1
Irfan M Rahim: Circuit structure including a passive element formed within a grid array substrate and method for making the same. Cypress Semiconductor, Kevin L Daffer, Conley Rose & Tayon P C, March 26, 2002: US06362525 (298 worldwide citation)

A circuit structure combines an integrated circuit with a passive circuit element formed within a grid-array substrate. Formation of the circuit structure includes forming a passive circuit element within one or more conductive layers of a grid-array substrate such as may be used for packaging of in ...


2
James E Nulty, Pamela S Trammel: Method of etching an oxide layer. Cypress Semiconductor, Blakely Sokoloff Taylor & Zafman, November 21, 1995: US05468342 (217 worldwide citation)

A method of etching openings in oxide layers is disclosed. A hard mask layer is formed on the oxide layer. The hard mask layer is then patterned by a photoresist layer and an etch is performed to form openings in the hard mask. Next, the patterning layer may be removed and an etch is performed to re ...


3
Ryan T Hirose, Loren T Lancaster: Semiconductor non-volatile memory device having a NAND cell structure. Cypress Semiconductor Corporation, Bradley T Sako, December 19, 2000: US06163048 (211 worldwide citation)

A NAND stack array (95') is placed within a well formed on a semiconductor substrate and includes a series array of memory cell transistors (10) whose threshold voltages can be electrically altered over a range of depletion values. When a cell within a certain NAND stack is selected for a read opera ...


4
Warren Snyder: Configuring digital functions in a digital configurable macro architecture. Cypress Semiconductor Corporation, Wagner Murabito & Hao, August 5, 2003: US06603330 (186 worldwide citation)

A new digital configurable macro architecture is described. The digital configurable macro architecture is well suited for microcontroller or controller designs. In particular, the foundation of the digital configurable macro architecture is a programmable digital circuit block. The programmable dig ...


5
David G Wright, Edward L Grivna, Ronald H Sartore: Apparatus and method for detecting a touch-sensor pad gesture. Cypress Semiconductor Corporation, May 1, 2012: US08169421 (161 worldwide citation)

An apparatus and method for distinguishing a particular gesture from among multiple gestures, performed by a conductive object on the sensing device, using fewer than three time intervals. The apparatus may include a sensing device to detect a presence of a conductive object, and a processing device ...


6
Paul F Beard, Mark D Moore, Drew M Harrington: Digital radiofrequency transceiver. Cypress Semiconductor, Christopher P Maiorana P C, August 13, 2002: US06434187 (157 worldwide citation)

A method for radiofrequency (RF) transmission of digital information includes generating an RF signal using a voltage-controlled oscillator (VCO), stabilizing the RF signal from the VCO by providing an error signal from a phase-locked loop (PLL) to an input of the VCO, and combining the digital info ...


7
David G Wright: Battery with electronic compartment. Cypress Semiconductor Corporation, November 13, 2012: US08310201 (155 worldwide citation)

An electronic containment battery includes a battery section and an electronic section that together form a standard battery form factor that allows insertion into conventional electronic devices. In one example, the electronic section can include Radio Frequency (RF) circuitry that enables electron ...


8
Warren S Snyder, David Van Ess: Capacitance sensor using relaxation oscillators. Cypress Semiconductor Corporation, Blakely Sokoloff Taylor & Zafman, December 11, 2007: US07307485 (139 worldwide citation)

An apparatus that may be used to sense capacitance, as well as other functions. The apparatus includes a comparator circuit with hysteresis, a capacitor, and a current driver. The comparator circuit with hysteresis includes a first input and an output. The capacitor is coupled to the first input of ...


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Fred Jenne, Loren Thomas Lancaster: Semiconductor device having silicon-rich layer and method of manufacturing such a device. Cypress Semiconductor Corporation, Bradley T Sako, March 23, 2004: US06709928 (136 worldwide citation)

A semiconductor device and method of manufacturing a semiconductor device is disclosed in which a SONOS-type dielectric may include a charge storing dielectric (206) that includes at least one charge trapping dielectric layer (212) formed within. A charge trapping dielectric layer (212) may be a sil ...