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George R Leal, Jie Hua Zhao, Edward R Prack, Robert J Wenzel, Brian D Sawyer, David G Wontor, Marc Alan Mangrum: Circuit device with at least partial packaging and method for forming. Freescale Semiconductor, Susan C Hill, January 4, 2005: US06838776 (184 worldwide citation)

In one embodiment, circuit device (15) is placed within an opening of a conductive layer (10) which is then partially encapsulated with an encapsulant (24) so that the active surface of the circuit device (15) is coplanar with the conductive layer (10). In this embodiment, at least a portion of the ...


2
Dave S Mahadevan, Michael E Chapman, Arvind S Salian: Method of forming a semiconductor package and structure thereof. Freescale Semiconductor, Kim Marie Vo, April 18, 2006: US07030469 (171 worldwide citation)

An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed by forming a conductive layer (42, 64) over a mold encapsulant (35, 62). The conductive layer (42, 64) may be electrically coupled using a wire to the leadframe (10, 52) of the semiconductor package (2, 50). The ...


3
Timothy R Miller, John W McCorkle: System and method for baseband removal of narrowband interference in ultra wideband signals. Freescale Semiconductor, Posz & Bethards, December 21, 2004: US06834073 (154 worldwide citation)

A system, method, and computer program product for baseband removal of narrowband interference contained within UWB signals in a UWB receiver. The RFI is extracted from the UWB signal by employing a filter that is matched approximately with the RFI in the baseband signal, extracting RFI, and passing ...


4
George R Leal, Jie Hua Zhao, Edward R Prack, Robert J Wenzel, Brian D Sawyer, David G Wontor, Marc Alan Mangrum: Circuit device with at least partial packaging, exposed active surface and a voltage reference plane. Freescale Semiconductor, Susan C Hill, Joanna G Chiu, July 26, 2005: US06921975 (145 worldwide citation)

A circuit device (15) is placed within an opening of a conductive layer (10) which is then partially encapsulated with an encapsulant (24) so that the active surface of the circuit device (15) is coplanar with the conductive layer (10). At least a portion of the conductive layer (10) may be used as ...


5
Daniel T Pham, Alexander L Barr, Leo Mathew, Bich Yen Nguyen, Anne M Vandooren, Ted R White: Method for forming a double-gated semiconductor device. Freescale Semiconductor, James L Clingan Jr, January 4, 2005: US06838322 (145 worldwide citation)

A method for forming a polysilicon FinFET (10) or other thin film transistor structure includes forming an insulative layer (12) over a semiconductor substrate (14). An amorphous silicon layer (32) forms over the insulative layer (12). A silicon germanium seed layer (44) forms in association with th ...


6
James D Burnett: One transistor DRAM cell structure and method for forming. Freescale Semiconductor, James L Clingan Jr, Daniel D Hill, March 1, 2005: US06861689 (140 worldwide citation)

A single transistor DRAM cell is formed in a SOI substrate so that the DRAM cells are formed in bodies that are electrically isolated from each other. Each cell has doped regions that act as source and drain contacts. Between the drain contact and the body is a region, which aids in impact ionizatio ...


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Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J: Passive elements in mram embedded integrated circuits. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, KING Robert L, March 8, 2007: WO/2007/027381 (108 worldwide citation)

An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a MRAM cell (316) coupled to and formed above the MRAM circuit (318). Additionally a ...


9
Matthias Passlack, Olin L Hartin, Marcus Ray, Nicholas Medendorp: Enhancement mode metal-oxide-semiconductor field effect transistor. Freescale Semiconductor, Patricia S Goddard, November 8, 2005: US06963090 (104 worldwide citation)

An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer a ...


10
Jing Qi, Janice M Danvir, Tomasz L Klosowiak, Prasanna Kulkarni, Nadia Yala: Flip-chip assembly with thin underfill and thick solder mask. Freescale Semiconductor, August 10, 2004: US06774497 (104 worldwide citation)

The invention provides a method for attaching a flip chip to an electrical substrate such as a printed wiring board. A bumped flip chip is provided, the flip chip including an active surface and a plurality of connective bumps extending from the active surface, each connective bump including a side ...



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