1
Eric J Tarsa, Brian Thibeault: High output radial dispersing lamp using a solid state light source. Cree Lighting Company, Koppel & Jacobs, February 26, 2002: US06350041 (372 worldwide citation)

The invention provides a new solid state lamp emitting a light useful for room illumination and other applications. It comprises a solid state Light Source which transmits light through a Separator to a Disperser that disperses the light in a desired pattern and/or changes its color. In one embodime ...


2
Brian Thibeault, Michael Mack, Steven DenBaars: Enhanced light extraction in LEDs through the use of internal and external optical elements. Cree Lighting Company, Koppel Jacobs Patrick & Heybl, December 2, 2003: US06657236 (312 worldwide citation)

This invention describes new LEDs having light extraction structures on or within the LED to increase its efficiency. The new light extraction structures provide surfaces for reflecting, refracting or scattering light into directions that are more favorable for the light to escape into the package. ...


3
Brian Thibeault, Steven DenBaars: Enhanced light extraction through the use of micro-LED arrays. Cree Lighting Company, Koppel Jacobs Patrick & Heybl, June 25, 2002: US06410942 (258 worldwide citation)

This invention describes new LED structures that provide increased light extraction efficiency. The new LED structures include arrays of electrically interconnected micro-LEDs that have and active layer sandwiched between two oppositely doped layer. The micro-LEDs are formed on a first spreader laye ...


4
Yifeng Wu, Naiqing Zhang, Jian Xu, Lee Mc Carthy: Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same. Cree Lighting Company, The Regents of the University of California, Koppel Jacobs Patrick & Heybl, July 1, 2003: US06586781 (217 worldwide citation)

New Group III nitride based field effect transistors and high electron mobility transistors are disclosed that provide enhanced high frequency response characteristics. The preferred transistors are made from GaN/AlGaN and have a dielectric layer on the surface of their conductive channels. The diel ...


5
Eric J Tarsa, Brian Thibeault, James Ibbetson, Michael Mack: Scalable led with improved current spreading structures. Cree Lighting Company, Koppel Jacobs Patrick & Heybl, September 2, 2003: US06614056 (121 worldwide citation)

An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer, improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The ...


6
James Ibbetson, Brian Thibeault: High efficiency light emitters with reduced polarization-induced charges. Cree Lighting Company, Koppel Jacobs Patrick & Heybl, February 4, 2003: US06515313 (94 worldwide citation)

Naturally occurring polarization-induced electric fields in a semiconductor light emitter with crystal layers grown along a polar direction are reduced, canceled or reversed to improve the emitter's operating efficiency and carrier confinement. This is accomplished by reducing differences in th ...


7
David Kapolnek, Brian Thibeault: Fabrication of semiconductor materials and devices with controlled electrical conductivity. Cree Lighting Company, Kopel Jacobs Patrick & Heybl, December 24, 2002: US06498111 (41 worldwide citation)

A method for protecting the surface of a semiconductor material from damage and dopant passivation is described. A barrier layer of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor such as a MOCVD reactor, using the MOCVD source gasses. T ...


8
Peter Kozodoy, Eric J Tarsa: Solar blind photodiode having an active region with a larger bandgap than one or both if its surrounding doped regions. Cree Lighting Company, Koppel & Jacobs, July 24, 2001: US06265727 (18 worldwide citation)

A solar blind p-i-n photodiode where the active i-region has a bandgap larger than the bandgap of one or both of the n-type and p-type regions. The preferred embodiment photodiode is GaN based and Al is added to the regions to obtain the desired bandgap profiles. Al is added to the i-region to obtai ...


9
Parikh Primit, Mishra Umesh, Wu Yifeng: Insulating gate algan/gan hemt. Cree Lighting Company, September 11, 2003: TW552712 (9 worldwide citation)

AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer (20) with a barrier semiconductor l ...


10
Denbaars Steven P, Mack Michael, Thibeault Brian: Light emitting diode with enhanced light extraction, method for growing the same and method for manufacturing the same. Cree Lighting Company, June 1, 2003: TW535300 (2 worldwide citation)

This invention describes new LEDs having light extraction structures (26) on or within the LED to increase its efficiency. The new light extraction structures (26) provide surfaces for reflecting, refracting or scattering light into directions that are more favorable for the light to escape into the ...