1
Masaki Matsui, Shoichi Yamauchi, Hisayoshi Ohshima, Kunihiro Onoda, Akiyoshi Asai, Takanari Sasaya, Takeshi Enya, Jun Sakakibara: Method for manufacturing a semiconductor substrate. Denso Corporation, Pillsbury Madison & Sutro, February 20, 2001: US06191007 (282 worldwide citation)

Methods for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layer on a substrate on which a buried pattern structure ...


2
Shoichi Yamauchi, Hisayoshi Ohshima, Masaki Matsui, Kunihiro Onoda, Tadao Ooka, Akitoshi Yamanaka, Toshifumi Izumi: Semiconductor substrate and method of manufacturing the same. Denso Corporation, Harness Dickey & Pierce, March 18, 2003: US06534380 (205 worldwide citation)

Before a semiconductor substrate and a base substrate is directly bonded to one another, in a protective film removing step, a contamination protective film formed on the semiconductor substrate to protect it from contamination during an ion implanting step is removed. Consequently, even when flatne ...


3
Noriaki Shirai, Katsuhiko Hibino, Takao Nishimura: Obstacle warning system for a vehicle. Denso Corporation, Cushman Darby & Cushman IP Group of Pillsbury Madison & Sutro, May 12, 1998: US05751211 (197 worldwide citation)

As provided here, an obstacle warning system for a vehicle is capable of issuing an alarm accurately according to the curved state of a road. When the road is curved, the system sets the correction time counter on the basis of the following conditions: whether or not the curvature radius of the curv ...


4
Masaaki Ozaki, Koichi Miyashita, Kenji Maekawa, Takahisa Kaneko, Naoki Matsumoto, Kazuhiro Inoguchi: Non-uniformly-rigid barrier wall spacers used to correct problems caused by thermal contraction of smectic liquid crystal material. Denso Corporation, Pillsbury Winthrop L, January 8, 2002: US06337730 (188 worldwide citation)

According to this liquid crystal cell, a vacuum to be established between two electrode substrates as a result of the volume shrinkage of a liquid crystal having a high viscosity at the room temperature can be damped by communicating between two of a plurality of filling portions formed between two ...


5
Masashi Inata, Kahoru Mori, Katsuhiro Suzuki, Akiji Higuchi: Liquid crystal cell and its manufacturing method. Denso Corporation, Toppan Printing, Pillsbury Madison & Sutro, January 19, 1999: US05861932 (177 worldwide citation)

A pair of electrode panels are supported by plural spacer walls made of photo-resist resin to form a cell gap between electrode panels. The cell gap is filled with liquid crystal, preferably, antiferroelectric liquid crystal. The spacer walls are formed on an orientation layer formed on either panel ...


6
Takeshi Miyajima, Norihito Tokura, Kazukuni Hara, Hiroo Fuma: Silicon carbide semiconductor device. Denso Corporation, Pillsbury Madison & Sutro, November 2, 1999: US05976936 (169 worldwide citation)

A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n.sup.+ type silicon carbide semiconductor substrate 1, an n.sup.- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are succe ...


7
Masatoshi Abo, Michima Ogawa, Kunihiro Ishikawa: Information service device having simple data retrieval capabilities. Denso Corporation, Pillsbury Madison & Sutro, September 7, 1999: US05948041 (166 worldwide citation)

When a user selects an item from a menu displayed by a display unit of a vehicular terminal, a control unit of the vehicular terminal receives information data and location data corresponding to the information data from an information center and stores the data inside a database. After receiving pr ...


8
Hisayoshi Ohshima, Masaki Matsui, Kunihiro Onoda, Shoichi Yamauchi: Semiconductor substrate manufacturing method. Denso Corporation, Pillsbury Winthrop, June 26, 2001: US06251754 (156 worldwide citation)

The invention provides a number of semiconductor substrate manufacturing methods with which, in manufacturing a semiconductor substrate having a semiconductor layer in an insulated state on a supporting substrate, it is possible to obtain a thick semiconductor layer with a simple process and cheaply ...


9
Keisaku Hayashi, Hidehiko Akatsuka: Telephone apparatus adaptable to different communication systems. Denso Corporation, Pillsbury Winthrop, March 6, 2001: US06198942 (126 worldwide citation)

In a system having a response hold function as a standard function such as CDMA system, a telephone apparatus transmits a response hold request to a control center when an End key is operated upon arrival of an incoming telephone call from another telephone apparatus. Receiving the response hold req ...


10
Rajesh Kumar, Tsuyoshi Yamamoto, Shoichi Onda, Mitsuhiro Kataoka, Kunihiko Hara, Eiichi Okuno, Jun Kojima: Silicon carbide semiconductor device. Denso Corporation, Harness Dickey & Pierce, June 3, 2003: US06573534 (124 worldwide citation)

A semiconductor device, comprising: a semiconductor substrate comprising silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type; a first semiconductor region formed on the semiconductor substrate and comprising silicon carbide of a second condu ...



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