1
Mather Phillip, Chung Young Sir, Engel Bradley N: Improved magnetic sensor design for suppression of barkhausen noise. Mather Phillip, Chung Young Sir, Engel Bradley N, Everspin Technologies, KOCH William, October 1, 2009: WO/2009/120894 (6 worldwide citation)

A semiconductor process and apparatus provide a high-performance magnetic field sensor from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216), where each differential sensor (e.g., 201) is formed from a Wheatstone bridge structure with four uns ...


2
Rizzo Nicholas D, Engel Bradley N, Janesky Jason A, Slaughter Jon M, Sun Jijun: Oblique deposition to induce magnetic anisotropy for mram cells. Freescale Semiconductor, Rizzo Nicholas D, Engel Bradley N, Janesky Jason A, Slaughter Jon M, Sun Jijun, INGRASSIA Vincent B, January 20, 2005: WO/2005/006450 (2 worldwide citation)

A method of fabricating a magnetoresistive tunneling junction cell comprising the steps of providing a substrate with a surface, depositing a first magnetic region (17) having a resultant magnetic moment vector onto the substrate, depositing an electrically insulating material (16) onto the first ma ...


3
Engel Bradley N: Magnetoelectronics information device having a compound magnetic free layer. Freescale Semiconductor, Engel Bradley N, INGRASSIA Vincent B, January 20, 2005: WO/2005/006338

A magnetoelectronics information device (20) is provided that includes two multi-layer structures (24, 26) and a spacer layer (28) interposed between the two multi-layer structures. Each of the multi-layer structures has two magnetic sublayers (38, 40, and 44, 46) and a spacer layer (42, 48) interpo ...


4
Engel Bradley N, Salter Eric J, Slaughter Jon M: Method of writing to a multi-state magnetic random access memory cell. Freescale Semiconductor, Engel Bradley N, Salter Eric J, Slaughter Jon M, KING Robert L, March 17, 2005: WO/2005/024905

A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device (12) having two bits (18, 20) sandwiched between a word line (14) and a digit line (16) so that current waveforms (104, 106) can be applied to the word and digit lines at vari ...


5
Janesky Jason A, Engel Bradley N, Slaughter Jon M: Magnetoresistive random access memory with reduced switching field variation. Freescale Semiconductor, Janesky Jason A, Engel Bradley N, Slaughter Jon M, KING Robert L, March 10, 2005: WO/2005/022653

An array of multi-state, multi-layer magnetic memory devices (10) wherein each memory device comprises a nonmagnetic spacer region (22) and a free magnetic region (24) positioned adjacent to a surface of the nonmagnetic spacer region, the free magnetic region including a plurality of magnetic layers ...


6
Mancoff Frederick B, Engel Bradley N, Rizzo Nicholas D: Spin-transfer based mram using angular-dependent selectivity. Freescale Semiconductor, Mancoff Frederick B, Engel Bradley N, Rizzo Nicholas D, KING Robert L, May 4, 2006: WO/2006/047027

A magnetic random access memory ('MRAM') device (200) can be selectively written using spin-transfer reflection mode techniques. Selectivity of a designated MRAM cell within an MRAM array is achieved by the dependence of the spin-transfer switching current on the relative angle between the magnetiza ...


7
Chung Young Sir, Baird Robert W, Durlam Mark A, Engel Bradley N: 3-d inductor and transformer devices in mram embedded integrated circuits. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Engel Bradley N, KING Robert L, December 14, 2006: WO/2006/132750

An integrated circuit device (300) includes a magnetic random access memory ('MRAM') architecture (310) and at least one inductance element (3 12, 3 14) formed on the same substrate using the same fabrication process technology. The inductance element, which may be an inductor or a transformer, is f ...


8
Chung Young Sir, Baird Robert W, Engel Bradley N: Magnetic tunnel junction sensor. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Engel Bradley N, KING Robert L, February 8, 2007: WO/2007/016011

Methods and apparatus are provided for sensing physical parameters. The apparatus (130) comprises a magnetic tunnel junction (MTJ) (32) and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ com ...


9
Chung Young Sir, Baird Robert W, Engel Bradley N: Magnetic tunnel junction pressure sensors and methods. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Engel Bradley N, KING Robert L, September 13, 2007: WO/2007/102885

An integrated circuit device (800) is provided which comprises a substrate (801), a conductive line (807) configured to experience a pressure, and a magnetic tunnel junction ('MTJ') core (802) formed between the substrate and the current line. The conductive line (807) is configured to move in respo ...


10
Rizzo Nicholas D, Dave Renu W, Engel Bradley N, Janesky Jason A, Sun Jijun: Reduced power magnetoresistive random access memory elements. Freescale Semiconductor, Rizzo Nicholas D, Dave Renu W, Engel Bradley N, Janesky Jason A, Sun Jijun, KING Robert L, June 1, 2006: WO/2006/058224

Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device (100) has an array of memory elements (102). Each element (102) comprises a fixed magnetic portion (106), a tunnel barrier portion (1 ...