1
Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J: Passive elements in mram embedded integrated circuits. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, KING Robert L, March 8, 2007: WO/2007/027381 (108 worldwide citation)

An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a MRAM cell (316) coupled to and formed above the MRAM circuit (318). Additionally a ...


2
Grynkewich Gregory W, Butcher Brian R, Durlam Mark A, Kyler Kelly, Snyder Charles A, Smith Kenneth H, Tracy Clarence J, Williams Richard: Methods for contracting conducting layers overlying magnetoelectronic elements of mram devices. Freescale Semiconductor, Grynkewich Gregory W, Butcher Brian R, Durlam Mark A, Kyler Kelly, Snyder Charles A, Smith Kenneth H, Tracy Clarence J, Williams Richard, KING Robert L, November 4, 2004: WO/2004/095515

A method for contacting an electrically conductive layer overlying a magnetoelectronics element includes forming a memory element layer overlying a dielectric region. A first electrically conductive layer (26) is deposited overlying the memory element layer (18). A first dielectric layer (28) is dep ...


3
Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, Zuo Jiang Kai: Magnetic tunnel junction current sensors. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, Zuo Jiang Kai, KING Robert L, May 10, 2007: WO/2007/053340

An integrated circuit device (600) is provided which includes an active circuit component (604, 804) and a current sensor (602, 802). The active circuit component (604, 804) may be coupled between a first conductive layer (206) and a second conductive layer (210), and is configured to produce a firs ...


4
Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J: Mram embedded smart power integrated circuits. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, KING Robert L, January 11, 2007: WO/2007/005303

An integrated circuit device (300) includes a magnetic random access memory ('MRAM') architecture and a smart power integrat circuit architecture formed on the same substrate (302) using the same fabrication process technology The fabrication process technology is a modular process having a front en ...


5
Chung Young Sir, Baird Robert W, Grynkewich Gregory W: Method for tunnel junction sensor with magnetic cladding. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Grynkewich Gregory W, KING Robert L, February 8, 2007: WO/2007/016009

Methods and apparatus are provided for sensing physical parameters. The apparatus (30) comprises a magnetic tunnel junction (MTJ) [32] and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic s ...


6
Smith Kenneth H, Butcher Brian R, Grynkewich Gregory W, Pietambaram Srinivas V, Rizzo Nicholas D: Magnetic tunnel junction memory and method with etch-stop layer. Freescale Semiconductor, Smith Kenneth H, Butcher Brian R, Grynkewich Gregory W, Pietambaram Srinivas V, Rizzo Nicholas D, KING Robert L, May 2, 2008: WO/2008/051656

Methods and apparatus are provided for magnetoresistive memories employing magnetic tunnel junction (MTJ). The apparatus comprises a MTJ (61, 231), first (60, 220) and second (66, 236) electrodes coupled, respectively, to first (62, 232) and second (64, 234) magnetic layers of the MTJ (61, 231), fir ...


7
Butcher Brian R, Grynkewich Gregory W, Kyler Kelly W, Smith Kenneth H, Williams Richard G: Methods and structures for electrical communication with an overlying electrode for a semiconductor element. Freescale Semiconductor, Butcher Brian R, Grynkewich Gregory W, Kyler Kelly W, Smith Kenneth H, Williams Richard G, KING Robert L, May 26, 2006: WO/2006/055179

Structures for electrical communication with an overlying electrode for a semiconductor element and methods for fabricating such structures are provided. The structure (10) for electrical communication with an overlying electrode comprises a first electrode (50) having a lateral dimension, a semicon ...



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