1
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta Vina, Timmons Michael L, Marsman Charles R, Woelk Egbert, Dicarlo Ronald L: Delivery device. Rohm &Amp, Haas Elect Materials, June 14, 2006: EP1669474-A1 (9 worldwide citation)

Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with ...


2
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta Vina, Power Michael Brendan: Organometallic germanium compounds suitable for use in vapor deposition processes. Rohm &Amp, Haas Elect Materials, October 6, 2004: EP1464724-A2 (8 worldwide citation)

Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly usef ...


3
Deodatta Shenai-Khatkhate
Woelk Egbert, Shenai Khatkhate Deodatta Vina: Germanium compounds suitable for use in vapor deposition processes. Rohm & Haas Elect Materials, October 6, 2004: EP1464725-A2 (7 worldwide citation)

Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.


4
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta, Woelk Egbert: Organometallic compounds suitable for use in vapor deposition processes. Rohm &Amp, Haas Elect Materials, April 12, 2006: EP1645656-A1 (7 worldwide citation)

A method of depositing a film comprising a Group IIIA metal on a substrate comprising the steps of: a) conveying a Group IIIA metal compound having the formula R 3 M, where M is a Group IIIA metal and each R is independently a (C 1 -C 10 ) organic radical or hydrogen, in a gaseous phase to a deposit ...


5
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta Vina, Li Huazhi, Wang Qing Min: Organometallic compounds. Rohm & Haas Elect Materials, December 10, 2008: EP2000561-A1 (5 worldwide citation)

Heteroleptic organometallic compounds containing at least one formamidinate ligand are provided. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liq ...


6
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta Vina, Wang Qing Min: Organometallic compounds containing an alkenyl ligand and suitable for use as vapor deposition precursors. Rohm &Amp, Haas Elect Materials, February 6, 2008: EP1884517-A1 (4 worldwide citation)

Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.


7
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta Vina, Wang Qing Min: Metal-imino complexes suitable for use as vapor deposition precursors. Rohm &Amp, Haas Elect Materials, February 6, 2008: EP1884518-A1 (4 worldwide citation)

Certain organometallic compounds in the form of imino complexes are provided. Such complexes are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.


8
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta Vina: Process for the preparation of germanium compounds. Rohm &Amp, Haas Elect Materials, October 6, 2004: EP1464647-A2 (2 worldwide citation)

Methods of preparing Group IVA and Group VIA organometallic compounds, particularly Group IVA organometallic compounds, are provided. Such manufacturing methods employ an amine and/or phosphine catalyst in a transalkylation step and may be performed in a batch, semi-continuous or continuous manner.


9
Deodatta Shenai-Khatkhate
DIXIT RAVINDRA S, BAI HUA, MODTLAND CURTIS D, WARE ROBERT A, PENDERGAST JR JOHN G, CHRISTENSON CHRISTOPHER P, SHENAI KHATKHATE DEODATTA VINAYAK, AMAMCHYAN ARTASHES, CROUCH KENNETH M, POLCARI ROBERT F: [fr] Préparation de composés organométalliques, [de] Organometallische Verbindungszubereitung, [en] Organometallic compound preparation. ROHM & HAAS ELECT MATERIALS, Dow Global Technologies, February 20, 2013: EP2559682-A2

[en] A method of continuously manufacturing organometallic compounds is provided where two or more reactants are conveyed to a reactor having a laminar flow contacting zone, a heat transfer zone, and a mixing zone having a turbulence-promoting device. and causing the reactants to form the organometa ...


10
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta Vinayak, Power Michael Brendan: Organometallic germanium compounds suitable for use in vapor deposition processes. Rohm &Amp, Haas Elect Materials, November 12, 2008: EP1990345-A1

Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly usef ...