SSR epi Channel doping by boron-fluoride compound ion implantation without ...


2
Heon Yong Chang, Hae Chan Park, Suk Kyoung Hong: Method of manufacturing a phase change RAM device utilizing reduced phase change current. Hynix Semiconductor, Ladas & Parry, February 19, 2008: US07332370 (121 worldwide citation)

To effectively lower the current required for changing a phase of a phase change layer in a phase change RAM device, metal pads are formed on a semiconductor substrate, and an oxide layer is formed on the metal pads. Nano-sized copolymer patterns aligned with the metal pads covered by the oxide laye ...


3
Tae Woo Jung: Method for forming trench and method for fabricating semiconductor device using the same. Hynix Semiconductor, Lowe Hauptman Ham & Berner, July 19, 2011: US07981806 (118 worldwide citation)

A method for forming a trench includes providing a substrate, and forming the trench in the substrate using a gas containing chlorine (Cl2) gas as a main etch gas and SiFX gas as an additive gas, wherein a sidewall of the trench has a substantially vertical profile by virtue of reaction of the Cl2 g ...


4
Jin Hong Ahn, Sang Hoon Hong, Se Jun Kim, Jae Bum Ko: Semiconductor memory device with reduced data access time. Hynix Semiconductor, August 30, 2005: US06937535 (115 worldwide citation)

A memory device includes at least two cell blocks connected to a global bit line for outputting data in response to an instruction; at least one global bit line connection unit for selectively connecting the global bit line to each cell block under control of a control block, one global bit line con ...


5
Ki Seon Park, Jae Sung Roh: Capacitor of semiconductor device and method for forming the same. Hynix Semiconductor, Ladas & Parry, July 11, 2006: US07074668 (112 worldwide citation)

In a method for forming a capacitor for use in a semiconductor device, a nitride film for stopping etching, a first mold oxide film, an insulating film, deposited on a substrate are etched to expose the respective storage node contacts and thereby to form a plurality of contact holes arrayed in a zi ...


6
Yong Sun Sohn, Chang Woo Ryoo, Jeong Youb Lee: Method for forming transistor of semiconductor device. Hynix Semiconductor, Marshall Gerstein & Borun, December 23, 2003: US06667200 (112 worldwide citation)

A method for forming a transistor of a semiconductor device, including the step of forming channel layers of a first and a second conductive types, performing high temperature thermal process to form stabilized channel layers and forming an epitaxial channel structure having a super-steep-retrograde ...


7
Won Ho Lee: Unit pixel in CMOS image sensor with enhanced reset efficiency. Hynix Semiconductor, Blakely Sokoloff Taylor & Zafman, May 31, 2005: US06900485 (111 worldwide citation)

A unit pixel in a CMOS image sensor is employed to reduce a threshold voltage of a reset transistor by modifying a unit pixel circuit. The unit pixel in the CMOS image sensor including: a semiconductor substrate including an epitaxial layer in which an active area and a FOX area are defined; a photo ...


8
Yong Sun Sohn: pMOS device having ultra shallow super-steep-retrograde epi-channel with dual channel doping and method for fabricating the same. Hynix Semiconductor, Marshall Gerstein & Borun, April 19, 2005: US06881987 (110 worldwide citation)

The present invention provides a p-channel metal-oxide-semiconductor (pMOS) device having an ultra shallow epi-channel satisfying a high doping concentration required for a device of which gate length is about 30 nm even without using a HALO doping layer and a method for fabricating the same. The pM ...


9
Yong Sun Sohn, Sung Jae Joo: Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by decaborane doping. Hynix Semiconductor, Jacobson Holman PLLC, June 22, 2004: US06753230 (108 worldwide citation)

The present invention provides a method for fabricating a semiconductor device with ultra-shallow super-steep-retrograde epi-channel that is able to overcome limitedly useable energies and to enhance manufacturing productivity than using ultra low energy ion implantation technique that has disadvant ...


10
Hee Bok Kang: Phase change resistor cell and nonvolatile memory device using the same. Hynix Semiconductor, Heller Ehrman, May 2, 2006: US07038938 (106 worldwide citation)

A nonvolatile memory device features a phase change resistor cell. More specifically, a phase change resistor and a hybrid switch which does not require an additional gate control signal are used to embody rapid nonvolatile SRAM characteristics. In the nonvolatile memory device, a cell plate is conn ...