1
Tripsas Nicholas H, Bill Colin S, Vanbuskirk Michael A, Buynoski Matthew, Fang Tzu Ning, Cai Wei Daisy, Pangrle Suzette K, Avanzino Steven: Diode array architecture for addressing nanoscale resistive memory arrays. Spansion, Tripsas Nicholas H, Bill Colin S, Vanbuskirk Michael A, Buynoski Matthew, Fang Tzu Ning, Cai Wei Daisy, Pangrle Suzette K, Avanzino Steven, LAM Christine S, May 26, 2006: WO/2006/055482 (11 worldwide citation)

The present memory structure includes thereof a first conductor (BL), a second conductor (WL), a resistive memory cell (130) connected to the second conductor (WL), a first diode (134) connected to the resistive memory cell (130) and the first conductor (BL), and oriented in the forward direction fr ...


2
Fang Tzu Ning, Vanbuskirk Michael A, Bill Colin S: Control of memory devices possessing variable resistance characteristics. Advanced Micro Devices, Fang Tzu Ning, Vanbuskirk Michael A, Bill Colin S, DRAKE Paul S, April 6, 2006: WO/2006/036622 (3 worldwide citation)

Systems and methods employing at least one constant current source (114, 404) to facilitate programming of an organic memory cell (102, 302, 402, 904, 1102, 1206) and/or employing at least one constant voltage source (112, 304) to facilitate erasing of a memory device (200, 300, 400, 900, 1100). The ...


3
Vanbuskirk Michael A, Bill Colin S, Lan Zhida, Fang Tzu Ning: Write-once read-many times memory. Spansion, Vanbuskirk Michael A, Bill Colin S, Lan Zhida, Fang Tzu Ning, DRAKE Paul S, October 5, 2006: WO/2006/104858 (2 worldwide citation)

A write-once read-many times memory device (130) is made up of first and second electrodes (132, 138), a passive layer (134) between the first and second electrodes (132, 138), and an active layer (136) between the first and second electrodes. The memory device (130) is programmed by providing a cha ...


4
Bill Colin S, Kaza Swaroop, Fang Tzu Ning, Spitzer Stuart: Method of programming, reading and erasing memory-diode in a memory-diode array. Spansion, Bill Colin S, Kaza Swaroop, Fang Tzu Ning, Spitzer Stuart, LAM Christine S, July 6, 2006: WO/2006/071683 (1 worldwide citation)

A memory array (140) includes first and second sets of conductors (142), (144) and a plurality of memory-diodes (130), each connecting in a forward direction a conductor (BL) of the first set (142) with a conductor (WL) of the second set (144). An electrical potential is applied across a selected me ...


5
Chen An, Haddad Sameer, Fang Tzu Ning: Resistive memory device with improved data retention and reduced power. Spansion, Chen An, Haddad Sameer, Fang Tzu Ning, JAIPERSHAD Rajendra, November 23, 2006: WO/2006/124235 (1 worldwide citation)

Provided herein is method of programming a resistive memory device (130, 230), the resistive memory device (130, 230) including a first electrode (132, 232), a second electrode (138, 236), and an active layer (136, 234) between the first and second electrodes (132, 138 or 232, 236). In the programmi ...


6
Bill Colin S, Vanbuskirk Michael A, Lan Zhida, Ennals John S, Fang Tzu Ning: Polymer-based transistor devices, methods, and systems. Advanced Micro Devices, Bill Colin S, Vanbuskirk Michael A, Lan Zhida, Ennals John S, Fang Tzu Ning, DRAKE Paul S, June 7, 2007: WO/2007/064334

Disclosed is a semiconductor transistor device (100) with an annular gate (118) surrounding, at least in part, a channel (110) that conducts current between a first (104) and second (114) source/drain. Also disclosed is a semiconductor transistor device (100) having an annular gate (118) and contain ...


7
Fang Tzu Ning, Bill Colin S, Cai Wei Daisy, Gaun David, Gershon Eugene: Program/erase waveshaping control to increase data retention of a memory cell. Spansion, Fang Tzu Ning, Bill Colin S, Cai Wei Daisy, Gaun David, Gershon Eugene, JAIPERSHAD Rajendra, February 8, 2007: WO/2007/015864

System(s) and method(s) of improving and controlling memory cell data retention are disclosed. A particular pulse width and magnitude is generated and applied to a memory cell made of at least two electrodes with a controllably conductive media between the at least two electrodes. The current across ...


8
Fang Tzu Ning, Kaza Swaroop, Chen An, Haddad Sameer: Method of selecting operating characteristics of a resistive memory device. Spansion, Fang Tzu Ning, Kaza Swaroop, Chen An, Haddad Sameer, JAIPERSHAD Rajendra, May 8, 2008: WO/2008/054572

In a method of providing an operating characteristic of a resistive memory device (38, 138), material of an electrode thereof is selected to in turn provide a selected operating characteristic of the device. The material of the electrode may be reacted with material of an insulating layer (134) of t ...



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