1
Ashok Challa, Alan Elbanhawy, Steven P Sapp, Peter H Wilson, Babak S Sani, Christopher B Kocon: Power semiconductor devices and methods of manufacture. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, March 18, 2008: US07345342 (196 worldwide citation)

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other tech ...


2
Tich T Dao, Gary R Burke: Floating point microprocessor with directable two level microinstructions. Fairchild Semiconductor Corporation, Lee Patch, Michael Glenn, William H Murray, May 22, 1990: US04928223 (186 worldwide citation)

A microprocessor integrator circuit includes split nanocode memories which enables simultaneous execution of an arithmetic operation and an operand fetch for maximizing through-put. The circuit also includes a shared sequencing arithmetic logic unit which handles all microcode sequencing plus memory ...


3
Brian Sze Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst: Field effect transistor and method of its manufacture. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, August 6, 2002: US06429481 (180 worldwide citation)

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...


4
Rajeev Joshi: High performance flip chip package. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, October 17, 2000: US06133634 (166 worldwide citation)

An improved semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. A silicon die is attached to a carrier (or substrate) that has a cavity substantially surrounding the die. Direct connection of the active surface of the silicon die to t ...


5
Madhu Rayabhari: Configurable universal serial bus node. Fairchild Semiconductor Corporation, Mikio Ishimaru, March 28, 2000: US06044428 (163 worldwide citation)

A Universal Serial Bus node having a non-volatile memory is preprogrammed with the data bits necessary to configure an attached state machine to become a translator or modified translator for signals from a computer peripheral device. On startup, the Universal Serial Bus node is configured to transl ...


6
Steven Sapp: Dual trench power MOSFET. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, March 23, 2004: US06710403 (161 worldwide citation)

In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region of a first conductivity type, a gate trench which extends into the first semiconductor region, and a source trench which extends into the first semiconductor region. The source trench is lateral ...


7
Rajeev Joshi, Consuelo Tangpuz, Erwin Victor R Cruz: Wafer-level coated copper stud bumps. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, May 4, 2004: US06731003 (152 worldwide citation)

A method for forming a semiconductor die package is disclosed. In one embodiment, the method includes forming a semiconductor die comprising a semiconductor device. A plurality of copper bumps is formed on the semiconductor die using a plating process. An adhesion layer is formed on each of the copp ...


8
Steven Paul Sapp: Monolithically integrated trench MOSFET and Schottky diode. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, February 26, 2002: US06351018 (143 worldwide citation)

A monolithically integrated Schottky diode together with a high performance trenched gate MOSFET. A MOS enhanced Schottky diode structure is interspersed throughout the trench MOSFET cell array to enhance the performance characteristics of the MOSFET switch. The forward voltage drop is reduced by ta ...


9
Michael E Thomas, Jeffrey D Chinn: High performance interconnect system for an integrated circuit. Fairchild Semiconductor Corporation, Lee Patch, Michael Glenn, William H Murray, June 12, 1990: US04933743 (139 worldwide citation)

A semiconductor integrated circuit device includes a high performance interconnect structure which comprises a plurality of interconnects, with each interconnect being structurally separated from the remaining interconnects except at electrical contact points. In one embodiment, each interconnect is ...


10
Brian S Mo: Trench structure substantially filled with high-conductivity material. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, August 14, 2001: US06274905 (133 worldwide citation)

A trench structure that is substantially filled with high-conductivity material such as refractory metal particularly suitable for fast switching trench MOSFET applications. The trench is first lined by a dielectric material such as silicon dioxide. A layer of polysilicon is then formed on the diele ...