1
Nobuhiko Tsuji, Keijiroh Nakamura, Koichi Endoh, Toshiyoshi Hamada, Keiichi Ishida: Blood sugar analyzer having fixed enzyme membrane sensor. Fuji Electric Company, Brumbaugh Graves Donohue & Raymond, December 13, 1983: US04420564 (384 worldwide citation)

A blood sugar analyzing apparatus has a reaction cell which houses a fixed enzyme membrane sensor and a measuring electrode which receives a blood specimen which causes a chemical reaction between the blood specimen and said fixed enzyme membrane for measuring the blood sugar concentration in the sp ...


2
Nobuhiko Tsuji, Keijiroh Nakamura, Koichi Endoh, Toshiyoshi Hamada, Keiichi Ishida: Blood sugar analyzing apparatus. Fuji Electric, Brumbaugh Graves Donohue & Raymond, October 4, 1983: US04407959 (242 worldwide citation)

A blood sugar analyzer system for measuring the blood sugar concentration level in a blood specimen is provided. A sensor having a fixed enzyme membrane and a measuring electrode generates a reaction current proportional to the blood sugar level of the specimen, and a sampling mechanism samples the ...


3
Nobuhiko Tsuji, Keijiroh Nakamura, Koichi Endoh, Toshiyoshi Hamada, Keiichi Ishida: System for controlling a printer in a blood sugar analyzer. Fuji Electric Company, Brumbaugh Graves Donohue & Raymond, November 20, 1984: US04483924 (190 worldwide citation)

A blood sugar analyzer has a reaction cell which houses a fixed enzyme membrane and measuring electrode and which receives a blood specimen, to cause a chemical reaction between the specimen and membrane for measuring the blood sugar concentration in the specimen on the basis of the reaction current ...


4
Tatsuhiko Fujihira: Semiconductor device having a plurality of parallel drift regions. Fuji Electric, Robert J Frank, Michael A Sartori, Venable, August 1, 2000: US06097063 (137 worldwide citation)

A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions and a plurality of second conductive type compa ...


5
Yasushi Miyasaka, Tatsuhiko Fujihira, Yasuhiko Ohnishi, Katsunori Ueno, Susumu Iwamoto: Semiconductor device with alternating conductivity type layer and method of manufacturing the same. Fuji Electric, Rossi & Associates, September 18, 2001: US06291856 (125 worldwide citation)

This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n drift regio ...


6
Naoto Fujishima: Method of manufacturing vertical trench misfet. Fuji Electric, Rossi & Associates, January 16, 2001: US06174773 (120 worldwide citation)

A vertical trench MISFET is provided that includes a semiconductor substrate having a first conductivity type semiconductor, and a second conductivity type impurity layer provided on the first conductivity type semiconductor. A trench extends from a surface of the semiconductor substrate to reach sa ...


7
Shoji Sato, Hiroyoshi Yamamoto, Yoshihiko Okuyama: Pipeline built-in electric power generating set. Fuji Electric, Finnegan Henderson Farabow Garrett & Dunner, April 26, 1988: US04740711 (117 worldwide citation)

An electric power generating set for a fluid pipeline, comprising a turbine coupled to the pipeline for rotating under the pressure of the fluid moving in the pipeline; a generator coupled to the downstream end of the turbine for generating electric power upon rotation, and a heat exchanger for comm ...


8
Katsunori Ueno: Method of forming silicon carbide trench mosfet with a schottky electrode. Fuji Electric, Rossi & Associates, December 2, 1997: US05693569 (117 worldwide citation)

A silicon carbide trench MOSFET is provided that includes a first conductivity type semiconductor substrate made of silicon carbide. A first conductivity type drift layer and a second conductivity type base layer, both made of silicon carbide, are sequentially formed by epitaxial growth on the semic ...


9
Seiji Imamura, Noriaki Matsumoto: Laser processing method. Fuji Electric Corporate Research & Development, Finnegan Henderson Farabow Garrett & Dunner, March 29, 1988: US04734550 (107 worldwide citation)

A laser processing method comprises the steps of generating a pulsed laser beam having a substantially circular shape; modifying the beam to a substantially rectangular shape; and scribing the surface of a workpiece with the rectangular beam to form grooves therein. The scribing step may include sca ...


10
Naoto Fujishima: Vertical trench misfet and method of manufacturing the same. Fuji Electric, Rossi & Associates, November 9, 1999: US05981996 (106 worldwide citation)

A vertical trench MISFET is provided that includes a semiconductor substrate having a first conductivity type semiconductor, and a second conductivity type impurity layer provided on the first conductivity type semiconductor. A trench extends from a surface of the semiconductor substrate to reach sa ...



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