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Bruce H T Chai, John Joseph Gallagher, David Wayne Hill: Method for making Group III nitride devices and devices produced thereby. Crystal Photonics Incorporated, Allen Dyer Doppelt Milbrath & Gilchrist P A, April 25, 2006: US07033858 (130 worldwide citation)

A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at ...


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Chai Bruce H T, Gallagher John Joseph, Hill David Wayne: Method for making group iii nitride devices and devices produced thereby. Crystal Photonics Incorporated, Chai Bruce H T, Gallagher John Joseph, Hill David Wayne, REGAN Christopher F, September 30, 2004: WO/2004/084275 (24 worldwide citation)

A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at ...


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Herbert Paul Maruska, John Joseph Gallagher, Mitch M C Chou: Wafer produced thereby, and associated methods and devices using the wafer. Crystal Photonics Incorporated, Allen Dyer Doppelt Milbrath & Gilchrist P A, November 18, 2003: US06648966 (17 worldwide citation)

A method for making a free-standing, single crystal, gallium nitride (GaN) wafer includes forming a single crystal GaN layer directly on a single crystal LiAlO


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Bruce Chai: Method of enhancing performance of cerium doped lutetium orthosilicate crystals and crystals produced thereby. Crystal Photonics Incorporated, Allen Dyer Doppelt Milbrath & Gilchrist P A, December 19, 2006: US07151261 (13 worldwide citation)

A method for enhancing the light yield of a single crystal of cerium doped lutetium orthosilicate (LSO) in response to irradiation with high energy radiation includes diffusing oxygen into the crystal by heating the crystal for a period of time in an ambient containing oxygen. This process of therma ...


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Herbert Paul Maruska, John Joseph Gallagher, Mitch M C Chou, David W Hill: Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer. Crystal Photonics Incorporated, Allen Dyer Doppelt Milbrath & Gilchrist P A, January 30, 2007: US07169227 (13 worldwide citation)

A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO2 substrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlO2 substra ...


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Bruce H T Chai, Yangyang Ji: Lutetium yttrium orthosilicate single crystal scintillator detector. Crystal Photonics, Research Foundation of the University of Central Florida, Brian S Steinberger, Law Offices of Brian S Steinberger P A, July 26, 2005: US06921901 (12 worldwide citation)

A single crystal having the general composition, Ce2x(Lu1-yYy)2(1-x)SiO5 where x=approximately 0.00001 to approximately 0.05 and y=approximately 0.0001 to approximately 0.9999; preferably where x ranges from approximately 0.0001 to approximately 0.001 and y ranges from approximately 0.3 to approxima ...


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Bruce Chai: Method of enhancing performance of cerium doped lutetium yttrium orthosilicate crystals and crystals produced thereby. Crystal Photonics Incorporated, Allen Dyer Doppelt Milbrath & Gilchrist P A, January 23, 2007: US07166845 (8 worldwide citation)

A method for enhancing the light yield of a single crystal of cerium doped lutetium yttrium orthosilicate (LYSO) in response to irradiation with high energy radiation includes diffusing oxygen into the crystal by heating the crystal for a period of time in an ambient containing oxygen. This process ...


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Bruce H T Chai, David Y Chai, Randall A Lux: Method of enhancing performance of doped scintillation crystals. Crystal Photonics Incorporated, Allen Dyer Doppelt Milbrath & Gilchrist P A, July 8, 2008: US07397034 (3 worldwide citation)

A method for enhancing the light yield of a doped scintillation crystal may include a reducing step if the crystal includes a dopant, such as cerium in a first oxidation state, such as the 4+ state. The scintillation crystal may include a rare earth silicate. The reducing may include heating in an o ...


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Herbert Paul Maruska, John Joseph Gallagher, Mitch M C Chou, David W Hill: Method for making free-standing AlGaN wafer, wafer produced thereby, and associated methods and devices using the wafer. Crystal Photonics Incorporated, Allen Dyer Doppelt Milbrath & Gilchrist P A, August 18, 2009: US07576372 (2 worldwide citation)

A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO2 substrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlO2 substra ...