1
Nobuhiko Tsuji, Keijiroh Nakamura, Koichi Endoh, Toshiyoshi Hamada, Keiichi Ishida: Blood sugar analyzer having fixed enzyme membrane sensor. Fuji Electric Company, Brumbaugh Graves Donohue & Raymond, December 13, 1983: US04420564 (394 worldwide citation)

A blood sugar analyzing apparatus has a reaction cell which houses a fixed enzyme membrane sensor and a measuring electrode which receives a blood specimen which causes a chemical reaction between the blood specimen and said fixed enzyme membrane for measuring the blood sugar concentration in the sp ...


2
Nobuhiko Tsuji, Keijiroh Nakamura, Koichi Endoh, Toshiyoshi Hamada, Keiichi Ishida: Blood sugar analyzing apparatus. Fuji Electric, Brumbaugh Graves Donohue & Raymond, October 4, 1983: US04407959 (250 worldwide citation)

A blood sugar analyzer system for measuring the blood sugar concentration level in a blood specimen is provided. A sensor having a fixed enzyme membrane and a measuring electrode generates a reaction current proportional to the blood sugar level of the specimen, and a sampling mechanism samples the ...


3
Nobuhiko Tsuji, Keijiroh Nakamura, Koichi Endoh, Toshiyoshi Hamada, Keiichi Ishida: System for controlling a printer in a blood sugar analyzer. Fuji Electric Company, Brumbaugh Graves Donohue & Raymond, November 20, 1984: US04483924 (196 worldwide citation)

A blood sugar analyzer has a reaction cell which houses a fixed enzyme membrane and measuring electrode and which receives a blood specimen, to cause a chemical reaction between the specimen and membrane for measuring the blood sugar concentration in the specimen on the basis of the reaction current ...


4
Tatsuhiko Fujihira: Semiconductor device having a plurality of parallel drift regions. Fuji Electric, Robert J Frank, Michael A Sartori, Venable, August 1, 2000: US06097063 (139 worldwide citation)

A semiconductor device has a drift region in which a drift current flows if it is in the ON mode and which is depleted if it is in the OFF mode. The drift region is formed as a structure having a plurality of first conductive type divided drift regions and a plurality of second conductive type compa ...


5
Yasushi Miyasaka, Tatsuhiko Fujihira, Yasuhiko Ohnishi, Katsunori Ueno, Susumu Iwamoto: Semiconductor device with alternating conductivity type layer and method of manufacturing the same. Fuji Electric, Rossi & Associates, September 18, 2001: US06291856 (128 worldwide citation)

This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n drift regio ...


6
Naoto Fujishima: Method of manufacturing vertical trench misfet. Fuji Electric, Rossi & Associates, January 16, 2001: US06174773 (120 worldwide citation)

A vertical trench MISFET is provided that includes a semiconductor substrate having a first conductivity type semiconductor, and a second conductivity type impurity layer provided on the first conductivity type semiconductor. A trench extends from a surface of the semiconductor substrate to reach sa ...


7
Shoji Sato, Hiroyoshi Yamamoto, Yoshihiko Okuyama: Pipeline built-in electric power generating set. Fuji Electric, Finnegan Henderson Farabow Garrett & Dunner, April 26, 1988: US04740711 (119 worldwide citation)

An electric power generating set for a fluid pipeline, comprising a turbine coupled to the pipeline for rotating under the pressure of the fluid moving in the pipeline; a generator coupled to the downstream end of the turbine for generating electric power upon rotation, and a heat exchanger for comm ...


8
Yasuyuki Kawada: Manufacturing method of a silicon carbide semiconductor device. Fuji Electric, Rossi Kimms & McDowell, December 6, 2011: US08071482 (118 worldwide citation)

A manufacturing method for a silicon carbide semiconductor device is disclosed. It includes an etching method in which an Al film and Ni film are laid on an SiC wafer in this order and wet-etched, whereby a two-layer etching mask is formed in which Ni film portions overhang Al film portions. Mesa gr ...


9
Katsunori Ueno: Method of forming silicon carbide trench mosfet with a schottky electrode. Fuji Electric, Rossi & Associates, December 2, 1997: US05693569 (118 worldwide citation)

A silicon carbide trench MOSFET is provided that includes a first conductivity type semiconductor substrate made of silicon carbide. A first conductivity type drift layer and a second conductivity type base layer, both made of silicon carbide, are sequentially formed by epitaxial growth on the semic ...


10
Masahiro Minami, Hiroaki Ichikawa, Masahito Kawai, Yukio Murai, Kaoru Nakajima: Method and device for controlling photovoltaic inverter, and feed water device. Ebara Corporation, Fuji Electric Holdings, Young & Thompson, October 24, 2006: US07126294 (108 worldwide citation)

A photovoltaic inverter control method includes steps of monitoring a variation in output voltage of a solar battery by a power and voltage monitoring circuit (51) and, when the variation occurs, accelerating or decelerating an electric motor (3) to maximize the output voltage of the solar battery ( ...