1
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator metal capacitor using a hardmask. International Business Machines Corporation, Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara, CANALE Anthony J, December 22, 2005: WO/2005/122245

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer (102, 106) is formed above a lower conductor layer (100) and an upper conductor layer (104, 108) is formed above the dielectric layer. The invention then forms an etch stop layer (200) ab ...


2
Bolam Ronald, Coolbaugh Douglas, Downes Keith, Eshun Ebenezer, Feilchenfeld Natalie, He Zhong Xiang: Method and structure for creation of a metal insulator metal capacitor. International Business Machines Corporation, IBM United Kingdom, Bolam Ronald, Coolbaugh Douglas, Downes Keith, Eshun Ebenezer, Feilchenfeld Natalie, He Zhong Xiang, LING Christopher John, November 15, 2007: WO/2007/128754

The invention is directed to an improved capacitor that reduces edge defects and prevents yield failures. A first embodiment of the invention comprises a protective layer adjacent an interface of a conductive layer with the insulator, while the second embodiment of the invention comprises a protecti ...