1
Eb Eshun
Chinthakindi Anil K, Eshun Ebenezer E: Thin film resistors with current density enhancing layer (cdel). International Business Machines Corporation, Chinthakindi Anil K, Eshun Ebenezer E, JAKLITSCH Lisa U, August 24, 2006: WO/2006/088709 (1 worldwide citation)

A thin film resistor device and method of manufacture includes a layer of a thin film conductor material (20) and a current density enhancing layer (CDEL). The CDEL is an insulator material adapted to adhere to the thin film conductor material (20) and enables the said thin film resistor to carry hi ...


2
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator metal capacitor using a hardmask. International Business Machines Corporation, Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara, CANALE Anthony J, December 22, 2005: WO/2005/122245

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer (102, 106) is formed above a lower conductor layer (100) and an upper conductor layer (104, 108) is formed above the dielectric layer. The invention then forms an etch stop layer (200) ab ...


3
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Gambino Jeffrey P, He Zhong Xiang, Ramachandran Vidhya: Metal-insulator-metal capacitor and method of fabrication. International Business Machines Corporation, Coolbaugh Douglas D, Eshun Ebenezer E, Gambino Jeffrey P, He Zhong Xiang, Ramachandran Vidhya, SABO William D, April 14, 2005: WO/2005/034201

A method and structure for a MIM capacitor, the structure including: an electronic device, comprising: an interievel dielectric layer formed on a semiconductor substrate; a copper bottom electrode formed in the interievel dielectric layer, atop surface of the bottom electrode co-planer with a top su ...


4
Eshun Ebenezer E, Johnson Jeffrey B, Phelps Richard A, Rassel Robert M, Zierak Michael L: Junction field effect transistor with a hyperabrupt junction. International Business Machines Corporation, Eshun Ebenezer E, Johnson Jeffrey B, Phelps Richard A, Rassel Robert M, Zierak Michael L, KOTULAK Richard M, December 31, 2008: WO/2009/003012

A junction field effect transistor (JFET) (Fig. 4) has a hyperabrupl junction laj cr (54) that functions as a channel of a JFFT. The hyperabrupt junction layer (54) is formed by two dopant profiles (50. 52) of opposite t}pes such that one dopant concentration profile has a peak concentration depth a ...



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