1
Yasuo Okuno: Light-emitting diode display. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, November 3, 1981: US04298869 (396 worldwide citation)

A plurality of light-emitting diodes are connected in series to elevate the working voltage. A plurality of said series connection are connected in parallel to maintain display even upon a disconnection accident. The total number of light-emitting diodes provides a bright and failure-safe colored li ...


2
Jun ichi Nishizawa, Yasuo Okuno, Keishiro Takahashi: Light-responsive light-emitting diode display. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, May 11, 1982: US04329625 (276 worldwide citation)

A light-responsive light-emitting diode display comprises a light-emitting diode circuit including a series connection of light-emitting diodes and a light-responsive current-controlling circuit connected in series to said light-emitting diode circuit for supplying a current thereto in correspondenc ...


3
Jun ichi Nishizawa, Tadahiro Ohmi: Short channel MOSFET with buried anti-punch through region. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, January 24, 1995: US05384476 (113 worldwide citation)

A semiconductor device having a source region, a drain region and a channel region which are formed in a surface portion of a semiconductor substrate, and a gate formed with a material having a relatively high built-in voltage relative to the source region. This semiconductor device may further incl ...


4
Jun ichi Nishizawa, Tadahiro Ohmi: Semiconductor fabricating apparatus. Handotai Kenkyu Shinkokai, Sughrue Mion Zinn Macpeak and Seas, December 17, 1985: US04558660 (80 worldwide citation)

A semiconductor fabricating apparatus is capable of fabricating a high quality semiconductor with utilization of crystal growth, thermal oxidation of CVD membrane growth at low temperature. The semiconductor fabricating apparatus includes a reaction chamber having a gas inlet and a gas outlet, an in ...


5
Junichi Nishizawa: Dry etching method. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, November 11, 1980: US04233109 (72 worldwide citation)

A radio frequency and a static electric field are superposedly applied to a low pressure gas to generate a gaseous plasma and to drive ions of selected polarity in a predetermined direction. The processing chamber is pre-evacuated to a sufficiently high vacuum, and an etching gas is introduced into ...


6
Jun ichi Nishizawa, Toru Kurabayashi: Method of epitaxially growing semiconductor crystal using light as a detector. Research Development Corporation of Japan, Jun ichi Nishizawa, Zaidan Hojin, Handotai Kenkyu Shinkoka, Fish & Richardson, October 19, 1993: US05254207 (59 worldwide citation)

Material and impurity gases are introduced into a crystal growth chamber to grow a crystal film on a GaAs substrate. A light beam emitted from a variable-wavelength light source is applied to the crystal film being grown on the substrate while varying the wavelength of the light beam. The dependency ...


7
Jun ichi Nishizawa, Toru Kurabayashi: Method of manufacturing a static induction field-effect transistor. Research Development Corp of Japan, Jun ichi Nishizawa, Zaidan Hojin Handotai Kenkyu Shinkokai, Fish & Richardson, March 22, 1994: US05296403 (58 worldwide citation)

A semiconductor device comprises a vertical MIS-SIT which has a smaller source-to-drain distance for operation at ultra-high speed. The semiconductor device has a substrate crystal for epitaxial growth thereon, least two semiconductor regions of different conductivity types deposited by way of epita ...


8
Jun ichi Nishizawa, Toru Kurabayashi: Semiconductor device comprising a highspeed static induction transistor. Research Development Corp of Japan, Jun ichi Nishzawa, Zaidan Hojin Handotai Kenkyu Shinokai, Fish & Richardson, July 2, 1996: US05532511 (54 worldwide citation)

A semiconductor device includes a substrate crystal of a type for epitaxial growth thereon. The substrate crystal has a (111)A face and a (111)B face. Also provided are at least two semiconductor regions of different conductivity types deposited by way of epitaxial growth on the (111)A face of the s ...


9
Nishizawa Junichi, Ichinose Wasaburo: Position control system using magnetic forces for correcting the inclination of a controlled member including a torsional mounting. Handotai Kenkyu Shinkokai, Kokusai Denki Kabushiki Kaisha, Burns Robert E, Lobato Emmanuel J, Adams Bruce L, June 10, 1975: US3889164 (51 worldwide citation)

A position control system using magnetic forces, in which at least one pole of an electromagnet is opposed to a magnetic substance of a controlled object through an air gap therebetween so that a magnetic circuit including the magnetic substance, the air gap and the electromagnet is provided. The wi ...


10
Nishizawa Junichi: Position control system using magnetic force. Handotai Kenkyu, Burns Robert E, Lobato Emmanuel J, January 29, 1974: US3789285 (50 worldwide citation)

The position control system using magnetic force, in which at least one pole of an electromagnet is opposed to a magnetic substance of a controlled object through an air gap therebetween so that a magnetic circuit including the magnetic substance, the air gap and the electromagnet is provided. The w ...